MOC3051M, MOC3052M, MOC3053M 6-Pin DIP Random-Phase Triac Driver Optocoupler (600 Volt Peak) www.onsemi.com The MOC3051M, MOC3052M and MOC3053M consist of a GaAs infrared emitting diode optically coupled to a non-zero- crossing silicon bilateral AC switch (triac). These devices isolate low voltage logic from 115 VAC and 240 VAC lines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching performance of inductive loads. PDIP6 CASE 646BY Features * Excellent IFT Stability--IR Emitting Diode Has Low Degradation * 600 V Peak Blocking Voltage * Safety and Regulatory Approvals UL1577, 4,170 VACRMS for 1 Minute DIN EN/IEC60747-5-5 Typical Applications * * * * * * * * Solenoid/Valve Controls Lamp Ballasts Static AC Power Switch Interfacing Microprocessors to 115 VAC and 240 VAC Peripherals Solid State Relay Incandescent Lamp Dimmers Temperature Controls Motor Controls PDIP6 CASE 646BZ PDIP6 CASE 646BX MARKING DIAGRAM MOC3051 V X YY Q ON MOC3051 V X YY Q = ON Semiconductor Logo = Device Code = DIN EN/IEC60747-5-5 Option = One-Digit Year Code = Two-Digit Work Week, = Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering, marking and shipping information on page 9 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 May, 2019 - Rev. 3 1 Publication Order Number: MOC3052M/D MOC3051M, MOC3052M, MOC3053M SAFETY AND INSULATIONS RATINGS As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm VPR Parameter DTI Distance Through Insulation (Insulation Thickness) 0.5 mm RIO Insulation Resistance at TS, VIO = 500 V > 109 W www.onsemi.com 2 MOC3051M, MOC3052M, MOC3053M MAXIMUM RATINGS TA = 25C unless otherwise specified. Parameter Symbol Value Unit TOTAL DEVICE TSTG Storage Temperature -40 to +150 C TOPR Operating Temperature -40 to +85 C TJ -40 to +100 C 260 for 10 seconds C Total Device Power Dissipation at 25C Ambient 330 mW Derate Above 25C 4.4 mW/C IF Continuous Forward Current 60 mA VR Reverse Voltage 3 V PD Total Power Dissipation at 25C Ambient 100 mW Derate Above 25C 1.33 mW/C 600 V 1 A TSOL PD Junction Temperature Range Lead Solder Temperature EMITTER DETECTOR VDRM Off-State Output Terminal Voltage ITSM Peak Non-Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) PD Total Power Dissipation at 25C Ambient Derate Above 25C 300 mW 4 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameters Characteristic Min Typ Max Unit EMITTER VF Input Forward Voltage IF = 10 mA 1.18 1.50 V IR Reverse Leakage Current VR = 3 V 0.05 100 mA IDRM Peak Blocking Current, Either Direction VDRM = 600 V, IF = 0 (Note 1) 10 100 nA VTM Peak On-State Voltage, Either Direction ITM = 100 mA peak, IF = 0 2.2 2.5 V dv/dt Critical Rate of Rise of Off-State Voltage IF = 0, VDRM = 600 V 1000 Device Min DETECTOR V/ms TRANSFER CHARACTERISTICS Symbol DC Characteristic Test Conditions IFT LED Trigger Current, Either Direction Main Terminal Voltage = 3 V (Note 2) IH Holding Current, Either Direction Max Unit MOC3051M 15 mA MOC3052M 10 MOC3053M 6 All Typ 540 www.onsemi.com 3 mA MOC3051M, MOC3052M, MOC3053M ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) (continued) INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Characteristic Test Conditions Min 4170 Typ Max Unit ISOLATION CHARACTERISTICS VISO Input-Output Isolation Voltage (Note 3) f = 60 Hz, t = 1 Minute RISO Isolation Resistance VI-O = 500 VDC 1011 VACRMS W CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF 1. Test voltage must be applied within dv/dt rating. 