Absolute Maximum Ratings
Symbol Parameter Value Units
VDSS Drain to Source Voltage 60 V
IDContinuous Drain Current(@TA = 25°C) 200 mA
IDM Drain Current Pulsed (Note 1) 500 mA
VGS Gate to Source Voltage ±20 V
PD
Total Power Dissipation Single Operation (TA=25°C) 0.4 W
Total Power Dissipation Single Operation (TA=70°C) 3.2 mW
TSTG, TJOperating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds. 300 °C
Thermal Characteristics
Symbol Parameter Value Units
Min. Typ. Max.
RθJA Thermal Resistance, Junction-to-Ambient - - 312.5 °C/W
2N7000
January, 2003. Rev. 0. 1/6
Features
■RDS(on) (Max 5 Ω)@VGS=10V
RDS(on) (Max 5.3Ω)@VGS=4.5V
■ Gate Charge (Typical 0.5nC)
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
SemiWell Semiconductor
Logic N-Channel MOSFET
Symbol
TO-92
1
3
2
●
●
●
▲
{
{
{
◀
●
●
●
▲
{
{
{
◀
3. Drain
1. Source
2. Gate
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 60 - - V
ΔBVDSS/
ΔTJ
Breakdown Voltage Temperature
coefficient ID = 250uA, referenced to 25 °C -48-mV/°C
IDSS Drain-Source Leakage Current VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C --
1
1000 uA
IGSS
Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA
Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 2.5 V
RDS(ON) Static Drain-Source On-state
Resistance
VGS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA
-
-
1.55
1.9
5
5.3 Ω
Dynamic Characteristics
Ciss Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-2025
pF
Coss Output Capacitance - 11 14
Crss Reverse Transfer Capacitance - 3 4
Dynamic Characteristics
td(on) Turn-on Delay Time
VDD =30V, ID =200mA, RG =50Ω
VGS = 10 V
(Note 2,3)
-418
ns
trRise Time - 2.5 15
td(off) Turn-off Delay Time - 17 44
tfFall Time - 7 24
QgTotal Gate Charge
VDS =30V, VGS =4.5V, ID =200mA
(Note 2,3)
- 0.5 0.65
nC
Qgs Gate-Source Charge - 0.15 -
Qgd Gate-Drain Charge(Miller Charge) - 0.2 -
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit.
ISMaximum Continuous Diode Forward Current - - 200 mA
VSD Diode Forward Voltage IS =200mA, VGS =0V (Note 2) --1.2V
※NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤2%
3. Essentially independent of operating temperature.
2/6
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
150℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1.0
1.5
2.0
2.5
3.0
VGS = 4.5V
VGS = 10V
Note : T※J = 25℃
RDS(ON),
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
0246810
10-1
100
150oC
25oC
-55oC Notes :※
1. VDS = 10V
2. 250µ s Pulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
100101
100
VGS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
Notes :※
1. 250µ s Pulse Test
2. TC = 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
2
4
6
8
10
12
VDS = 30V
VDS = 48V
Note : I※D = 200 mA
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
0 5 10 15 20 25 30
0
10
20
30
40
50
Crss
Coss
Ciss
Notes :※
1. VGS = 0V
2. f=1MHz
Ciss=Cgs+Cgd(Cds=shorted)
Coss =Cds+Cgd
Crss=Cgd
Capacitance [pF]
VDS, Drain-Source Voltage [V]
3/6
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics
2N7000
Fig 1. On-State Characteristics Fig 2. Transfer Characteristics
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :※
1. VGS = 10 V
2. ID = 500 mA
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID = 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
Fig 7. Breakdown Volta ge Variation
vs. Junction Temperature Fig 8. On-Resistance Variation
vs. Junction Temperature
2N7000
4/6
5/6
Fig 10. Switching Time Test Circuit & Waveforms
2N7000
Fig. 9. Gate Charge Test Circuit & Wavefor ms
Vin
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
( 0.5 rated VDS )
10V
VDS
RL
DUT
Pulse
Generator
Vin
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
Vin
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
( 0.5 rated VDS )
V
VDS
RL
DUT
Pulse
Generator
RG
Vin
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
Vin
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
( 0.5 rated VDS )
10V
VDS
RL
DUT
Pulse
Generator
Vin
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
Vin
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
( 0.5 rated VDS )
V
VDS
RL
DUT
Pulse
Generator
RG
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
4.5V
Qg
Qgs Qgd
Charge
VGS
V
Qg
Qgs Qgd
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
4.5V
Qg
Qgs Qgd
Charge
VGS
V
Qg
Qgs Qgd
1mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Dim.
mm Inch
Min. Typ. Max. Min. Typ. Max.
A 4.2 0.165
B 3.7 0.146
C 4.43 4.83 0.174 0.190
D 14.07 14.87 0.554 0.585
E 0.4 0.016
F 4.43 4.83 0.174 0.190
G 0.45 0.017
H2.54 0.100
I2.54 0.100
J 0.33 0.48 0.013 0.019
2N7000
6/6
TO-92 Package Dimension
1. Source
2. Gate
3. Drain
A
B
C
G
E
F
D
HJ
1
2
3
I
