30E D mm 7929237 0029789 2 mM [ -35-\| SCS-THOMSON IRF 720/Fl-721/Fl SF, MICROELECTRONICS IRF 722/Fl-723/FI _S_6 S-THOMSON ~~ N'- CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS TYPE Voss Rosjon) ID" IRF720 400 V 1.80 3.3A iIRF720Fl 400 V 180 25A IRF721 350 V 180 3.3A {RF721Fl 350 V 1.80 25A (RF722 400 V 2.52 28A IRF722Fi 400 V 2.50 2.0A IRF723 350 V 2.50 2.8A IRF723FI 350 V 2.52 2.0A HIGH VOLTAGE - FOR OFF LINE APPLICATIONS ULTRA FAST SWITCHING TO+220- ISOWATT220 e EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: * ELECTRONIC LAMP BALLAST 0 * DC SWITCH Ae SCHEMATIC N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch- ing times make these POWER MOS transistors ideal for high speed switching applications. Appli- cations include off-line use, constant current source, ultrasonic equipment and switching pow- ers supplies start-up circuits. $ ABSOLUTE MAXIMUM RATINGS IRF . TO-220 720 721 722 723 ISOWATT220 720Fl 721Fl 722Fi 723Fl Vps * Drain-source voltage (Vgg = 0) 400 350 400 350 Vv Voer * Drain-gate voltage (Reg = 20 KQ) 400 350 400 350 V Ves Gate-source voltage +20 Vv lpm (*) Drain current (pulsed) 13 13 11 11 A lbim Drain inductive current, clamped (L= 100 gH) 13 13 11 11 A 720 721 722 723 Ip Drain current (cont.) at T,= 25C 3.3 3.3 2.8 2.8 A Ip Drain current (cont.) at T,= 100C 2.1 2.1 1.8 1.8 A 720Fl 721Fl 722Fl 723Fi IpD Drain current (cont.) at T,= 25C 2.5 2.5. 2 2 A Ip" Drain current (cont.) at T,= 100C 1.5 1.5 1.2 1.2 A TO-220: ISOWATT220 Prot Total dissipation at T, <25C 50 30 Ww . Derating factor 0.40- 0.24 WiC Tstg Storage temperature 55+to-150 C 7; Max. operating junction temperature 150: C * T= 25C to 125C (e) Repetitive Rating: Pulse width limited by max junction temperature. = See note on ISOWATT220 on this datasheet. June 1988 116 307IRF 720/Fl - 721/FL- 722/Fl- 723/Fi_ S$ G S=THOMSON s 30 D Mm 7429237 0029790 9 T~39-11 THERMAL DATA TO-220 | ISOWATT220 Rinj- case Thermal resistance junction-case max 2.50 | 4.16 CWW thes Thermal resistance case-sink typ 0.5 CWW Rinj-amb Thermal resistance junction-ambient max 80 CWW T Maximum lead temperature for soldering purpose 300 C ELECTRICAL CHARACTERISTICS (T,,.,= 25C unless otherwise specified) Parameters Test Conditions Min. | Typ. | Max. | Unit OFF Ver) pss Drain-source Ip= 250 pA Veg= 0 breakdown voltage for [RF720/722/720F1/722Fl 400 Vv for IRF721/723/721F1/723FI 350 Vv lbss Zero gate voltage Vps= Max Rating 250 | pA drain current (Vgg=0) | Vpg= Max Rating x 0.8 T,= 125C 1000) pA lass Gate-body leakage Veg= +20 V +500] nA current (Vpg = 0) ON ** Ves (th) Gate threshold voltage Vps= Ves Ipb= 250 BA 2 4 Vv ID(on) On-state drain current | Vpg> Ip gon) X Rpgion) max Vas = 10 V for IRF720/721/720F1/721FI 3.3 A for IRF722/723/722Fi/723FlI 2.8 A Ros (on) Static drain-source Veg= 10 V Ip= 1.8A on resistance for IRF720/721/720F1/721Fi 1.8 a for IRF722/723/722F1/723FI 2.5 Q DYNAMIC Qj, ** Forward Vps> ID for * Rpg (on) max 1.0 mho transconductance Ip= 1.8 iss Input capacitance 600 | pF oss Output capacitance Vpos= 25 V f= 1 MHz 200 | pF iss Reverse transfer Ves= 0 40 pF capacitance SWITCHING ta(on) Turn-on time Vpp= 175 V Ip= 1.5A 40 | ns t Rise time R,= 502 50 ns tayo) _Turn-off delay time (see test circuit) 100 | ns t Fall time 50 ns Qy Total Gate Charge Veg=10 V Ip= 33A 15 | nc Vps= Max Rating x 0.8 (see test circuit) 2/6 SGS-THOMSON 308 kyz, S&S:THOMSONSG S-THOMSON JOE D _ 7929237 0029791 0 = ELECTRICAL CHARACTERISTICS (Continued) IRF 720/FI - 721/Fl - 722/FI - Fl - 723/F1 T-39-1] Parameters Test Conditions Min. | Typ. | Max. | Unit SOURCE DRAIN DIODE Isp Source-drain current 3.3 A Ispu (*) Source-drain current 13 A (pulsed) Vsp Forward on voltage Isp = 3.3 A Ves= 0 1.6 Vv tr Reverse recovery 450 ns time Q, Reverse recovered Isp= 3.3 A di/dt = 100 Alus 3.4 uC charge ** Pulsed: Pulse duration < 300 ps, duty cycle < 1.5% () Repetitive Rating: Pulse width limited by max junction temperature See note on ISOWATT220 in this datasheet Safe operating areas (standard package) tA) TERFTZ0/1 wees Vosl) Output characteristics Vgg=10V 0 4 a 2 16 Vst) Thermal impedance (standard package) K Output characteristics Q 100 200 Derating curve (standard package) 0 20 40 60 80 100 120 Tease (C) Transfer characteristics 6C-2825, tA) YoslV) 0 1 2 a 4 5 Vosi) 3/6 309$ 6 S- ~ THOMSON .. IRE.720/F] - 721/Fl = 722/F1 - 723/Fl 30E D MM 75929237 0029752 2 Transconductance Static drain-source on resistance e-6578 Rosren iny 5 0 2 4 6 8 10 BA} Gate charge vs gate-source voltage Capacitance variation CipF} 800 600 400 200 3A 16 Qgint) 6 20 49 Vpg(V) Source-drain diode forward characteristics Normalized on resistance vs temperature Roston) (norm) 06 02 ~A0 0 49 80 Ty CC} 4/6 OMSO - a T-39- 11 Maximum drain current vs temperature IgtA) 1RF720,721 IRF722,723 25 50 6 100 125 TC} Normalized breakdown voltage vs temperature GU-ihAT/t {nora} 145 405 09s 08s 075 -49 0 49 80 120 Ty C0 SURGW.ES 310Se SG S-THOMSON pe 72O/FI - 724/61 - 722/F\ ~ 723/F 30E D - eede3s? 0029793 4 Mm * T-39-11 * Clamped inductive test circuit ~ ~ Clamped inductive waverurine VARY t, TO OBTAIN ~ REQUIRED PEAK 4 pyr Vgs=10V Fr Fy=0.5 BV ps5 F=0.75 BVgss SC-0243 SC-0242 Switching times test circuit Gate charge test circuit O Vop ADJUST R, PULSE R j TO OBTAIN SENERATOR SPECIFIED lp SC~0246 CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR . SC-0244 - 516 7, SES THOMSON 311 a TL aaa aaaIRE 720/Fl - 721/Fl - 722/F1_- 723/Fl 30E D Mm 79e29e37 0027794 & ISOWATT220 PACKAGE CHARACTERISTICS AND APPLICATION. ISOWATT220 is fully isolated to 2000V de. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan- ces between the pins and heatsink. The ISOWATT220 package eliminates the need for ex- ternal isolation so reducing fixing hardware. Accu- rate moulding techniques used in manufacture assure consistent heat spreader-to-heatsink capa- citance. ISOWATT220 thermal performance is better than that of the standard part, mounted with a 0.1mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT220 packages is determined by: T) - Te Rit from this Ipmax for the POWER MOS can be cal- culated: Pp lDmaxS R DS(on) (at 150C) ISOWATT DATA Safe operating areas 6/6 312 Thermal impedance S G S=-THOMSON T-39-11 THERMAL IMPEDANtrc ur ISOWATT220 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT220 package. The total thermal resistance Rip (oy is the sum of each of these elements. The transient thermal impedance, Z,, for different pulse durations can be estimated as follows: 1 - for a short duration power pulse less than 1ms; Ztn< Penu-c 2 - for an intermediate power pulse of 5ms to 50ms: Zin= Rinsc 3 - for long power pulses of the order of 500ms or greater: Zin= Rinse + Rinco-s + Pints-amb it is often possibile to discern these areas on tran- sient thermal impedance curves. Fig. 1 Rens-c Renc-Hs Rens-amb VAAN A Derating curve 75 loo 125 TeaealC