2N5545/46/47/JANTX/JANTXV Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY jVGS1 - VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) 2N5545 -0.5 to -4.5 -50 1.5 -50 5 2N5546 -0.5 to -4.5 -50 1.5 -50 10 2N5547 -0.5 to -4.5 -50 1.5 -50 15 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise High CMRR: 100 dB DESCRIPTION The 2N5545/5546/5547JANTX/JANTXV are monolithic dual n-channel JFETs designed to provide high input impedance (IG < 50 pA) for general-purpose differential amplifiers. The 2N5545 features minimum system error and calibration (5 mV offset maximum). TO-71 S1 G2 1 D1 6 2 D2 5 3 4 G1 S2 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70253 S-04031--Rev. C, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 4 mW/_C above 25_C www.vishay.com 8-1 2N5545/46/47/JANTX/JANTXV Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5545 Symbol Test Conditions Typa V(BR)GSS IG = -1 mA, VDS = 0 V VGS(off) Saturation Drain Currentb IDSS Gate Reverse Current IGSS Parameter 2N5546 Max 2N5547 Min Max Min Min Max Unit -57 -50 -50 VDS = 15 V, ID = 0.5 nA -2 -0.5 -4.5 -0.5 -4.5 -0.5 -4.5 VDS = 15 V, VGS = 0 V 3 0.5 8 0.5 8 0.5 8 mA VGS = -30 V, VDS = 0 V -10 -100 -100 -100 pA -20 -150 -150 -150 nA -50 -50 -50 pA Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current Gate-Source Forward Voltage -50 V TA = 150_C IG VDG = 15 V, ID = 200 mA -3 VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en Noise Figure NF 2.5 VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz 1.5 6.0 1.5 6.0 1.5 6.0 mS mS 2 25 25 25 3.5 6 6 6 1.3 2 2 2 20 180 200 nV Hz 0.1 3.5 5 dB pF VDS = 15 V, ID = 200 mA f = 10 Hz RG = 1 MW Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratioc Transconductance Ratioc |V G7S1 - V GS2| D|V GS1 - V GS2| DT I DSS1 I DSS2 gfs1 gfs2 VDG = 15 V, ID = 50 mA 5 10 15 VDG = 15 V, ID = 200 mA 5 10 15 VDG = 15 V, ID = 200 mA TA = -55 to 125_C 10 20 40 VDS = 15 V, VGS = 0 V 0.98 0.95 1 0.9 1 0.9 1 VDS = 15 V, ID = 200 mA f = 1 kHz 0.99 0.97 1 0.95 1 0.9 1 mV mV/ _C Differential Output Conductance |g os1 - gos2| VDG = 15 V, VGS = 0 V f = 1 kHz 0.1 1 2 3 mS Differential Gate Current |I G1 - I G2| VDG = 15 V, ID = 200 mA TA = 125_C 1 5 5 5 nA Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 8-2 NQP Document Number: 70253 S-04031--Rev. C, 04-Jun-01 2N5545/46/47/JANTX/JANTXV Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 3 2.6 IDSS gfs 3 2.2 2 1.8 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 1 1.4 1 0 0 -1 -2 -3 -4 IG @ ID = 200 mA 10 nA TA = 125_C IG - Gate Leakage 4 100 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 5 1 nA 50 mA IGSS @ 125_C 100 pA 50 mA 200 mA 10 pA IGSS @ 25_C TA = 25_C 1 pA 0.1 pA 0 -5 10 VGS(off) - Gate-Source Cutoff Voltage (V) 20 30 40 VDG - Drain-Gate Voltage (V) Output Characteristics Output Characteristics 5 5 VGS(off) = -3 V VGS = 0 V VGS(off) = -2 V VGS = 0 V 3 -0.2 V -0.4 V 2 -0.6 V -0.8 V -1.0 V 1 ID - Drain Current (mA) ID - Drain Current (mA) -0.3 V 4 4 -0.6 V 3 -0.9 V -1.2 V 2 -1.5 V -1.8 