1. General description
The 74HC165; 74HCT165 are high-speed Si-gate CMOS devices that comply with
JEDEC standard no. 7A. They are pin compatible with Low-power Schottky TTL (LSTTL).
The 74HC165; 74HCT165 are 8-bit parallel-load or serial-in shift registers with
complementary serial outputs (Q7 and Q7) available from the last stage. When the
parallel load (PL) input is LOW, parallel data from the D0 to D7 inputs are loaded into the
register asynchronously.
When PL is HIGH, data enters the register serially at the DS input and shifts one place to
the right (Q0 Q1 Q2, etc.) with each positive-going clock transition. This feature
allows parallel-to-serial converter expansion by tying the Q7 output to the DS input of the
succeeding stage.
The clock input is a gated-OR structure which allows one input to be used as an active
LOW clock enable (CE) input. The pin assignment for the CP and CE inputs is arbitrary
and can be reversed for layout convenience. The LOW-to-HIGH transition of input CE
should only take place while CP HIGH for predictable operation. Either the CP or the CE
should be HIGH before the LOW-to-HIGH transition of PL to prevent shifting the data
when PL is activated.
2. Features
nAsynchronous 8-bit parallel load
nSynchronous serial input
nComplies with JEDEC standard no. 7A
nESD protection:
uHBM JESD22-A114E exceeds 2000 V
uMM JESD22-A115-A exceeds 200 V
nSpecified from 40 °Cto+85°C and from 40 °C to +125 °C
3. Applications
nParallel-to-serial data conversion
74HC165; 74HCT165
8-bit parallel-in/serial out shift register
Rev. 03 — 14 March 2008 Product data sheet
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 2 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
4. Ordering information
5. Functional diagram
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74HC165N 40 °C to +125 °C DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4
74HCT165N
74HC165D 40 °C to +125 °C SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
74HCT165D
74HC165DB 40 °C to +125 °C SSOP16 plastic shrink small outline package; 16 leads; body width
5.3 mm SOT338-1
74HCT165DB
74HC165PW 40 °C to +125 °C TSSOP16 plastic thin shrink small outline package; 16 leads; body
width 4.4 mm SOT403-1
74HCT165PW
74HC165BQ 40 °C to +125 °C DHVQFN16 plastic dual in-line compatible thermal enhanced very thin
quad flat package; no leads; 16 terminals; body
2.5 ×3.5 ×0.85 mm
SOT763-1
74HCT165BQ
Fig 1. Logic symbol Fig 2. IEC logic symbol
mna985
D0
D1
D2
D3
D4
D5
D6
D7
CP CE
DS
Q7
Q7
10
15
2
7
9
6
PL
1
5
4
3
14
13
12
11
mna986
59
10
11
12
13
14
3
4
67
2
15
1
11C3/
C2[LOAD]
G1[SHIFT]
3D
2D
2D
SRG8
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 3 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
6. Pinning information
6.1 Pinning
Fig 3. Functional diagram
mna992
8-BIT SHIFT REGISTER
PARALLEL-IN/SERIAL-OUT
9
7
PL
11
1
DS
10
CP
2Q7
D0 D1 D2 D3 D4 D5 D6 D7
Q7
12 13 14 3 4 5 6
CE
15
(1) The die substrate is attached to this pad using
conductive die attach material. It can not be used as
supply pin or input.
Fig 4. Pin configuration (DIP16, SO16
and (T)SSOP16) Fig 5. Pin configuration (DHVQFN16)
74HC165
74HCT165
PL VCC
CP CE
D4 D3
D5 D2
D6 D1
D7 D0
Q7 DS
GND Q7
001aah564
1
2
3
4
5
6
7
8
10
9
12
11
14
13
16
15
001aah565
74HC165
74HCT165
Q7 DS
GND(1)
D7 D0
D6 D1
D5 D2
D4 D3
CP CE
GND
Q7
PL
VCC
Transparent top view
7 10
6 11
5 12
4 13
3 14
2 15
8
9
1
16
terminal 1
index area
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 4 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
6.2 Pin description
7. Functional description
[1] H = HIGH voltage level;
h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition;
L = LOW voltage level;
l = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition;
q = state of the referenced output one set-up time prior to the LOW-to-HIGH clock transition;
X = don’t care;
= LOW-to-HIGH clock transition.
