MOC3052VM - ON SEMICONDUCTOR - Datasheet.Directory

May, 2019 − Rev. 3

1Publication Order Number:

MOC3052M/D

MOC3051M, MOC3052M,

MOC3053M

6-Pin DIP Random-Phase

Triac Driver Optocoupler

(600 Volt Peak)

The MOC3051M, MOC3052M and MOC3053M consist of a GaAs

infrared emitting diode optically coupled to a non−zero− crossing

silicon bilateral AC switch (triac). These devices isolate low voltage

logic from 115 VAC and 240 VAC lines to provide random phase

control of high current triacs or thyristors. These devices feature

greatly enhanced static dv/dt capability to ensure stable switching

performance of inductive loads.

Features

•Excellent IFT Stability—IR Emitting Diode Has Low Degradation

•600 V Peak Blocking Voltage

•Safety and Regulatory Approvals

♦UL1577, 4,170 VACRMS for 1 Minute

♦DIN EN/IEC60747−5−5

Typical Applications

•Solenoid/Valve Controls

•Lamp Ballasts

•Static AC Power Switch

•Interfacing Microprocessors to 115 VAC and 240 VAC Peripherals

•Solid State Relay

•Incandescent Lamp Dimmers

•Temperature Controls

•Motor Controls

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PDIP6

CASE 646BY

PDIP6

CASE 646BZ

PDIP6

CASE 646BX

See detailed ordering, marking and shipping information on

page 9 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

ON = ON Semiconductor Logo

MOC3051 = Device Code

V = DIN EN/IEC60747−5−5 Option

X = One−Digit Year Code

YY = Two−Digit Work Week,

Q = Assembly Package Code

MOC3051

V X YY Q

PIN CONNECTIONS

MOC3051M, MOC3052M, MOC3053M

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SAFETY AND INSULATIONS RATINGS

As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with

the safety ratings shall be ensured by means of protective circuits.

Parameter Characteristics

Installation Classifications per DIN VDE 0110/1.89 Table 1,

For Rated Mains Voltage

< 150 VRMS I–IV

< 300 VRMS I–IV

Climatic Classification 40/85/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and

Sample Test with tm = 10 s, Partial Discharge < 5 pC

1360 Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,

100% Production Test with tm = 1 s, Partial Discharge < 5 pC

1594 Vpeak

VIORM Maximum Working Insulation Voltage 850 Vpeak

VIOTM Highest Allowable Over−Voltage 6000 Vpeak

External Creepage ≥ 7 mm

External Clearance ≥ 7 mm

External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm

DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm

RIO Insulation Resistance at TS, VIO = 500 V > 109W

MOC3051M, MOC3052M, MOC3053M

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MAXIMUM RATINGS TA = 25°C unless otherwise specified.

Symbol Parameter Value Unit

TOTAL DEVICE

TSTG Storage Temperature −40 to +150 °C

TOPR Operating Temperature −40 to +85 °C

TJJunction Temperature Range −40 to +100 °C

TSOL Lead Solder Temperature 260 for 10 seconds °C

PDTotal Device Power Dissipation at 25°C Ambient 330 mW

Derate Above 25°C 4.4 mW/°C

EMITTER

IFContinuous Forward Current 60 mA

VRReverse Voltage 3 V

PDTotal Power Dissipation at 25°C Ambient 100 mW

Derate Above 25°C 1.33 mW/°C

DETECTOR

VDRM Off−State Output Terminal Voltage 600 V

ITSM Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A

PDTotal Power Dissipation at 25°C Ambient 300 mW

Derate Above 25°C 4 mW/°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

INDIVIDUAL COMPONENT CHARACTERISTICS

Symbol Parameters Characteristic Min Typ Max Unit

EMITTER

VFInput Forward Voltage IF = 10 mA 1.18 1.50 V

IRReverse Leakage Current VR = 3 V 0.05 100 mA

DETECTOR

IDRM Peak Blocking Current, Either Direction VDRM = 600 V, IF = 0

(Note 1)

10 100 nA

VTM Peak On−State Voltage, Either Direction ITM = 100 mA peak,

IF = 0

2.2 2.5 V

dv/dt Critical Rate of Rise of Off−State Voltage IF = 0, VDRM = 600 V 1000 V/ms

TRANSFER CHARACTERISTICS

Symbol DC Characteristic Test Conditions Device Min Typ Max Unit

IFT LED Trigger Current,

Either Direction

Main Terminal

Voltage = 3 V (Note 2)

MOC3051M 15 mA

MOC3052M 10

MOC3053M 6

IHHolding Current,

Either Direction

All 540 mA

MOC3051M, MOC3052M, MOC3053M

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) (continued)

INDIVIDUAL COMPONENT CHARACTERISTICS

Symbol Characteristic Test Conditions Min Typ Max Unit

ISOLATION CHARACTERISTICS

VISO Input−Output Isolation Voltage (Note 3) f = 60 Hz, t = 1 Minute 4170 VACRMS

RISO Isolation Resistance VI−O = 500 VDC 1011 W

CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF

1. Test voltage must be applied within dv/dt rating.

2. All devices will trigger at an IF value greater than or equal to the maximum IFT specification. For optimum operation over temperature and

lifetime of the device, the LED should be biased with an IF that is at least 50% higher than the maximum IFT specification. The IF should not

exceed the absolute maximum rating of 60 mA.