V 1 -2.1 V -1.2 V -1.4 V 0 0 4 8 12 16 -2.4 V 0 20 0 VDS - Drain-Source Voltage (V) 4 8 12 16 20 VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 2 2.5 VGS(off) = -2 V VGS = 0 V VGS(off) = -3 V -0.2 V -0.4 V 1.2 -0.6 V -0.8 V 0.8 -1.0 V -1.2 V 0.4 2.0 ID - Drain Current (mA) VGS = 0 V 1.6 ID - Drain Current (mA) 50 -0.6 V -0.9 V 1.5 -1.2 V -1.5 V 1.0 -1.8 V -2.1 V 0.5 -1.4 V 0 0.2 0.4 0.6 VDS - Drain-Source Voltage (V) Document Number: 70253 S-04031--Rev. C, 04-Jun-01 0.8 -2.4 V 0 -1.6 V 0 -0.3 V 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) www.vishay.com 8-3 2N5545/46/47/JANTX/JANTXV Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current Transfer Characteristics 5 100 VGS(off) = -2 V VDG = 15 V TA = 25_C VDS = 10 V (mV) TA = -55_C 3 VGS1 - VGS2 ID - Drain Current (mA) 4 25_C 2 2N5545 125_C 1 0 1 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.01 1 ID - Drain Current (mA) Voltage Differential with Temperature vs. Drain Current Common Mode Rejection Ratio vs. Drain Current 130 VDG = 15 V DTA = 25 to 125_C DTA = -55 to 25_C ( m V/ _C ) 0.1 VGS - Gate-Source Voltage (V) 100 DVDG CMRR = 20 log D V GS1 - VGS2 120 CMRR (dB) 2N5547 Dt 10 2N5545 110 DVDG = 10 - 20 V 100 5 - 10 V D VGS1 - VGS2 2N5547 10 90 80 1 0.01 0.1 1 0.01 ID - Drain Current (mA) Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current rDS(on) - Drain-Source On-Resistance ( ) 1k AV - Voltage Gain 80 60 VGS(off) = -3 V VGS(off) = -2 V 40 AV + g fs R L 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V RL + 0 0.01 10 V ID 8-4 800 600 VGS(off) = -2 V 400 VGS(off) = -3 V 200 0 0.1 ID - Drain Current (mA) www.vishay.com 1 ID - Drain Current (mA) 100 20 0.1 1 0.01 0.1 1 ID - Drain Current (mA) Document Number: 70253 S-04031--Rev. C, 04-Jun-01 2N5545/46/47/JANTX/JANTXV Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 C rss - Reverse Feedback Capacitance (pF) C iss - Input Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 4 5V 2 15 V f = 1 MHz 4 VDS = 0 V 3 5V 2 1 15 V 0 0 0 -4 -8 -12 -16 0 -20 -4 Equivalent Input Noise Voltage vs. Frequency VGS(off) = -2 V -20 VDS = 15 V f = 1 kHz 2.0 16 gos - Output Conductance (S) Hz -16 2.5 VDS = 10 V en - Noise Voltage nV / -12 Output Conductance vs. Drain Current 20 ID @ 200 mA 12 8 VGS = 0 V 4 0 10 100 1k 10 k 1.5 TA = -55_C 1.0 25_C 0.5 125_C 0 0.01 100 k 0.1 1 f - Frequency (Hz) ID - Drain Current (mA) Common-Source Forward Transconductance vs. Drain Current On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 1k 2.5 VDS = 15 V f = 1 kHz 2.0 TA = -55_C 1.5 25_C 1.0 0.5 125_C gos 800 8 6 600 400 4 rDS 2 200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 15 V, VGS = 0 V, f = 1 kHz 0 0 0 0.01 0.1 ID - Drain Current (mA) Document Number: 70253 S-04031--Rev. C, 04-Jun-01 1 g os- Output Conductance ( mS) rDS(on) - Drain-Source On-Resistance ( ) VGS(off) = -2 V gfs - Forward Transconductance (mS) -8 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) www.vishay.com 8-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1