Document No. DOC-73010-2 | UltraCMOS® RFIC Solutions
Page 4 of 16
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PE42520
Product Specification
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
Latch-up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Table 5. Control Logic Truth Table
Logic Select (LS)
The Logic Select feature is used to determine the
definition for the CTRL pin.
Switching Frequency
The PE42520 has a maximum 25 kHz switching
rate when the internal negative voltage generator
is used (pin 13 = GND). The rate at which the
PE42520 can be switched is only limited to the
switching time (Table 1) if an external negative
supply is provided (pin 13 = VSS_EXT).
Switching frequency describes the time duration
between switching events. Switching time is the
time duration between the point the control signal
reaches 50% of the final value and the point the
output signal reaches within 10% or 90% of its
target value.
LS CTRL RFC–RF1 RFC–RF2
0 0 off on
0 1 on off
1 0 on off
1 1 off on
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE42520 in the 16-lead 3 × 3 mm QFN package
is MSL3.
Optional External Vss Control (VSS_EXT )
For proper operation, the VSS_EXT control pin must
be grounded or tied to the VSS voltage specified in
Table 3. When the VSS_EXT control pin is
grounded, FETs in the switch are biased with an
internal negative voltage generator. For
applications that require the lowest possible spur
performance, VSS_EXT can be applied externally to
bypass the internal negative voltage generator.
Spurious Performance
The typical spurious performance of the PE42520
is –152 dBm when VSS_EXT = 0V (pin 13 = GND). If
further improvement is desired, the internal
negative voltage generator can be disabled by
setting VSS_EXT = –3.4V.
Table 4. Absolute Maximum Ratings
Parameter/Condition Symbol Min Max Unit
Supply voltage VDD –0.3 5.5 V
Digital input voltage (CTRL) VCTRL –0.3 3.6 V
LS input voltage VLS –0.3 3.6 V
RF input power, CW
(RFC–RFX)1
9 kHz ≤ 10 MHz
10 MHz ≤ 8 GHz
8 GHz ≤ 13 GHz
PIN_CW
Fig. 4
36
Fig. 5
dBm
dBm
dBm
RF input power, pulsed
(RFC–RFX)2
9 kHz ≤ 10 MHz
10 MHz ≤ 13 GHz
PIN_PULSED
Fig. 4
Fig. 5
dBm
dBm
RF input power into terminated
ports, CW (RFX)1
9 kHz ≤ 10 MHz
10 MHz ≤ 13 GHz
PIN_TERM
Fig. 4
26
dBm
dBm
Maximum junction temperature TJ_MAX +150 °C
Storage temperature range TST –65 +150 °C
ESD voltage HBM3
RF pins to GND
All pins
VESD_HBM
4000
2500
V
V
ESD voltage MM4, all pins VESD_MM 200 V
ESD voltage CDM5, all pins VESD_CDM 1000 V
Notes: 1. 100% duty cycle, all bands, 50Ω.
2. Pulsed, 5% duty cycle of 4620 µs period, 50Ω.
3. Human Body Model (MIL-STD 883 Method 3015).
4. Machine Model (JEDEC JESD22-A115).
5. Charged Device Model (JEDEC JESD22-C101).
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.