VN0610L, VN10KLS, VN2222L
Vishay Siliconix
Document Number: 70213
S-04279—Rev. F, 16-Jul-01 www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFETs with Zener Gate
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27
VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31
VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23
FEATURES BENEFITS APPLICATIONS
DZener Diode Input Protected
DLow On-Resistance: 3 W
DUltralow Threshold: 1.2 V
DLow Input Capacitance: 38 pF
DLow Input and Output Leakage
DExtra ESD Protection
DLow Offset Voltage
DLow-Voltage Operation
DHigh-Speed, Easily Driven
DLow Error Voltage
DDrivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
DInductive Load Drivers
1
TO-92S
Top View
S
D
G2
3
1
TO-226AA
(TO-92)
Top View
S
D
G2
3
VN10KLSVN0610L
VN2222L
Device Marking
Front View
“S” VN
0610L
xxyy
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
“S” VN
2222L
xxyy
Device Marking
Front View
“S” VN
10KLS
xxyy
“S” = Siliconix Logo
xxyy = Date Code
VN0610L
VN2222L
VN10KLS
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol VN2222L
VN0610L VN10KLS Unit
Drain-Source Voltage VDS 60 60
Gate-Source Voltage VGS 15/–0.3 15/–0.3 V
_TA= 25_C0.27 0.31
Continuous Drain Current (TJ = 150_C) TA= 100_CID0.17 0.20 A
Pulsed Drain CurrentaIDM 1 1.0
TA= 25_C0.8 0.9
Power Dissipation TA= 100_CPD0.32 0.4 W
Thermal Resistance, Junction-to-Ambient RthJA 156 139 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70213
S-04279—Rev. F, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN0610L
VN10KLS VN2222L
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA120 60 60
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.2 0.8 2.5 0.6 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 15 V 1 100 100 nA
VDS = 48 V, VGS = 0 V 10 10
m
Zero Gate Voltage Drain Current IDSS TJ = 125_C500 500 mA
On-State Drain CurrentbID(on) VDS = 10 V, VGS = 10 V 1 0.75 0.75 A
VGS = 5 V, ID = 0.2 A 4 7.5 7.5
Drain-Source On-ResistancebrDS(on) VGS = 10 V, ID = 0.5 A 3 5 7.5 W
TJ = 125_C5.6 9 13.5
Forward T ransconductancebgfs VDS = 10 V, ID = 0.5 A 300 100 100
Common Source Output Conductancebgos VDS = 7.5 V, ID = 0.05 A 0.2 mS
Dynamic
Input Capacitance Ciss 38 60 60
Output Capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 16 25 25 pF
Reverse Transfer Capacitance Crss 2 5 5
Switchingc
T urn-On Time tON VDD = 15 V, RL = 23 W
^
7 10 10
Turn-Off Time tOFF ID ^ 0.6 A, VGEN = 10 V
RG = 25 W9 10 10 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDP06
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
Document Number: 70213
S-04279—Rev. F, 16-Jul-01 www.vishay.com
11-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A) TJ – Junction Temperature (_C)
1.0
012345
0.8
0.6
0.4
0.2
0
6 V
4 V
5 V
2 V
3 V
50
0 0.4 0.8 1.2 1.6 2.0
40
30
20
10
0
1.9 V
1.8 V
1.6 V
1.5 V
1.2 V
1.4 V
0.5
0.4
0.3
001 5
0.2
0.1
234
125_C
TJ = –55_C
5
4
3
00 0.2 1.0
2
1
0.4 0.6 0.8
2.25
2.00
1.75
0.50 –50 –10 150
1.50
1.25
30 70 110
1.00
0.75
0.1 A
7
0 4 8 12 16 20
6
5
4
0
3
2
1
250 mA
500 mA
VGS = 2.0 V
VGS = 10 V
VDS = 15 V
ID = 50 mA
VGS = 10 V
VGS = 10 V
ID = 0.5 A
25_C
ID – Drain Current (mA)
ID – Drain Current (A)
ID – Drain Current (A)
rDS(on) – On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
www.vishay.com
11-4 Document Number: 70213
S-04279—Rev. F, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10.1 0.5 1.0
100
10
VDD = 15 V
RL = 25 W
VGS = 0 to 10 V
Threshold Region Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge Load Condition Effects on Switching
Normalized Effective Transient
Thermal Impedance
t1 – Square Wave Pulse Duration (sec)
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (pC)
td(on)
td(off)
tr
tf
10
1
0.01 0 0.25 1.75
0.1
0.5 0.75 1.0 1.25 1.5
100_C
25_C
–55_C
0_C
TJ = 150_C
100
80
60
0010 50
40
20
20 30 40
15.0
12.5
10.0
00 100 600
7.5
5.0
200 300 400
2.5
500
VDS = 30 V
48 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1 1 10010 1 K
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
Notes:
PDM
t2
ID = 0.5 A
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
ID – Drain Current (mA)
C – Capacitance (pF)
VGS – Gate-to-Source Voltage (V)
t – Switching Time (ns)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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