International Rectifier PD-9.1013 IRF840S HEXFET Power MOSFET Surface Mount @ Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated e Fast Switching Ease of Paralleling e Simple Drive Requirements Voss = 500V Rpsion) = 0.852 Ip = 8.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. SMD-220 Absolute Maximum Ratings Parameter Max. Units Ip @ Te = 25C Continuous Drain Current, Ves @ 10 V 8.0 lop @ Tc =100C | Continuous Drain Current, Vas @ 10 V 6.1 A lpm Pulsed Drain Current 32 Pp @ Tc = 25C | Power Dissipation 125 Ww Pp @ Ta=25C_ | Power Dissipation (PCB Mount)** 3.4 Linear Derating Factor 1.0 WPrC Linear Derating Factor (PCB Mount)** 0.025 Vas Gate-to-Source Voltage +20 v Eas Single Pulse Avalanche Energy @ 510 mJ Jar Avalanche Current 8.0 A Ear Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt_@ 3.5 Vins Ty, Tste Junction and Storage Temperature Range -55 10 +150 C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Rasc Junction-to-Case _ _- 1.0 Reva Junction-to-Ambient (PCB mount)** _ 40 CWW Reva Junction-to-Ambient _- _ 62 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994,IRF840S Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions ViBrypss Drain-to-Source Breakdown Voltage 500 _ V_ | Vas=0V, Ip= 250nA AVerypss/ATy| Breakdown Voltage Temp. Coefficient | 0.78 | | V/C | Reference to 25C, Ib= 1mA Rosion) Static Drain-to-Source On-Resistance _ | 0.85 | Q | Vaes=10V, In=4.8A Vasu) Gate Threshold Voltage 2.0 _ 4.0 V_ | Vps=Ves, lp= 250A Os Forward Transconductance 4.9 _ _ S | Vops=50V, Ip=4.8A loss Drain-to-Source Leakage Current = 25 pA Vos=500V, Ves=0V _ _ 250 Vos=400V, Vas=0V, Ty=125C less Gate-to-Source Forward Leakage _ 100 nA Vas=20V Gate-to-Source Reverse Leakage _ | -100 Ves=-20V Qg Total Gate Charge = = 63 Ip=8.0A Qgs Gate-to-Source Charge | | 9.3} nC | Vps=400V Qoa Gate-to-Drain ("Miller") Charge _ = 32 Vaes=10V See Fig. 6 and 13 te(on) Turn-On Delay Time _ 14 _ Vpp=250V i Rise Time _ 23 _ ns Ip=8.0A tarott Turn-Off Delay Time 49 Re=9.12 tt Fall Time 20 _ Rp=31Q2 See Figure 10 Lo Internal Drain Inductance | 45) Booze) i nH | from package (ee Ls Internal Source Inductance | 75) and center of die contact 8 Ciss Input Capacitance |1300} Ves=0V Coss Output Capacitance 1; 310} PF | Vps= 25V Crss Reverse Transfer Capacitance _ 120 | f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 80 MOSFET symbol 5 (Body Diode) : A showing the Ism Pulsed Source Current _ _ 32 integral reverse @ (Body Diode} p-n junction diode. s Vsp Diode Forward Voltage _ _ 2.0 V_ | Ty=25C, Is=8.0A, Ves=0V tr Reverse Recovery Time | 460 | 970 | ns_ | Ty=25C, Ir=8.0A Qn Reverse Recovery Charge _ 42 | 89 | uC |di/dt=100A/is ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) h Notes: ! Repetitive rating; pulse width limited by max. junction temperature (See Figure 11) Vpp=50V, starting Ty=25C, L=14mH Re=25Q, las=8.0A (See Figure 12) Isps8.0A, di/dts100A/us, Vpp<ViBR)Dss, Tus150C @ Pulse width < 300 us; duty cycle <2%.Ip, Drain Current (Amps) Ip, Drain Current (Amps) 40! 4,5V 40 20us PULSE WIDTH To = 28C 10 to! Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vpg = 50V 20us PULSE WIDTH Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Roscon): Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) to rr IRF840S 20us PULSE WIDTH Tc = 150C Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tc=150C Veg = 10V .0 -60 -40-20 0 20 60 BO 420 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. TemperatureIRF840S #500 = AMHz = Cgg + Cgg, Cgg SHORTED = Cgq 2000 = Cas + Ciss 1500 1000 Capacitance (pF) 500 Vas, Gate-to-Source Voltage (volts) FOR TEST CIRCUIT SEE FIGURE 13 190 10! 415 45 60 Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage Isp, Reverse Drain Current (Amps) Ip, Drain Current (Amps) Tpresdc T y= 150C Ves = OV Ss SE 1007 : . 4. 1. 4 O12 5 4 2 102 5 4022' 5 4 5 404 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltageip, Drain Gurrent (Amps) IRF840S Rp Vos D.U.T. K > Vop Yt 1oVv Pulse Width < tps Duty Factor < 0.1% Lt Fig 10a. Switching Time Test Circuit Vos 90% 25 75 100 1 4 Ves To, Case Temperature (C) ta(on) tr tafort) ty Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 Thermal Response (Z,)c) el | 1. OUTY FACTOR, D=ty/to 2. PEAK T, x +T, 1078 10-4 107 1072 0.4 4 10 108 ty, Rectangular Pulse Duration (seconds) 1073 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF840S Vary tp to obtain Vos > required las 1200, si > > 800 2 i a3] ~ Oo Fig 12a. Unclamped Inductive Test Circuit ge o 2 Dm 400 re i 200 Vos / 0 / 25 50 75 100 125 150 / Starting Ty, Junction Temperature(C) as 77 Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator r ~~ Same Type as D.UT. | | 50KQ. | Qu Q | | " = SUF I tov or ee SSIES SSS ESS | + Ags ++ Qap + Ves Ve ama FL. Charge - Ig * Ip Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Part Marking Information International Appendix D: Tape & Reel Information Rectifier