Example: For MOC3052M, the minimum IF bias should be 10 mA x 150% = 15 mA.

3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are

common.

MOC3051M, MOC3052M, MOC3053M

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TYPICAL CHARACTERISTICS

IF − LED FORWARD CURRENT (mA)

VF − FORWARD VOLTAGE (V)

Figure 1. LED Forward Voltage vs. Forward Current Figure 2. On−State Characteristics

VTM − ON−STATE VOLTAGE (V)

ITM − ON−STATE CURRENT (mA)

TA − AMBIENT TEMPERATURE (°C)

IFT (NORMALIZED) = IFT (TA) / IFT (TA = 25°C)

Figure 3. LED Trigger Current vs. Ambient

Temperature

Figure 4. LED Trigger Current vs. LED Pulse Width

IFT (NORMALIZED) = IFT (PW) / IFT (PW = 100 ms)

PW − LED TRIGGER PULSE WIDTH (ms)

TA, AMBIENT TEMPERATURE (°C)

IH (NORMALIZED) = IH (TA) / IH (TA = 25°C)

Figure 5. Holding Current vs. Ambient

Temperature

Figure 6. Leakage Current vs. Ambient

Temperature

IDRM − LEAKAGE CURRENT (nA)

TA, AMBIENT TEMPERATURE (°C)

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

−400

−300

−200

−100

100

200

300

400

0.1

100

1000

10000

0.6

0.8

1.0

1.2

1.4

NORMALIZED TO PW = 100 μs

1 10 100 −3−2−2−101 23

−40 −20 0 20 40 60 80 100 1 10 100

−40 −20 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100

TA = −40°C

TA = 25°C

TA = 85°C

NORMALIZED TO TA = 25°C

NORMALIZED TO TA = 25°CVDRM = 600 V

MOC3051M, MOC3052M, MOC3053M

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APPLICATIONS INFORMATION

Basic Triac Driver Circuit

The random phase triac drivers MOC3051M,

MOC3052M and MOC3053M can allow snubberless

operations in applications where load is resistive and the

external generated noise in the AC line is below its

guaranteed dv/dt withstand capability. For these

applications, a snubber circuit is not necessary when a noise

insensitive power triac is used. Figure 7 shows the circuit

diagram. The triac driver is directly connected to the triac

main terminal 2 and a series resistor R which limits the

current to the triac driver. Current limiting resistor R must

have a minimum value which restricts the current into the

driver to maximum 1 A.

The power dissipation of this current limiting resistor and

the triac driver is very small because the power triac carries

the load current as soon as the current through driver and

current limiting resistor reaches the trigger current of the

power triac. The switching transition times for the driver is

only one micro second and for power triacs typical four

micro seconds.

Triac Driver Circuit for Noisy Environments

When the transient rate of rise and amplitude are expected

to exceed the power triacs and triac drivers maximum

ratings a snubber circuit as shown in Figure 8 is

recommended. Fast transients are slowed by the R−C

snubber and excessive amplitudes are clipped by the Metal

Oxide Varistor MOV.

Triac Driver Circuit for Extremely Noisy Environments

As specified in the noise standards IEEE472 and

IEC255−4.

Industrial control applications do specify a maximum

transient noise dv/dt and peak voltage which is

super−imposed onto the AC line voltage. In order to pass this

environment noise test a modified snubber network as

shown in Figure 9 is recommended.

LED Trigger Current versus Temperature

Recommended operating LED control current IF lies

between the guaranteed IFT and absolute maximum IF.

Figure 3 shows the increase of the trigger current when the

device is expected to operate at an ambient temperature

below 25°C. Multiply the datasheet guaranteed IFT with the

normalized IFT shown on this graph and an allowance for

LED degradation over time.

Example:

IFT = 10 mA, LED degradation factor = 20%

IF at −40°C = 10 mA × 1.25 × 120% = 15 mA

LED Trigger Current vs. Pulse Width

Random phase triac drivers are designed to be phase

controllable. They may be triggered at any phase angle

within the AC sine wave. Phase control may be

accomplished by an AC line zero cross detector and a

variable pulse delay generator which is synchronized to the

zero cross detector. The same task can be accomplished by

a microprocessor which is synchronized to the AC zero

crossing. The phase controlled trigger current may be a very

short pulse which saves energy delivered to the input LED.

