MUR305SB - MUR320SB
Taiwan Semiconductor
1 Version:B1702
3A, 50 - 200V Surface Mount Ultrafast Power Rectifier
FEATURES
Glass passivated chip junction
Ideal for automated placement
Ultrafast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Monitor
TV
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Packing code with suffix "G" means green compound
(halogen-free)
Part No. with suffix H means AEC-Q101 qualified
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.11 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
3
A
VRRM
200
V
IFSM
75
A
TJ MAX
175
°C
Package
DO-214AA (SMB)
Configuration
Single Die
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
MUR305SB
MUR310SB
MUR315SB
MUR320SB
UNIT
MUR305SB
MUR310SB
MUR315SB
MUR320SB
VRRM
50
100
150
200
V
VR(RMS)
35
70
105
140
V
IF(AV)
3
A
IFSM
75
A
TJ
- 55 to +175
°C
TSTG
- 55 to +175
°C
DO-214AA (SMB)
MUR305SB - MUR320SB
Taiwan Semiconductor
2 Version:B1702
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-lead thermal resistance
RӨJL
42
°C/W
Junction-to-ambient thermal resistance
RӨJA
76
°C/W
Junction-to-case thermal resistance
RӨJC
45
°C/W
Thermal Performance Note: Units mounted on recommended PCB (10mm x 10mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode (1)
IF = 1.5A, TJ = 25°C
VF
0.79
0.85
V
IF = 3A, TJ = 25°C
0.86
0.90
V
IF = 1.5A, TJ = 150°C
0.61
0.68
V
IF = 3A, TJ = 150°C
0.69
0.73
V
Reverse current @ rated VR per diode (2)
TJ = 25°C
IR
-
5
µA
TJ = 150°C
-
150
µA
Junction capacitance
1 MHz, VR=4.0V
CJ
45
-
pF
Reverse recovery time
IF=0.5A,IR=1.0A
IRR=0.25A
trr
-
25
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
MUR3xxSB
(Note 1, 2)
H
R5
G
SMB
850 / 7" Plastic reel
R4
SMB
3,000 / 13" Paper reel
M4
SMB
3,000 / 13" Plastic reel
Notes:
1. "xx" defines voltage from 50V (MUR305SB) to 200V (MUR320SB)
2. Whole series with green compound (halogen-free)
EXAMPLE
EXAMPLE P/N
PART NO.
PART NO.
SUFFIX
PACKING
CODE
PACKING CODE
SUFFIX
DESCRIPTION
MUR320SBHR5
MUR320SB
H
R5
G
Green compound
AEC-Q101 qualified
MUR305SB - MUR320SB
Taiwan Semiconductor
3 Version:B1702
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
0
1
2
3
4
30 60 90 120 150
AVERAGE FORWARD CURRENT (A)
Resistive or
inductive load
with heat sink
10
100
1000
110 100
CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
0.001
0.010
0.100
1.000
10.000
100.000
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TJ=25°C
TJ=150°C
0.1
1
10
100
0.30 0.50 0.70 0.90 1.10 1.30 1.50
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
Pulse width 300μs
1% duty cycle
TJ=25°C
TJ=150°C
INSTANTANEOUS REVERSE CURRENT (μA)
LEAD TEMPERATURE (°C)
MUR305SB - MUR320SB
Taiwan Semiconductor
4 Version:B1702
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N = Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
DIM
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
1.95
2.20
0.077
0.087
B
4.05
4.60
0.159
0.181
C
3.30
3.95
0.130
0.156
D
1.95
2.65
0.077
0.104
E
0.75
1.60
0.030
0.063
F
5.10
5.60
0.201
0.220
G
0.05
0.20
0.002
0.008
H
0.15
0.31
0.006
0.012
Symbol
Unit (mm)
Unit (inch)
A
2.3
0.091
B
2.5
0.098
C
4.3
0.169
D
1.8
0.071
E
6.8
0.268
MUR305SB - MUR320SB
Taiwan Semiconductor
5 Version:B1702
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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