BUZ 110SL SIPMOS Power Transistor Features Product Summary * N channel Drain source voltage VDS * Drain-Source on-state resistance RDS(on) Continuous drain current ID Enhancement mode * Avalanche rated 55 V 0.01 80 A * Logic Level * dv/dt rated * 175C operating temperature Type Package Ordering Code Packaging BUZ110SL P-TO220-3-1 Q67040-S4004-A2 Tube BUZ110SL E3045A P-TO263-3-2 Q67040-S4004-A6 Tape and Reel BUZ110SL E3045 P-TO263-3-2 Q67040-S4004-A5 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 C 80 TC = 100 C 59 Pulsed drain current Unit IDpulse 320 EAS 460 EAR 20 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 200 W -55... +175 C TC = 25 C Avalanche energy, single pulse mJ ID = 80 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s IS = 80 A, VDS = 40 V, di/dt = 200 A/s, Tjmax = 175 C TC = 25 C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 05.99 BUZ 110SL Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.75 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area1) - - 40 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 55 - - Gate threshold voltage, VGS = VDS ID = 200 A VGS(th) 1.2 1.6 2 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA A VDS = 50 V, VGS = 0 V, T j = 25 C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 4.5 V, ID = 59 A - 0.012 0.015 VGS = 10 V, ID = 59 A - 0.0075 0.01 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BUZ 110SL Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. g fs 30 67 - S Ciss - 2600 3250 pF Coss - 750 940 Crss - 395 495 t d(on) - 20 30 tr - 70 105 t d(off) - 45 70 tf - 25 40 Dynamic Characteristics Transconductance VDS2*ID*RDS(on)max , ID = 59 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 4.5 V, ID = 80 A, RG = 2 Rise time VDD = 30 V, V GS = 4.5 V, ID = 80 A, RG = 2 Turn-off delay time VDD = 30 V, V GS = 4.5 V, ID = 80 A, RG = 2 Fall time VDD = 30 V, V GS = 4.5 V, ID = 80 A, RG = 2 Data Sheet 3 05.99 BUZ 110SL Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 13 19.5 Q gd - 42 63 Qg - 110 165 V(plateau) - 3.6 - V IS - - 80 A I SM - - 320 VSD - 1.2 2 V t rr - 90 135 ns Q rr - 0.14 0.21 C Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 80 A Gate to drain charge VDD = 40 V, ID = 80 A Gate charge total VDD = 40 V, ID = 80 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 80 A Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, I F = 160 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BUZ 110SL Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V BUZ110SL BUZ110SL 220 90 W A 180 70 60 140 ID Ptot 160 120 50 100 40 80 30 60 20 40 10 20 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 C parameter : D = tp /T 10 3 BUZ110SL 10 1 BUZ110SL K/W tp = 8.7s 10 s = V ID DS /I D 10 2 10 0 Z thJC A 10 -1 R DS (o n) 100 s D = 0.50 10 -2 10 1 0.20 0.10 1 ms 0.05 10 ms 0.02 10 -3 DC 0.01 single pulse 10 0 -1 10 10 0 10 1 V 10 10 -4 -7 10 2 VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 110SL Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 s parameter: V GS BUZ110SL BUZ110SL Ptot = 200W A l 0.050 kj i h g 160 f ID 140 120 e 100 80 b c d e f VGS [V] a 2.5 d 60 c b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 0.040 RDS(on) 190 0.035 0.030 0.025 0.020 0.015 g 40 0.010 20 b 0.005 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 VDS i k j VGS [V] = b 3.0 c 3.5 20 d 4.0 e f 4.5 5.0 40 60 g 5.5 80 h i 6.0 6.5 100 j 7.0 h l k l 8.0 10.0 140 A 170 120 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 s VDS 2 x I D x RDS(on)max gfs = f(ID ); Tj = 25C parameter: gfs 80 70 S A 60 55 60 50 gfs ID 50 40 45 40 35 30 30 25 20 20 15 10 10 5 0 1.0 1.5 2.0 2.5 3.0 V 0 0 4.0 VGS Data Sheet 10 20 30 40 50 A 65 ID 6 05.99 BUZ 110SL Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 200 A parameter : ID = 59 A, VGS = 4.5 V BUZ110SL 3.0 V 0.055 2.4 VGS(th) RDS(on) 0.045 0.040 0.035 2.2 2.0 1.8 1.6 0.030 1.4 0.025 1.2 98% 1.0 0.020 typ max 0.8 0.015 0.6 0.010 0.4 0.005 0.2 0.000 -60 typ min 0.0 -60 -20 20 60 100 140 C -20 20 60 100 140 200 C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 s 10 4 10 3 BUZ110SL A pF Ciss C IF 10 2 10 3 Coss 10 1 Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 10 20 V 10 0 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 110SL Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 80 A, V DD = 25 V RGS = 25 VGS = f (QGate ) parameter: ID puls = 80 A BUZ110SL 500 16 mJ V 400 12 VGS EAS 350 300 250 10 8 0,2 VDS max 200 0,8 VDS max 6 150 4 100 2 50 0 20 40 60 80 100 120 140 C 0 0 180 Tj 20 40 60 80 100 120 140 nC 170 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ110SL 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 C 200 Tj Data Sheet 8 05.99