LED trigger pulse currents shorter than 100 ms must have

increased amplitude as shown on Figure 4. This graph shows

the dependency of the trigger current IFT versus the pulse

width. IFT in this graph is normalized in respect to the

minimum specified IFT for static condition, which is

specified in the device characteristic. The normalized IFT

has to be multiplied with the devices guaranteed static

trigger current.

Example:

IFT = 10 mA, Trigger PW = 4 ms

IF (pulsed) = 10 mA × 3 = 30 mA

Minimum LED Off Time in Phase Control Applications

In phase control applications, one intends to be able to

control each AC sine half wave from 0° to 180°. Turn on at

0° means full power and turn on at 180° means zero power.

This is not quite possible in reality because triac driver and

triac have a fixed turn on time when activated at zero

degrees. At a phase control angle close to 180°the driver’s

turn on pulse at the trailing edge of the AC sine wave must

be limited to end 200 ms before AC zero cross as shown in

Figure 10. This assures that the triac driver has time to switch

off. Shorter times may cause loss of control at the following

half cycle.

Static dv/dt

Critical rate of rise of off−state voltage or static dv/dt is a

triac characteristic that rates its ability to prevent false

triggering in the event of fast rising line voltage transients

when it is in the off−state. When driving a discrete power

triac, the triac driver optocoupler switches back to off−state

once the power triac is triggered. However, during the

commutation of the power triac in application where the

load is inductive, both triacs are subjected to fast rising

voltages. The static dv/dt rating of the triac driver

optocoupler and the commutating dv/dt rating of the power

triac must be taken into consideration in snubber circuit

design to prevent false triggering and commutation failure.

MOC3051M, MOC3052M, MOC3053M

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Figure 7. Basic Driver Circuit

LOAD

TRIAC DRIVER

CONTROL

AC LINE

POWER TRIAC

RET.

VCC RLED

RLED = (VCC − VFLED − VSATQ) / IFT

R = VPAC / ITSM

Figure 8. Triac Driver Circuit for Noisy Environments

LOAD

TRIAC DRIVER

CONTROL

AC LINE

POWER TRIAC

RET.

VCC RLED

MOV

Typical Snubber values RS = 33 W, CS = 0.01 mF

MOV (Metal Oxide Varistor) protects power triac and

driver from transient overvoltages > VDRM max

Figure 9. Triac Driver Circuit for Extremely Noisy Environments

LOAD

TRIAC DRIVER

CONTROL

AC LINE

POWER TRIAC

RET.

VCC RLED

MOV

Recommended snubber to pass IEEE472 and IEC255−4 noise tests

RS = 47 W, CS = 0.01 mF

Figure 10. Minimum Time for LED Turn Off to Zero Crossing

0° 180°

LED PW

LED Current

LED turn off min. 200 ms

AC Line

MOC3051M, MOC3052M, MOC3053M

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REFLOW PROFILE

Figure 11. Reflow Profile

Profile Feature Pb−Free Assembly Profile

Temperature Minimum (Tsmin) 150°C

Temperature Maximum (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds

Ramp−up Rate (TL to TP) 3°C/second maximum

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL)60 seconds to 150 seconds

Peak Body Package Temperature 260°C +0°C / –5°C

Time (tP) within 5°C of 260°C30 seconds

Ramp−down Rate (TP to TL) 6°C/second maximum

Time 25°C to Peak Temperature 8 minutes maximum

MOC3051M, MOC3052M, MOC3053M

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ORDERING INFORMATION (Note 4)

Device Package Shipping

MOC3051M DIP 6−Pin Tube (50 Units)

MOC3051SM SMT 6−Pin (Lead Bend) Tube (50 Units)

MOC3051SR2M SMT 6−Pin (Lead Bend) Tape and Reel (1000 Units)

MOC3051VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option Tube (50 Units)

MOC3051SVM SMT 6−Pin (Lead Bend),

DIN EN/IEC60747−5−5 Option

Tube (50 Units)

MOC3051SR2VM SMT 6−Pin (Lead Bend),

DIN EN/IEC60747−5−5 Option

Tape and Reel (1000 Units)

MOC3051TVM DIP 6−Pin, 0.4” Lead Spacing,

DIN EN/IEC60747−5−5 Option

Tube (50 Units)

4. The product orderable part number system listed in this table also applies to the MOC3052M and MOC3053M product families.

PDIP6 8.51x6.35, 2.54P

CASE 646BX

ISSUE O

DATE 31 JUL 2016

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

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DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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PDIP6 8.51X6.35, 2.54P

PDIP6 8.51x6.35, 2.54P

CASE 646BY

ISSUE A

DATE 15 JUL 2019

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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PDIP6 8.51x6.35, 2.54P

CASE 646BZ

ISSUE O

DATE 31 JUL 2016

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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PDIP6 8.51X6.35, 2.54P

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