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BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0
November 2014
BCP69
PNP General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Marking Package Packing Method
BCP69 BCP69 SOT-223 4L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -20 V
VCBO Collector-Base Voltage -30 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector Current - Continuous -1.5 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 to +150 °C
Description
This device is designed for general-purpose medium-
power amplifiers and switches requiring collector cur-
rents to 1.0 A. Sourced from process 77.
SOT-223
1
2
4
3
1. Base 2,4. Collector 3. Emitter
BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
Symbol Parameter Max. Unit
PD
Total Device Dissipation 1.0 W
Derate Above 25°C 8.0 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -20 V
BVCBO Collector-Base Breakdown Voltage IC = -1.0 mA, IE = 0 -30 V
BVEBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -5.0 V
ICBO Collector-Base Cut-Off Current
VCB = -25 V, IE = 0 -100 nA
VCB = -25 V, IE = 0,
TJ = 150°C -10 μA
IEBO Emitter-Base Cut-Off Current VEB = -5.0 V, IC = 0 -100 nA
hFE DC Current Gain
IC = -5 mA, VCE = -1.0 V 50
IC = -500 mA, VCE = -1.0 V 85 375
IC = -1.0 A, VCE = -1.0 V 60
VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0 A, IB = -100 mA -0.5 V
VBE(on) Base-Emitter On Voltage IC = -1.0 A, VCE = -1.0 V -1.0 V
Ccb Collector-Base Capacitance VCB = -10 V, IE = 0,
f = 1.0 MHz 30 pF
hfe Small-Signal Current Gain IC = -50 mA, VCE = -10 V,
f = 20 MHz 2.5
BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation V olt age vs.
Collector Current Figure 4. Base Emitte r On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature Figure 6. Collector-Base Capacitance vs.
Collector-Base Voltage
0.01 0.1 1 2
0
50
100
150
200
250
300
I - COL L EC TOR CU RR ENT (A)
h - TYP ICAL PULSED CURRE NT GAIN
FE
- 40 °C
25 °C
C
V = 5 .0V
CE
125 °C
0.01 0.1 1 3
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A)
V - COLLE CTOR-EMITTER VOLTA GE (V)
CESAT
- 40 °C
25 °C
C
β= 1 0
125 °C
1 10 100 1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAG E (V)
BESAT
C
β= 10
- 40 °C
25 °C
125 °C
1101001000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-E MITTER ON VOLTAGE (V)
BE(O N)
C
V = 5.0 V
CE
- 40 °C
25 °C
125 °C
25 50 75 100 125 150
0.1
1
10
10 0
T - AM BI EN T TE MPE RAT U R E ( C )
I - COLLECTOR CURRENT (nA)
A
V = 20V
CB
°
CBO
0102030
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
C - COLLECTOR-BASE CAPACITANCE (pF)
OBO
CB
f = 1.0 MHz
BCP69 — PNP General-Purpose Amplifier
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BCP69 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Gain Bandwidth Product vs.
Collector Current Figure 8. Power Dissipation vs. Ambient T emperature
1 10 100 1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
T
C
V = 10V
CE
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
PC[W], POWER DISSIPATION
Ta[oC], AM BIENT TEMPERATURE
DETAIL A
SCALE: 2:1
3.10
2.90
6.70
6.20
3.70
3.30
0.84
0.60
2.30
4.60
1.80 MAX
6.10
2.30
LAND PATTERN RECOMMENDATION
0.95
1.90
1.90
3.25
7.30
6.70
GAGE
PLANE
0.60 MIN
SEE DETAIL A
C0.08 C
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
SEATING
PLANE
10°
0° TYP
B
A
0.10 C B
0.10 C B
4
31
0.10
0.00
0.25
R0.15±0.05
R0.15±0.05
1.70
10°
5°
10°
5°
0.35
0.20
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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