SDA-1000 SDA-1000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm Product Description Features RFMD's SDA-1000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, broadband test equipment (ATE), military, and aerospace applications. Optimum Technology Matching(R) Applied VTO 3 GaAs HBT GaAs MESFET IN 1 SiGe BiCMOS Si BiCMOS Si CMOS 7 6 NC GaAs pHEMT VTI 5 VCAS SiGe HBT DC to 20GHz Operation +26dBm P3dB Gain=14dB Typical Noise Figure=4dB Output Voltage to 8VPP 300mA Total Current Applications 4 OUT VG2 2 InGaP HBT Military Aerospace Broadband ATE Instrumentation Si BJT GaN HEMT InP HBT RF MEMS LDMOS Parameter Min. Specification Typ. Max. Unit TA =+25C, VDD =+8VDC, VG2 at=+3.5VDC, IDD =300mA Electrical Specifications Operating Frequency Gain Maximim Output Voltage IP3 at 10GHz P1dB at 10GHz P3dB at 10GHz Condition 0 13.8 14.5 8 36 20 GHz dB VP-P dBm 25 26.5 dBm dBm Noise Figure at Mid-Band 4 Input Return Loss 13 Output Return Loss 15 Supply Current 300 Supply Voltage 8 *Adjust VTI between -1.5VDC to +0.2VDC to achieve IDD =300mA typical., VG2 =3.5VDC typ. 10GHz POUT 0dBm dB dB mA VDC RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS091020 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SDA-1000 Absolute Maximum Ratings Parameter Rating Unit Drain Bias Voltage (VDD) +9.0 VDC Gate Bias Voltage (VTI) -2 to 0 VDC Gate Bias Voltage (VG2) (VDD -8.0) VDC to VDD V 20 dBm +175 C Continuous Power Dissipation (T=+85C) 3.5 W Thermal Resistance (Pad to Die Bottom) 25 C/W Storage Temperature -40 to +150 C Operating Temperature -40 to +85 C RF Input Power (VDD =+8.0VDC) Operating Channel Temperature (TJ) ESD JESD22-A114 Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 0 (All Pads) Typical Electrical Performance S21 versus Frequency S11 versus Frequency 20 0 18 16 -5 14 S21 (dB) -10 S11 (dB) 12 10 8 -15 6 -20 -40C 4 25C 2 -40C 25C 85C 85C 0 -25 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 10 12 14 16 0 0 -10 -5 -20 -10 -30 S22 dB -40 20 -15 -20 -25 -50 -30 -60 -40C -40C -70 25C -35 25C 85C 85C -40 -80 0 2 4 6 8 10 12 Frequency (GHz) 2 of 8 18 S22 versus Frequency S12 versus Frequency S12 (dB) 8 Frequency (GHz) Frequency (GHz) 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091020 SDA-1000 Typical Performance (Circuit Board Data with Bias Tees) VS =5V, ID =51mA, RBIAS =33 OIP3 versus Frequency at Po=0 dBm/tone (1MHz tone spacing) P1dB versus Frequency 30 45 40 25 35 20 P1dB (dBm) 30 OIP3 (dB) 15 10 25 20 15 10 25C 5 -40C 25C -40C 5 85C 85C 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 Frequency (GHz) 10 12 14 16 18 20 Frequency (GHz) P3dB versus Frequency 35 NF versus Frequency 15 14 13 30 12 11 25 10 P1dB (dBm) 20 NF (dB) 15 9 8 7 6 5 10 4 5 25C 3 25C -40C 2 85C 85C 1 -40C 0 0 0 2 4 6 8 10 12 Frequency (GHz) DS091020 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 SDA-1000 Application Circuit VDD 1000 pF VG2 2 1000 pF 3 5 1 RFIN RFOUT 4 * 7 6 1000 pF 1000 pF *Note: Drain Bias (VDD) must be applied through a broadband bias tee or external bias network Package Drawing Refer to drawing posted at www.rfmd.com for tolerances. Notes: 1. All dimensions in microns 2. No connection required for ground bond pads 3. Die thickness is 0.102mm (4 MIL) 4. Typical bond pad is 0.100mm square 5. Backside metallization: gold 6. Backside metal is ground 7. Bond pad metallization: gold 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091020 SDA-1000 Pin 1 Function RFIN 2 VG2 Description Interface Schematic RF Input. This pad is DC coupled and matched to 50 from DC to 20GHz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. RFIN VG2 is an optional pad. It may be used to bias the cascode gate of the amplifier. If this port is used, a 1000pF bypass capacitor with the shortest wirebond length possible is recommended to prevent low frequency gain ripple. 3 VTO The output drain termination pad. This pad requires a suggested 1000pF bypass capacitor with the shortest wirebond length to prevent low frequency gain ripple. The value of the external capacitance limits the low frequency response of the amplifier. 4 RFOUT and VDD RF Output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. Connect the DC bias (VDD) network to provide drain current (IDD). 1000 pF Term Resistor 10 pF RFOUT 1000 pF VDD RFOUT Note: Drain Bias (VDD) must be applied through a broadband bias tee or external bias network 5 6 7 Die DS091020 VCAS VG21 VTI GND Provides VG2 gate voltage to the cascode amplifier. The value is ~ (VCC/2 - absolute value of VTI). 1000 pF Not connected. Input gate voltage, used to bias the amplifier. The value is between -1.5VDC (device is pinched OFF) to +0.2VDC (fully ON). This pad requires a bypass capacitor to ground with the shortest possible wirebond length to prevent low frequency gain ripple. The value of the external capacitance limits the low frequency response of the amplifier. Ground connection. Connect die bottom directly to ground plane for best performance. NOTE: The die should be connected directly to the ground plane with conductive epoxy. 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1000 pF 5 of 8 SDA-1000 Assembly Diagram 1000pF Capacitor To GND 1000pF Capacitor To GND 3mil Nominal Gap 3 4 2 1000pF Capacitor To GND RF & DC Bonds 1mil Gold Wire 1 7 6 50-Ohm Transmission Line 5 1000pF Capacitor To GND To VG2 Power Supply To VTI Power Supply Measurement Technique All specifications and typical performances reported in this document were measured in the following manner. Data was taken using a temperature controlled probe station utilizing 150m pitch GSG probes. The interface between the probes and integrated circuit was made with a coplanar to microstrip ceramic test interface. The test interface was then wire bonded to the die as shown in the figure below using 1mil diameter bondwires. The spacing between the test interface and the die was 200m, and the bond wire loop height was 100m. The thickness of the test interface is 125m (5mil). The calibration of the test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire attachment. Therefore, all data represents the integrated circuit and accompanying bond wires. 6 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091020 SDA-1000 Ordering Information DS091020 Part Number Description Delivery Method Die/GelPak SDA1000 GaAs Distributed Amplifier, 20GHz, 3.10mmx1.45mm Die GelPak 10 pcs or More SDA1000SB GaAs Distributed Amplifier, 20GHz, 3.10mmx1.45mm Die GelPak 2 pcs 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 8 SDA-1000 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091020