Table 2. Pin description
Symbol Pin Description
PL 1 asynchronous parallel load input (active LOW)
CP 2 clock input (LOW-to-HIGH edge-triggered)
Q7 7 complementary output from the last stage
GND 8 ground (0 V)
Q7 9 serial output from the last stage
DS 10 serial data input
D0 to D7 11, 12, 13, 14, 3, 4, 5, 6 parallel data inputs (also referred to as Dn)
CE 15 clock enable input (active LOW)
VCC 16 positive supply voltage
Table 3. Function table[1]
Operating modes Inputs Qn registers Outputs
PL CE CP DS D0 to D7 Q0 Q1 to Q6 Q7 Q7
parallel load L XXXLLL to LLH
LXXXHHH to HHL
serial shift H L l X L q0 to q5 q6 q6
HLh X H q0 to q5 q6 q6
HL l X L q0 to q5 q6 q6
HL h X H q0 to q5 q6 q6
hold “do nothing” H H X X X q0 q1 to q6 q7 q7
H X H X X q0 q1 to q6 q7 q7
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 5 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
8. Limiting values
Fig 6. Timing diagram
CE
CP
DS
PL
D0
D1
D2
D3
D4
D5
D6
D7
Q7
Q7
mna993
inhibit serial shift
load
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions Min Max Unit
VCC supply voltage 0.5 +7 V
IIK input clamping current VI < 0.5 V or VI>V
CC + 0.5 V [1] -±20 mA
IOK output clamping current VO < 0.5 V or VO>V
CC + 0.5 V [1] -±20 mA
IOoutput current 0.5 V < VO< VCC + 0.5 V - ±25 mA
ICC supply current - 50 mA
IGND ground current 50 - mA
Tstg storage temperature 65 +150 °C
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 6 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] Ptot derates linearly with 12 mW/K above 70 °C.
[3] Ptot derates linearly with 8 mW/K above 70 °C.
[4] Ptot derates linearly with 5.5 mW/K above 60 °C.
[5] Ptot derates linearly with 4.5 mW/K above 60 °C.
9. Recommended operating conditions
10. Static characteristics
Ptot total power dissipation Tamb = 40 °C to +125 °C
DIP16 package [2] - 750 mW
SO16 package [3] - 500 mW
(T)SSOP16 package [4] - 500 mW
DHVQFN16 package [5] - 500 mW
Table 4. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions Min Max Unit
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions 74HC165 74HCT165 Unit
Min Typ Max Min Typ Max
VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
VIinput voltage 0 - VCC 0-V
CC V
VOoutput voltage 0 - VCC 0-V
CC V
Tamb ambient temperature 40 - +125 40 - +125 °C
t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V
VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V
VCC = 6.0 V - - 83 - - - ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C40 °C to +85 °C40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
74HC165
VIH HIGH-level
input voltage VCC = 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
VCC = 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
VIL LOW-level
input voltage VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 7 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
VOH HIGH-level
output voltage VI = VIH or VIL
IO = 20 µA; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
IO = 20 µA; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
