CREAT BY ART
- Very low profile - typical height of 0.68mm
- Reduce switching and conduction loss
- Ideal for automated placement
- Ultrafast recovery times for high frequency
- Halogen-free according to IEC 61249-2-21 definition
ESH1DM to ESH1JM is ideal device for the compact space PCB design.
Specially as boost diode in power factor correction circuitry.
The device is also intended for use as a free wheeling diode in power supplies
For chargers, LED lighting, and other power switching applications.
SYMBOL UNIT
V
RRM
V
I
F(AV)
A
Trr ns
Cj pF
T
JO
C
T
STG O
C
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 4: Thermal resistance R
θJA
- from junction to ambient, R
θJM
- and junction to mount
Document Number：DS_D1401019 Version: B14
ESH1JM
D3 D5 D7
400 600200
TYP. MAX.
1
50
Maximum reverse recovery time (Note 2) 25
Taiwan Semiconductor
TYP. MAX.
1.25 1.5
Marking code
Maximum instantaneous forward voltage (Note 1)
@ 1 A V
F
Typical junction capacitance (Note 3) 3
Typical thermal resistance (Note 4) R
θJM
R
θJA
40
92
Note 1: Pulse test with PW=300 μsec, 1% duty cycle
-55 to +150
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V DC
Maximum reverse current @ rated VR
T
J
=25 ℃
T
J
=125 ℃
I
R
μA-
5
O
C/W
Operating junction temperature range
Storage temperature range -55 to +150
V
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
15
MECHANICAL DATA
Case: Micro SMA
Micro SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
A
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
APPLICATION
ESH1DM ESH1GM
ESH1DM thru ESH1JM
Surface Mount Ultrafast Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
Maximum repetitive peak reverse voltage
Polarity: Indicated by cathode band
Weight: 0.006g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
PART NO.
Note 1: "x" defines voltage from 200V (ESH1DM) to 600V (ESH1JM)
Note 2: For Micro SMA: Packing code (Whole series with green compound)
PART NO.
ESH1JM
(TA=25℃ unless otherwise noted)
Document Number: DS_D1401019 Version: B14
ESH1DM thru ESH1JM
Taiwan Semiconductor
PACKING
ESH1xM
(Note 1) RS Suffix "G" Micro SMA 3000 / 7" Plastic reel
G
EXAMPLE
ORDERING INFORMATION
PACKAGEGREEN COMPOUND
CODE
GREEN COMPOUND
CODE
PACKING CODE
RATINGS AND CHARACTERISTICS CURVES
PACKING CODE
RS
DESCRIPTION
Green compoundESH1JM RSG
PREFERRED P/N
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150 175
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
0
5
10
15
110100
PEAK FORWARD SURAGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
8.3ms Single Half Sine-Wave
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
TJ=125℃
RESISTIVE OR
INDUVTIVE LOAD
0.001
0.01
0.1
1
10
0 20406080100
INSTANTANEOUS REVERSE CURRENT
(uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
TJ=25℃
TJ=125℃
Min Max Min Max
A 2.30 2.70 0.091 0.106
B 2.10 2.30 0.083 0.091
C 0.63 0.73 0.025 0.029
D 0.10 0.20 0.004 0.008
E 1.15 1.35 0.045 0.053
F 0.65 0.85 0.026 0.034
G 1.15 1.35 0.045 0.053
H 0.75 0.95 0.030 0.037
I 1.10 1.50 0.043 0.059
J 0.55 0.75 0.022 0.030
K 0.55 0.75 0.022 0.030
L 0.65 0.85 0.026 0.034
P/N = Marking code
YW = Date Code
Document Number: DS_D1401019 Version: B14
Unit (inch)
0.043
0.079
0.020
0.031
0.039
MARKING DIAGRAM
Taiwan Semiconductor
C0.5
D0.8
E1.0
SUGG ESTED PAD LAYOUT
Symbol Unit (mm)
A1.1
B2.0
ESH1DM thru ESH1JM
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
