Data
sheet
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10 Gb/s High Sensitivity
Coplanar APD Preamp
Receiver
The module consists of an APD photodetector, a low noise
preamplifier, a connectorized single-mode fibre pigtail
and a hermetic package with coplanar output. Optimized for
use in 10 Gb/s Metro applications, either as a discrete
device or within a transponder, using NRZ Modulation
with or without FEC at data rates up to at least 10.66 Gb/s.
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Features
High Sensitivity, -26.5 dBm typical
Surface Mount MSA compliant
Low Capacitance high speed
InGaAs APD detector
Designed to exceed the
requirements of Telcordia
GR468-CORE
Performance Symbol Min Nom Max Unit
Optical Sensitivity 2 23 -1 BER< 10-12 (4), m=10 Sens -26.5 -24.5 dBm
High frequency -3 dB corner (2), m=10 F3dB 7 7.5 GHz
Deviation from linear phase (d.c-6 GHz) -10 +10 deg
Return loss S22 (130 MHz to 6 GHz) -10 dB
Return loss S22 (130 MHz to 8 GHz) -10 -8 dB
Optical overload 223 -1 BER< 10-12 (4) Psat -3 -1 dBm
APD breakdown voltage temp coefficient Tvbr .050 0.056 .061 V/°C
APD breakdown voltage Vbr 25 40 V
Amplifier bias voltage Vee -5.2 V
Dark current at 90% of Vbr ld 100 nA
Current consumption lcc 75 90 mA
Transimpendance gain (2,3,5) TZG 1100 1440 1800 Ohms
Characteristics
TC = 25 °C unless otherwise specified.
Note: 1) Optical wavelength between 1525nm – 1575nm. Data to 1610 nm available on request.
2) Load impedance is 50 (AC coupled) with a return loss > 20 dB, up to 20 GHz.
3) Excludes APD responsivity.
4) Measured with 10 Gb/s NRZ PRBS data and no FEC.
5) Differential
Parameter Symbol Min Max Unit
Amplifier bias voltage (4) Vcc +0.5 -6 V
Operating temperature (1) Top -40 85 °C
Storage temperature (2) Tstg -40 85 °C
Maximum Transient Optical Input Power (3) Ppo 10 dBm
APD bias voltage (4,5) VAPD 40 V
Fibre bend radius 35 mm
Absolute Maximum Ratings
Class 1 ESD precautions must be observed when handling these devices
1) The operating temperature is defined as the temperature of the module case.
2) The rating is referred to ambient temperature.
3) The optical level that causes no damage to the module. However, the electrical and optical performance
specified in this document may not be guaranteed.
4) Vbr of individual device at given operating temperature is not to be exceeded.
Pin # Symbol Parameter Pin # Symbol Parameter
1 GND Case ground 10 Out_P Positive output
2 Vpd APD bias voltage 11 GND Case ground
3 NC No connection 12 GND Case ground
4 Vee Amplifier bias 13 FBIN Offset feedback
5 Vcc No connection 14 Vcc No connection
6 GND Case ground 15 NC No connection
7 GND Case ground 16 Rth Thermistor
8 Out_N Negative output 17 GND Case ground
9 GND Case ground
Pinout Table
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Circuit Schematic and Dimensions
Vapd
-ve RF out
+ve RF out
Vee (-5.2 V)
RTHERMISTOR
(10k_@25C)
Rth
Figure 1: Schematic Diagram
Figure 2: Typical small signal diagram measured at 10Gb/s 223-1 PRBS @M=10.
Figure 3: Typical large signal eye diagram measure at 10Gb/s 223-1 PRBS.
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Figure 6: Outline Diagram
Ordering Information
AT10GC
Figure 4: AC Transfer function
Figure 5: Output DC offset control using pin 13 (FB_in).
Certificate No. FM 15040
Certificate No. EMS 35100
CAUTION
STATIC SENSITIVE DEVICE
OBSERVE PRECAUTIONS
www.bookham.com REV 1 Feb 2003
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