IO = 20 µA; VCC = 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
IO = 4.0 mA; VCC = 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
IO = 5.2 mA; VCC = 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
VOL LOW-level
output voltage VI = VIH or VIL
IO = 20 µA; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V
IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V
IO = 20 µA; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V
IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
IIinput leakage
current VI = VCC or GND;
VCC = 6.0 V --±0.1 - ±1-±1µA
ICC supply current VI = VCC or GND; IO=0A;
VCC = 6.0 V - - 8.0 - 80 - 160 µA
CIinput
capacitance - 3.5 - - - - - pF
74HCT165
VIH HIGH-level
input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
VIL LOW-level
input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
VOH HIGH-level
output voltage VI = VIH or VIL; VCC = 4.5 V
IO = 20 µA 4.4 4.5 - 4.4 - 4.4 - V
IO = 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V
VOL LOW-level
output voltage VI = VIH or VIL; VCC = 4.5 V
IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V
IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
IIinput leakage
current VI = VCC or GND;
VCC = 6.0 V --±0.1 - ±1-±1µA
ICC supply current VI = VCC or GND; IO=0A;
VCC = 6.0 V - - 8.0 - 80 - 160 µA
ICC additional
supply current per input pin;
VI=V
CC 2.1 V;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
Dn and DS inputs - 35 126 - 157.5 - 171.5 µA
CP CE, and PL inputs - 65 234 - 292.5 - 318.5 µA
CIinput
capacitance - 3.5 - - - - - pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C40 °C to +85 °C40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 8 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
11. Dynamic characteristics
Table 7. Dynamic characteristics
GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit, see Figure 12
Symbol Parameter Conditions 25 °C40 °C to +85 °C40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
74HC165
tpd propagation
delay CP or CE to Q7, Q7;
see Figure 7 [1]
VCC = 2.0 V - 52 165 - 205 - 250 ns
VCC = 4.5 V - 19 33 - 41 - 50 ns
VCC = 6.0 V - 15 28 - 35 - 43 ns
VCC = 5.0 V; CL=15pF - 16 - - - - - ns
PL to Q7, Q7; see Figure 8
VCC = 2.0 V - 50 165 - 205 - 250 ns
VCC = 4.5 V - 18 33 - 41 - 50 ns
VCC = 6.0 V - 14 28 - 35 - 43 ns
VCC = 5.0 V; CL=15pF - 15 - - - - - ns
D7 to Q7, Q7; see Figure 9
VCC = 2.0 V - 36 120 - 150 - 180 ns
VCC = 4.5 V - 13 24 - 30 - 36 ns
VCC = 6.0 V - 10 20 - 26 - 31 ns
VCC = 5.0 V; CL=15pF - 11 - - - - - ns
tttransition
time Q7, Q7 output; see Figure 7 [2]
VCC = 2.0 V - 19 75 - 95 - 110 ns
VCC = 4.5 V - 7 15 - 19 - 22 ns
VCC = 6.0 V - 6 13 - 16 - 19 ns
tWpulse width CP input HIGH or LOW;
see Figure 7
VCC = 2.0 V 80 17 - 100 - 120 - ns
VCC = 4.5 V 16 6 - 20 - 24 - ns
VCC = 6.0 V 14 5 - 17 - 20 - ns
PL input LOW; see Figure 8
VCC = 2.0 V 80 14 - 100 - 120 - ns
VCC = 4.5 V 16 5 - 20 - 24 - ns
VCC = 6.0 V 14 4 - 17 - 20 - ns
trec recovery time PL to CP, CE; see Figure 8
