PD -91535 IRL540NS/L HEXFET(R) Power MOSFET Advanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.044 G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for lowprofile applications. ID = 36A S D 2 P ak T O -26 2 Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 36 26 120 3.8 140 0.91 16 310 18 14 5.0 -55 to + 175 Units A W W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units --- --- 1.1 40 C/W 5/13/98 IRL540NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 --- --- --- --- 1.0 14 --- --- --- --- --- --- --- --- --- --- --- RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LS Internal Source Inductance --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- V(BR)DSS IGSS Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- --- --- 11 81 39 62 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.044 VGS = 10V, ID = 18A 0.053 VGS = 5.0V, ID = 18A 0.063 VGS = 4.0V, ID = 15A 2.0 V VDS = V GS, ID = 250A --- S V DS = 25V, ID = 18A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 74 ID = 18A 9.4 nC VDS = 80V 38 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 50V --- ID = 18A ns --- RG = 5.0, VGS = 5.0V --- R D = 2.7, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 1800 --- VGS = 0V 350 --- pF VDS = 25V 170 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 36 --- --- showing the A G integral reverse --- --- 120 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 18A, VGS = 0V --- 190 290 ns TJ = 25C, IF = 18A --- 1.1 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = 1.9mH Uses IRL540N data and test conditions RG = 25, IAS = 18A. (See Figure 12) ISD 18A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. IRL540NS/L 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 100 10 2.5V 20s PULSE WIDTH T J = 25C 1 0.1 1 10 100 10 2.5V 20s PULSE WIDTH T J = 175C 1 A 100 0.1 1 V D S , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 3.0 R D S ( o n ) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 25C TJ = 175C 10 V D S = 50V 20s PULSE WIDTH 1 2 4 6 8 V G S , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics A 100 V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 10 A I D = 30A 2.5 2.0 1.5 1.0 0.5 V G S = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature A IRL540NS/L 3000 15 V G S , Gate-to-Source Voltage (V) V G S = 0V, f = 1MHz C iss = C gs+ C gd , C SHORTED ds C rss = C gd C oss = C ds+ C gd C, Capacitance (pF) C iss 2000 C oss 1000 C rss 0 A 1 10 I D = 18A V D S = 80V V D S = 50V V D S = 20V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 V D S , Drain-to-Source Voltage (V) 40 60 80 A 100 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RD S ( o n ) I D , Drain Current (A) I S D , Reverse Drain Current (A) 20 100 TJ = 175C T J = 25C 10 100 10s 100s 10 1ms VG S = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V S D , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.8 T C = 25C T J = 175C Single Pulse 1 1 10ms A 10 100 V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 1000 IRL540NS/L 40 RD VDS VGS I D , Drain Current (A) D.U.T. RG 30 + -VDD 5.0V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 P DM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRL540NS/L 1 5V L VD S D .U .T RG IA S 10V tp D R IV E R + V - DD A 0.0 1 Fig 12a. Unclamped Inductive Test Circuit E A S , Single Pulse Avalanche Energy (mJ) 800 TOP BOTTOM ID 7.3A 13A 18A 600 400 200 A 0 25 50 V (B R )D SS 75 100 125 150 175 Starting T J , Junction Temperature (C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 5.0 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit IRL540NS/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive D= Period P.W. + - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRL540NS/L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 10 .1 6 (.4 00 ) R E F. -B- 4 .6 9 (.18 5) 4 .2 0 (.16 5) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 1 5.49 (.6 10) 1 4.73 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5.28 (.2 08 ) 4.78 (.1 88 ) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.55 (.0 22) 0.46 (.0 18) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 2.5 4 (.100 ) 2X IRL540NS/L Package Outline TO-262 Outline Part Marking Information TO-262 IRL540NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .10 (.63 4 ) 15 .90 (.62 6 ) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 60.00 (2.3 62) MIN . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/