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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
SDA-1000
GaAs DISTRIBUTED AMPLIFIER
RFMD’s SDA-1000 is a directly coupled (DC) GaAs microwave monolithic
integrated circuit (MMIC) distributed driver amplifier die designed to sup-
port a wide array of high frequency commercial, military, and space appli-
cations. They are ideal for wideband amplifier gain blocks, broadband test
equipment (ATE), military, and aerospace applications.
3
2
1
7 6
4
5
VG2
IN
VTI
OUTVTO
VCAS
NC
DC to 20GHz Operation
+26dBm P
3dB
Gain=14dB Typical
Noise Figure=4dB
Output Voltage to 8V
PP
300mA Total Current
Applications
Military
Aerospace
Broadband ATE
Instrumentation
DS091020
Die: 3.1mmx1.45mmx0.102mm
SDA-1000
GaAs Distrib-
uted Amplifier
Parameter Specification Unit Condition
Min. Typ. Max.
Electrical Specifications
T
A
=+25°C, V
DD
=+8V
DC
, VG2 at=+3.5 V
DC
,
I
DD
=300mA
Operating Frequency 0 20 GHz
Gain 13.8 14.5 dB 10 GHz
Maximim Output Voltage 8 V
P-P
IP3 at 10GHz 36 dBm P
OUT
0dBm
P1dB at 10GHz 25 dBm
P
3dB
at 10GHz 26.5 dBm
Noise Figure at Mid-Band 4 dB
Input Return Loss 13 dB
Output Return Loss 15
Supply Current 300 mA
Supply Voltage 8 V
DC
*Adjust VTI between -1.5V
DC
to +0.2V
DC
to achieve I
DD
=300 mA typical., V
G2
=3.5V
DC
typ.
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SDA-1000
Typical Electrical Performance
Absolute Maximum Ratings
Parameter Rating Unit
Drain Bias Voltage (V
DD
) +9.0 V
DC
Gate Bias Voltage (VTI) -2 to 0 V
DC
Gate Bias Voltage (V
G2
)(V
DD
-8.0) V
DC
to V
DD
V
RF Input Power (V
DD
=+8.0V
DC
)20dBm
Operating Channel Temperature (T
J
)+175 °C
Continuous Power Dissipation
(T=+85°C) 3.5 W
Thermal Resistance (Pad to Die Bot-
tom) 25 °C/W
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +85 °C
ESD JESD22-A114 Human Body
Model (HBM) Class 0 (All Pads)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
-25
-20
-15
-10
-5
0
0 2 4 6 8 101214161820
S11
(dB)
Frequency (GHz)
S11 versus Frequency
-40C
25C
85C
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 101214161820
S21
(dB)
Frequency (GHz)
S21 versus Frequency
-40C
25C
85C
-80
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 101214161820
S12
(dB)
Frequency (GHz)
S12 versus Frequency
-40
C
25C
85C
-40
-35
-30
-25
-20
-15
-10
-5
0
02468101214161820
S22
dB
Frequency (GHz)
S22 versus Frequency
-40C
25C
85C
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SDA-1000
Typical Performance (Circuit Board Data with Bias Tees) V
S
=5V, I
D
=51mA, R
BIAS
=33
0
5
10
15
20
25
30
0 2 4 6 8 101214161820222426
P1dB
(dBm)
Frequency (GHz)
P1dB versus Frequency
25C
-40C
85C
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 101214161820
OIP3
(dB)
Frequency (GHz)
OIP3 versus Frequency
at Po=0 dBm/tone (1MHz tone spacing)
25C
-40C
85C
0
5
10
15
20
25
30
35
0 2 4 6 8 101214161820
P1dB
(dBm)
Frequency (GHz)
P3dB versus Frequency
25C
-40C
85C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0 2 4 6 8 101214161820
NF
(dB)
Fre quency (GHz)
NF versus Frequency
25C
85C
-40C
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SDA-1000
Application Circuit
Package Drawing
Refer to drawing posted at www.rfmd.com for tolerances.
Notes:
1. All dimensions in microns
2. No connection required for ground bond pads
3. Die thickness is 0.102mm (4 MIL)
4. Typical bond pad is 0.100mm square
5. Backside metallization: gold
6. Backside metal is ground
7. Bond pad metallization: gold
1000 pF 1000 pF
1000 pF
VG2
RFIN
1000
pF
RFOUT
VDD
*
*Note: Drain Bias (VDD) must be applied
through a broadband bias tee or external bias
network
1
2
76
54
3
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SDA-1000
Pin Function Description Interface Schematic
1RFIN
RF Input. This pad is DC coupled and matched to 50 from DC to 20GHz. 50
microstrip transmission line on 0.127mm (5mil) thick alumina thin film sub-
strate is recommended for RF input and output.
2VG2
VG2 is an optional pad. It may be used to bias the cascode gate of the amplifier.
If this port is used, a 1000pF bypass capacitor with the shortest wirebond length
possible is recommended to prevent low frequency gain ripple.
3VTO
The output drain termination pad. This pad requires a suggested 1000pF bypass
capacitor with the shortest wirebond length to prevent low frequency gain ripple.
The value of the external capacitance limits the low frequency response of the
amplifier.
4RFOUT and
VDD
RF Output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina
thin film substrate is recommended for RF input and output. Connect the DC bias
(V
DD
) network to provide drain current (I
DD
).
5VCAS
Provides VG2 gate voltage to the cascode amplifier. The value is ~ (V
CC
/2 - abso-
lute value of VTI).
6VG21
Not connected.
7VTI
Input gate voltage, used to bias the amplifier. The value is between -1.5V
DC
(device is pinched OFF) to +0.2V
DC
(fully ON). This pad requires a bypass capaci-
tor to ground with the shortest possible wirebond length to prevent low frequency
gain ripple. The value of the external capacitance limits the low frequency
response of the amplifier.
Die GND Ground connection. Connect die bottom directly to ground plane for best perfor-
mance. NOTE: The die should be connected directly to the ground plane with con-
ductive epoxy.
RFIN
1000 pF
Term
Resistor
10 pF
1000 pF
RFOUT
1000 pF
1000 pF
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SDA-1000
Assembly Diagram
Measurement Technique
All specifications and typical performances reported in this document were measured in the following manner. Data was taken
using a temperature controlled probe station utilizing 150μm pitch GSG probes. The interface between the probes and inte-
grated circuit was made with a coplanar to microstrip ceramic test interface. The test interface was then wire bonded to the
die as shown in the figure below using 1mil diameter bondwires. The spacing between the test interface and the die was
200μm, and the bond wire loop height was 100 μm. The thickness of the test interface is 125μm (5mil). The calibration of the
test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire
attachment. Therefore, all data represents the integrated circuit and accompanying bond wires.
50-Ohm
Transmission
Line
1
2
3
1000pF
Capacitor
To GND
1000pF
Capacitor
To GND
3mil
Nominal
Gap
4
5
1000pF
Capacitor
To GND
67
1000pF
Capacitor
To GND
To VTI
Power Supply
To
VG2
Power
Supply
RF & DC Bonds
1mil Gold Wire
7 of 8DS091020
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SDA-1000
Ordering Information
Part Number Description Delivery Method Die/GelPak
SDA1000 GaAs Distributed Amplifier, 20GHz,
3.10mmx1.45mm Die GelPak 10 pcs or More
SDA1000SB GaAs Distributed Amplifier, 20GHz,
3.10mmx1.45mm Die GelPak 2 pcs
8 of 8 DS091020
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SDA-1000