VCC = 2.0 V 100 22 - 125 - 150 - ns
VCC = 4.5 V 20 8 - 25 - 30 - ns
VCC = 6.0 V 17 6 - 21 - 26 - ns
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 9 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
tsu set-up time DS to CP, CE; see Figure 10
VCC = 2.0 V 80 11 - 100 - 120 - ns
VCC = 4.5 V 16 4 - 20 - 24 - ns
VCC = 6.0 V 14 3 - 17 - 20 - ns
CE to CP and CP to CE;
see Figure 10
VCC = 2.0 V 80 17 - 100 - 120 - ns
VCC = 4.5 V 16 6 - 20 - 24 - ns
VCC = 6.0 V 14 5 - 17 - 20 - ns
Dn to PL; see Figure 11
VCC = 2.0 V 80 22 - 100 - 120 - ns
VCC = 4.5 V 16 8 - 20 - 24 - ns
VCC = 6.0 V 14 6 - 17 - 20 - ns
thhold time DS to CP, CE and Dn to PL;
see Figure 10
VCC = 2.0 V 5 6 - 5 - 5 - ns
VCC = 4.5 V 5 2 - 5 - 5 - ns
VCC = 6.0 V 5 2 - 5 - 5 - ns
CE to CP and CP to CE;
see Figure 10
VCC = 2.0 V 5 17 - 5 - 5 - ns
VCC = 4.5 V 5 6- 5 - 5 - ns
VCC = 6.0 V 5 5- 5 - 5 - ns
fmax maximum
frequency CP input; see Figure 7
VCC = 2.0 V 6 17 - 5 - 4 - MHz
VCC = 4.5 V 30 51 - 24 - 20 - MHz
VCC = 6.0 V 35 61 - 28 - 24 - MHz
VCC = 5.0 V; CL= 15 pF - 56 - - - - - MHz
CPD power
dissipation
capacitance
per package;
VI= GND to VCC
[3] -35- - - - - pF
Table 7. Dynamic characteristics
…continued
GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit, see Figure 12
Symbol Parameter Conditions 25 °C40 °C to +85 °C40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 10 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
74HCT165
tpd propagation
delay CE, CP to Q7, Q7;
see Figure 7 [1]
VCC = 4.5 V - 17 34 - 43 - 51 ns
VCC = 5.0 V; CL=15pF - 14 - - - - - ns
PL to Q7, Q7; see Figure 8
VCC = 4.5 V - 20 40 - 50 - 60 ns
VCC = 5.0 V; CL=15pF - 17 - - - - - ns
D7 to Q7, Q7; see Figure 9
VCC = 4.5 V - 14 28 - 35 - 42 ns
VCC = 5.0 V; CL=15pF - 11 - - - - - ns
tttransition
time Q7, Q7 output; see Figure 7 [2]
VCC = 4.5 V - 7 15 - 19 - 22 ns
tWpulse width CP input; see Figure 7
VCC = 4.5 V 16 6 - 20 - 24 - ns
PL input; see Figure 8
VCC = 4.5 V 20 9 - 25 - 30 - ns
trec recovery time PL to CP, CE; see Figure 8
VCC = 4.5 V 20 8 - 25 - 30 - ns
tsu set-up time DS to CP, CE; see Figure 10
VCC = 4.5 V 20 2 - 25 - 30 - ns
CE to CP and CP to CE;
see Figure 10
VCC = 4.5 V 20 7 - 25 - 30 - ns
Dn to PL; see Figure 11
VCC = 4.5 V 20 10 - 25 - 30 - ns
thhold time DS to CP, CE and Dn to PL;
see Figure 10
VCC = 4.5 V 7 1 - 9 - 11 - ns
CE to CP and CP to CE;
see Figure 10
VCC = 4.5 V 0 7- 0 - 0 - ns
fmax maximum
frequency CP input; see Figure 7
VCC = 4.5 V 26 44 - 21 - 17 - MHz
VCC = 5.0 V; CL= 15 pF - 48 - - - - - MHz
Table 7. Dynamic characteristics
…continued
GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit, see Figure 12
Symbol Parameter Conditions 25 °C40 °C to +85 °C40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 11 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2× fi + Σ (CL× VCC2× fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
Σ (CL× VCC2× fo) = sum of outputs;
CL = output load capacitance in pF;
VCC = supply voltage in V.
