SIWB(A)L)/LIB @ tts OUTLINE DIMENSIONS 600V 1A BM tKX RATINGS | 10, 5MAX ty O08 t Ay + + tI. af) -S1wB 2 agen 9 20 B | Type No. ai I ke A A) a io Class ~ Gey haces Dat cd: . ate code : 5 1.6MAX : Hf Qo | et ieyh | 7.6 : 18g XTRARBH Absolute Maximum Ratings Hs iF | ae S1WB(A)() Item Symbol) Conditions 20 | 60 ORF RE oT Storage Temperature Tstg 40: 150 SWE EA : Operating Junction Temperature Tj : 36 6 : _. C tA Ba ee ae aan Maximum Reverse Voltage VRM 600 eed Vv HA weit jo | SOHZ ESR, HEEAR, Ta=25C 1 A Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25C ASR YM Iesm | DOHZIEs&IR, JRBR IE L 14 7 tA BE, T]=25C 30 50 A Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C E oe eink 2 Fen Pt | lmsSt<l0ms To=25C 4.5 16 Als urrent Squared Time MERAY - SAREE Electrical Characteristics (T!=25C) Ns _ 2SL ARNE, 1 F240 CAUSE MAX Forward Voltage Vr | IrF=0.5A, Pulse measurement, Rating of per diode 4,0 Vv 5 EE _ ASU ARE, 1 B44 ORS MAX - Reverse Current Ir VR=VRM, Pulse measurement, Rating of per diode _ 20 HA 31 EAR: U0 - F MAX 19 SATE } Between junction and lead C/W Thermal Resistance Bia HAH - AAR MAX 65 Between junction and ambientll BH CHARACTERISTIC DIAGRAMS MAD eve te Forward Voltage Ti=150C (TYP) WR Ir (A) pulse test | per one diode NRGBRIE Ve lV} BARA BR Power Dissipation roe sine wave T)= 150C BNA Plw) ih 7) hie To[A) 1 tATAY TIA BI (SIWB(A)CIAD) Surge Forward Current Capability (S1WB(A)C]) sine wave a '10ms 10ms: leycle [nomcsepetitive) T)=25C ATA VRE Irsm[A) WRK (cycle) ATAU IR RE (SIWB(A)CIBRD) Surge Forward Current Capability (S1WB(A)(1B) 60 sine wave '10ms 10ms' 40 leycle non~repetitive | [aonyene | 30 ATA 7 RH Irsm(A) 3878 7H (cycle) FIb--F1+FGH-FTalo Derating Curve Talo 12 ee a ee on glass-epoxi substrate . J gp | N 4 FUVbI~RAE 3mms- 08 MS soldering land 3mm 4 Ss \ {sine wave g [Peed ry 32 06 free in air) | e rl R = 04 ~ 0.2 % 10 80 120 160 Ja Pak HE Ta CC)