2. All devices will trigger at an IF value greater than or equal to the maximum IFT specification. For optimum operation over temperature and lifetime of the device, the LED should be biased with an IF that is at least 50% higher than the maximum IFT specification. The IF should not exceed the absolute maximum rating of 60 mA. Example: For MOC3052M, the minimum IF bias should be 10 mA x 150% = 15 mA. 3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. www.onsemi.com 4 MOC3051M, MOC3052M, MOC3053M TYPICAL CHARACTERISTICS 400 ITM - ON-STATE CURRENT (mA) VF - FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 1.3 TA = -40C 1.2 TA = 25C 1.1 TA = 85C 1.0 0.9 300 200 100 0 -100 -200 -300 -400 1 10 100 -3 -2 IF - LED FORWARD CURRENT (mA) NORMALIZED TO TA = 25C 1.2 1.0 0.8 0.6 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) 2 3 15 NORMALIZED TO PW = 100 s 10 5 0 1 10 100 PW - LED TRIGGER PULSE WIDTH (ms) Figure 4. LED Trigger Current vs. LED Pulse Width 4 10000 IDRM - LEAKAGE CURRENT (nA) IH (NORMALIZED) = IH (TA) / IH (TA = 25C) Figure 3. LED Trigger Current vs. Ambient Temperature NORMALIZED TO TA = 25C 3 2 1 0 -40 1 Figure 2. On-State Characteristics IFT (NORMALIZED) = IFT (PW) / IFT (PW = 100 ms) IFT (NORMALIZED) = IFT (TA) / IFT (TA = 25C) 1.4 -20 0 VTM - ON-STATE VOLTAGE (V) Figure 1. LED Forward Voltage vs. Forward Current -40 -1 VDRM = 600 V 1000 100 10 1 0.1 -20 0 20 40 60 80 100 -40 TA, AMBIENT TEMPERATURE (C) -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) Figure 5. Holding Current vs. Ambient Temperature Figure 6. Leakage Current vs. Ambient Temperature www.onsemi.com 5 100 MOC3051M, MOC3052M, MOC3053M APPLICATIONS INFORMATION Basic Triac Driver Circuit LED Trigger Current vs. Pulse Width The random phase triac drivers MOC3051M, MOC3052M and MOC3053M can allow snubberless operations in applications where load is resistive and the external generated noise in the AC line is below its guaranteed dv/dt withstand capability. For these applications, a snubber circuit is not necessary when a noise insensitive power triac is used. Figure 7 shows the circuit diagram. The triac driver is directly connected to the triac main terminal 2 and a series resistor R which limits the current to the triac driver. Current limiting resistor R must have a minimum value which restricts the current into the driver to maximum 1 A. The power dissipation of this current limiting resistor and the triac driver is very small because the power triac carries the load current as soon as the current through driver and current limiting resistor reaches the trigger current of the power triac. The switching transition times for the driver is only one micro second and for power triacs typical four micro seconds. Random phase triac drivers are designed to be phase controllable. They may be triggered at any phase angle within the AC sine wave. Phase control may be accomplished by an AC line zero cross detector and a variable pulse delay generator which is synchronized to the zero cross detector. The same task can be accomplished by a microprocessor which is synchronized to the AC zero crossing. The phase controlled trigger current may be a very short pulse which saves energy delivered to the input LED. LED trigger pulse currents shorter than 100 ms must have increased amplitude as shown on Figure 4. This graph shows the dependency of the trigger current IFT versus the pulse width. IFT in this graph is normalized in respect to the minimum specified IFT for static condition, which is specified in the device characteristic. The normalized IFT has to be multiplied with the devices guaranteed static trigger current. Example: IFT = 10 mA, Trigger PW = 4 ms IF (pulsed) = 10 mA x 3 = 30 mA Triac Driver Circuit for Noisy Environments When the transient rate of rise and amplitude are expected to exceed the power triacs and triac drivers maximum ratings a snubber circuit as shown in Figure 8 is recommended. Fast transients are slowed by the R-C snubber and excessive amplitudes are clipped by the Metal Oxide Varistor MOV. Minimum LED Off Time in Phase Control Applications In phase control applications, one intends to be able to control each AC sine half wave from 0 to 180. Turn on at 0 means full power and turn on at 180 means zero power. This is not quite possible in reality because triac driver and triac have a fixed turn on time when activated at zero degrees. At a phase control angle close to 180 the driver's turn on pulse at the trailing edge of the AC sine wave must be limited to end 200 ms before AC zero cross as