12. Waveforms
CPD power
dissipation
capacitance
per package;
VI= GND to VCC 1.5 V [3] -35- - - - - pF
Table 7. Dynamic characteristics
…continued
GND (ground = 0 V); C
L
= 50 pF unless otherwise specified; for test circuit, see Figure 12
Symbol Parameter Conditions 25 °C40 °C to +85 °C40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Measurement points are given in Table 8.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 7. The clock (CP) or clock enable (CE) to output (Q7 or Q7) propagation delays, the clock pulse width, the
maximum clock frequency and the output transition times
mna987
CP or CE input
Q7 or Q7 output
tPHL
tTHL tTLH
tPLH
tW
1/fmax
VM
VOH
VI
GND
VOL
VM
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 12 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
Measurement points are given in Table 8.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 8. The parallel load (PL) pulse width, the parallel load to output (Q7 or Q7) propagation delays, the parallel
load to clock (CP) and clock enable (CE) recovery time
mna988
PL input
CE, CP input
Q7 or Q7 output
tPHL
tWtrec
VM
VOH
VI
GND
VI
GND
VOL
VM
VM
Measurement points are given in Table 8.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 9. The data input (D7) to output (Q7 or Q7) propagation delays when PL is LOW
mna989
D7 input
Q7 output
Q7 output
tPHL
tPHL
VM
VOH
VI
GND
VOH
VOL
VOL
VM
tPLH
tPLH
VM
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 13 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
The shaded areas indicate when the input is permitted to change for predictable output performance
Measurement points are given in Table 8.
VOL and VOH are typical voltage output levels that occur with the output load.
(1) CE may change only from HIGH-to-LOW while CP is LOW, see Section 1.
Fig 10. The set-up and hold times from the serial data input (DS) to the clock (CP) and clock enable (CE) inputs,
from the clock enable input (CE) to the clock input (CP) and from the clock input (CP) to the
clock enable input (CE)
th
tsu tsu
th
tW
VM
VM
GND
VI
GND
VI
DS input
tsu
VM
mna990
GND
VI
CP, CE input
CP, CE input
(1)
Measurement points are given in Table 8.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 11. The set-up and hold times from the data inputs (Dn) to the parallel load input (PL)
mna991
Dn input
PL input
tsu th
VI
GND
VI
GND
VM
VM
tsu th
VM
VM
Table 8. Measurement points
Type Input Output
VIVMVM
74HC165 VCC 0.5VCC 0.5VCC
74HCT165 3 V 1.3 V 1.3 V
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 14 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
Test data is given in Table 9.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch
Fig 12. Test circuit for measuring switching times
VMVM
tW
tW
10 %
90 %
0 V
VI
VI
negative
pulse
positive
pulse
0 V
VMVM
90 %
10 %
tf
tr
tr
tf
001aad983
DUT
VCC VCC
VIVO
RT
RLS1
CL
open
G
Table 9. Test data
Type Input Load S1 position
VItr, tfCLRLtPHL, tPLH
74HC165 VCC 6 ns 15 pF, 50 pF 1 kopen
74HCT165 3 V 6 ns 15 pF, 50 pF 1 kopen
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 15 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
13. Package outline
Fig 13. Package outline SOT38-4 (DIP16)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT38-4 95-01-14
03-02-13
MH
c
(e )
1
ME
A
L
seating plane
A1
wM
b1
b2
e
D
A2
Z
16
1
9
8
E
pin 1 index
b
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
UNIT A
max. 12 b1(1) (1) (1)
b2cD E e M Z
H
L
mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
min. A
max. bmax.
