2N7000 SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol RDS(on) (Max 5 )@VGS=10V { RDS(on) (Max 5.3 )@VGS=4.5V 3. Drain Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150C) 2. Gate { { General Description 1. Source TO-92 This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. 1 2 3 Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain to Source Voltage 60 V Continuous Drain Current(@TA = 25C) 200 mA 500 mA IDM Drain Current Pulsed VGS Gate to Source Voltage 20 V Total Power Dissipation Single Operation (TA=25C) 0.4 W Total Power Dissipation Single Operation (TA=70C) 3.2 mW - 55 ~ 150 C 300 C PD TSTG, TJ TL (Note 1) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 10 seconds. Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Value Min. Typ. Max. - - 312.5 January, 2003. Rev. 0. Units C/W 1/6 Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved. 2N7000 Electrical Characteristics Symbol ( TJ = 25 C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units 60 - - V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS/ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 C - 48 - mV/C IDSS Drain-Source Leakage Current VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125 C - - 1 1000 uA Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA IGSS On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 2.5 V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 500mA VGS = 4.5 V, ID = 75mA - 1.55 1.9 5 5.3 Dynamic Characteristics Ciss Input Capacitance - 20 25 Coss Output Capacitance - 11 14 Crss Reverse Transfer Capacitance - 3 4 - 4 18 - 2.5 15 - 17 44 VGS =0 V, VDS =25V, f = 1MHz pF Dynamic Characteristics td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time VDD =30V, ID =200mA, RG =50 VGS = 10 V (Note 2,3) Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) VDS =30V, VGS =4.5V, ID =200mA (Note 2,3) ns - 7 24 - 0.5 0.65 - 0.15 - - 0.2 - Min. Typ. Max. Unit. - - 200 mA - - 1.2 V nC Source-Drain Diode Ratings and Characteristics Symbol IS VSD Parameter Test Conditions Maximum Continuous Diode Forward Current Diode Forward Voltage IS =200mA, VGS =0V NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width 300us, Duty Cycle 2% 3. Essentially independent of operating temperature. 2/6 (Note 2) 2N7000 Fig 2. Transfer Characteristics Fig 1. On-State Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 0 10 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : o 150 C o Notes : 1. 250 s Pulse Test 2. TC = 25 -55 C o 25 C Notes : 1. VDS = 10V 2. 250 s Pulse Test -1 0 10 1 10 0 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 2.5 IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [m ] 3.0 VGS = 4.5V VGS = 10V 2.0 1.5 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 1.0 0.0 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0.2 0.4 ID, Drain Current [A] 0.8 1.0 1.2 1.4 Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics 50 12 VGS, Gate-Source Voltage [V] Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 40 Capacitance [pF] 0.6 VSD, Source-Drain voltage [V] Notes : 1. VGS = 0V 2. f=1MHz 30 Ciss 20 Coss 10 Crss 10 VDS = 30V 8 VDS = 48V 6 4 2 Note : ID = 200 mA 0 0 5 10 15 20 VDS, Drain-Source Voltage [V] 25 30 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 QG, Total Gate Charge [nC] 3/6 2N7000 Fig 8. On-Resistance Variation vs. Junction Temperature Fig 7. Breakdown Voltage Variation vs. Junction Temperature 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 4/6 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 200 2.0 1.5 1.0 0.5 0.0 -100 Notes : 1. VGS = 10 V 2. ID = 500 mA -50 0 50 100 o TJ, Junction Temperature [ C] 150 200 2N7000 Fig. 9. Gate Charge Test Circuit & Waveforms VGS Same Type as DUT 50K Qg 200nF 12V V 4.5V 300nF VDS VGS Qgs Qgd DUT 1mA Charge Fig 10. Switching Time Test Circuit & Waveforms VDS RL VDS 90% VDD ( 0.5 rated V DS ) 10V V Pulse Generator RG DUT Vin 10% tr td(on) t on td(off) tf t off 5/6 2N7000 TO-92 Package Dimension Dim. mm Min. Inch Typ. A Max. Min. 4.2 Typ. 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E F 0.4 4.43 4.83 G 0.016 0.174 0.190 0.45 0.017 H 2.54 0.100 I 2.54 0.100 J 0.33 0.48 0.013 0.019 A E B F C G 1 D 2 3 H 6/6 Max. I 1. Source 2. Gate 3. Drain J