shown in Figure 10. This assures that the triac driver has time to switch off. Shorter times may cause loss of control at the following half cycle. Triac Driver Circuit for Extremely Noisy Environments As specified in the noise standards IEEE472 and IEC255-4. Industrial control applications do specify a maximum transient noise dv/dt and peak voltage which is super-imposed onto the AC line voltage. In order to pass this environment noise test a modified snubber network as shown in Figure 9 is recommended. Static dv/dt Critical rate of rise of off-state voltage or static dv/dt is a triac characteristic that rates its ability to prevent false triggering in the event of fast rising line voltage transients when it is in the off-state. When driving a discrete power triac, the triac driver optocoupler switches back to off-state once the power triac is triggered. However, during the commutation of the power triac in application where the load is inductive, both triacs are subjected to fast rising voltages. The static dv/dt rating of the triac driver optocoupler and the commutating dv/dt rating of the power triac must be taken into consideration in snubber circuit design to prevent false triggering and commutation failure. LED Trigger Current versus Temperature Recommended operating LED control current IF lies between the guaranteed IFT and absolute maximum IF. Figure 3 shows the increase of the trigger current when the device is expected to operate at an ambient temperature below 25C. Multiply the datasheet guaranteed IFT with the normalized IFT shown on this graph and an allowance for LED degradation over time. Example: IFT = 10 mA, LED degradation factor = 20% IF at -40C = 10 mA x 1.25 x 120% = 15 mA www.onsemi.com 6 MOC3051M, MOC3052M, MOC3053M VCC TRIAC DRIVER RLED R POWER TRIAC AC LINE CONTROL RET. Q LOAD RLED = (VCC - VFLED - VSATQ) / IFT R = VPAC / ITSM Figure 7. Basic Driver Circuit VCC RLED TRIAC DRIVER R POWER TRIAC RS CS AC LINE MOV CONTROL LOAD RET. Typical Snubber values RS = 33 W, CS = 0.01 mF MOV (Metal Oxide Varistor) protects power triac and driver from transient overvoltages > VDRM max Figure 8. Triac Driver Circuit for Noisy Environments POWER TRIAC VCC RLED TRIAC DRIVER R RS MOV AC LINE CS CONTROL LOAD RET. Recommended snubber to pass IEEE472 and IEC255-4 noise tests RS = 47 W, CS = 0.01 mF Figure 9. Triac Driver Circuit for Extremely Noisy Environments 0 180 AC Line LED PW LED Current LED turn off min. 200 ms Figure 10. Minimum Time for LED Turn Off to Zero Crossing www.onsemi.com 7 MOC3051M, MOC3052M, MOC3053M REFLOW PROFILE Figure 11. Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150C Temperature Maximum (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds Ramp-up Rate (TL to TP) 3C/second maximum Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60 seconds to 150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second maximum Time 25C to Peak Temperature 8 minutes maximum www.onsemi.com 8 MOC3051M, MOC3052M, MOC3053M ORDERING INFORMATION (Note 4) Package Device Shipping MOC3051M DIP 6-Pin Tube (50 Units) MOC3051SM SMT 6-Pin (Lead Bend) Tube (50 Units) MOC3051SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) MOC3051VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC3051SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC3051SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) MOC3051TVM DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 4. The product orderable part number system listed in this table also applies to the MOC3052M and MOC3053M product families. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13449G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B DOCUMENT NUMBER: DESCRIPTION: 98AON13450G PDIP6 8.51x6.35, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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(c) Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13451G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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