w
ME
e1
1.73
1.30 0.53
0.38 0.36
0.23 19.50
18.55 6.48
6.20 3.60
3.05 0.2542.54 7.62 8.25
7.80 10.0
8.3 0.764.2 0.51 3.2
inches 0.068
0.051 0.021
0.015 0.014
0.009
1.25
0.85
0.049
0.033 0.77
0.73 0.26
0.24 0.14
0.12 0.010.1 0.3 0.32
0.31 0.39
0.33 0.030.17 0.02 0.13
DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 16 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
Fig 14. Package outline SOT109-1 (SO16)
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
8
9
1
16
y
pin 1 index
UNIT A
max. A1A2A3bpcD
(1) E(1) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10 1.45
1.25 0.25 0.49
0.36 0.25
0.19 10.0
9.8 4.0
3.8 1.27 6.2
5.8 0.7
0.6 0.7
0.3 8
0
o
o
0.25 0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
1.0
0.4
SOT109-1 99-12-27
03-02-19
076E07 MS-012
0.069 0.010
0.004 0.057
0.049 0.01 0.019
0.014 0.0100
0.0075 0.39
0.38 0.16
0.15 0.05
1.05
0.041
0.244
0.228 0.028
0.020 0.028
0.012
0.01
0.25
0.01 0.004
0.039
0.016
0 2.5 5 mm
scale
SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 17 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
Fig 15. Package outline SOT338-1 (SSOP16)
UNIT A1A2A3bpcD
(1) E(1) eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.21
0.05 1.80
1.65 0.25 0.38
0.25 0.20
0.09 6.4
6.0 5.4
5.2 0.65 1.25
7.9
7.6 1.03
0.63 0.9
0.7 1.00
0.55 8
0
o
o
0.130.2 0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT338-1 99-12-27
03-02-19
(1)
wM
bp
D
HE
E
Z
e
c
vMA
X
A
y
18
16 9
θ
A
A1
A2
Lp
Q
detail X
L
(A )
3
MO-150
pin 1 index
0 2.5 5 mm
scale
SSOP16: plastic shrink small outline package; 16 leads; body width 5.3 mm SOT338-1
A
max.
2
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 18 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
Fig 16. Package outline SOT403-1 (TSSOP16)
UNIT A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.15
0.05 0.95
0.80 0.30
0.19 0.2
0.1 5.1
4.9 4.5
4.3 0.65 6.6
6.2 0.4
0.3 0.40
0.06 8
0
o
o
0.13 0.10.21
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
0.75
0.50
SOT403-1 MO-153 99-12-27
03-02-18
wM
bp
D
Z
e
0.25
18
16 9
θ
A
A1
A2
Lp
Q
detail X
L
(A )
3
HE
E
c
vMA
X
A
y
0 2.5 5 mm
scale
TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1
A
max.
1.1
pin 1 index
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 19 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
Fig 17. Package outline SOT763-1 (DHVQFN16)
terminal 1
index area
0.51
A1Eh
b
UNIT ye
0.2
c
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 3.6
3.4
Dh
2.15
1.85
y1
2.6
2.4 1.15
0.85
e1
2.5
0.30
0.18
0.05
0.00 0.05 0.1
DIMENSIONS (mm are the original dimensions)
SOT763-1 MO-241 - - -- - -
0.5
0.3
L
0.1
v
0.05
w
0 2.5 5 mm
scale
SOT763-1
DHVQFN16: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
16 terminals; body 2.5 x 3.5 x 0.85 mm
A(1)
max.
AA1c
detail X
y
y1C
e
L
Eh
Dh
e
e1
b
27
15 10
9
8
1
16
X
D
E
C
BA
terminal 1
index area
AC
CB
vM
wM
E(1)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
D(1)
02-10-17
03-01-27
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 20 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
14. Abbreviations
15. Revision history
Table 10. Abbreviations
Acronym Description
CMOS Complementary Metal-Oxide Semiconductor
DUT Device Under Test
ESD ElectroStatic Discharge
HBM Human Body Model
MM Machine Model
TTL Transistor-Transistor Logic
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
74HC_HCT165_3 20080314 Product data sheet - 74HC_HCT165_CNV_2
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package SOT763-1 (DHVQFN16) added to Section 4 “Ordering information” and Section
13 “Package outline”.
Family data added, see Section 10 “Static characteristics”
74HC_HCT165_CNV_2 December 1990 Product specification - -
74HC_HCT165_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 14 March 2008 21 of 22
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
16. Legal information
16.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors 74HC165; 74HCT165
8-bit parallel-in/serial out shift register
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 March 2008
Document identifier: 74HC_HCT165_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
18. Contents
1 General description. . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Functional description . . . . . . . . . . . . . . . . . . . 4
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Recommended operating conditions. . . . . . . . 6
10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 20
15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20
16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 21
16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21
16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
17 Contact information. . . . . . . . . . . . . . . . . . . . . 21
18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22