BUZ110SL-E3045 - Infineon Technologies

Data Sheet 1 05.99

SIPMOS Power Transistor

Product Summary

Drain source voltage 55

V

DS V

Drain-Source on-state resistance Ω

0.01

R

DS(on)

I

D

Continuous drain current 80 A

Features

• N channel

• Enhancement mode

• Avalanche rated

• Logic Level

• d

v

/d

t

rated

• 175˚C operating temperature

Pin 1 Pin 2 Pin 3

G D S

PackagingType Package Ordering Code

BUZ110SL TubeP-TO220-3-1 Q67040-S4004-A2

BUZ110SL E3045A Tape and ReelQ67040-S4004-A6P-TO263-3-2 TubeBUZ110SL E3045 P-TO263-3-2 Q67040-S4004-A5

Maximum Ratings, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol UnitValue

Continuous drain current

T

C = 25 ˚C

T

C = 100 ˚C

80

59

I

DA

Pulsed drain current

T

C = 25 ˚C

I

Dpulse 320

Avalanche energy, single pulse

I

D = 80 A,

V

DD = 25 V,

R

GS = 25 ΩmJ

E

AS 460

Avalanche energy, periodic limited by

T

j

max 20

E

AR

Reverse diode d

v

/d

t

I

S = 80 A,

V

DS = 40 V, d

i

/d

t

= 200 A/µs,

T

jmax = 175 ˚C

d

v

/d

t

6 kV/µs

Gate source voltage

V

GS ±20 V

Power dissipation

T

C = 25 ˚C

P

tot 200 W

Operating and storage temperature

T

j

,

T

st

g

˚C-55... +175

55/175/56IEC climatic category; DIN IEC 68-1

BUZ 110SL

Data Sheet 2 05.99

Thermal Characteristics

Parameter ValuesSymbol Unit

typ. max.min.

Characteristics

R

thJC - - 0.75 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded

R

thJA - 62

-

62

40

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area1)

R

thJA

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol UnitValues

min. max.typ.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = 0.25 mA -

V

(BR)DSS 55 - V

Gate threshold voltage,

V

GS =

V

DS

I

D = 200 µA

V

GS(th) 21.61.2

Zero gate voltage drain current

V

DS = 50 V,

V

GS = 0 V,

T

j = 25 ˚C

V

DS = 50 V,

V

GS = 0 V,

T

j = 150 ˚C

-

I

DSS µA

1

100

0.1

-

Gate-source leakage current

V

GS = 20 V,

V

DS = 0 V

I

GSS - 10 nA100

Drain-Source on-state resistance

V

GS = 4.5 V,

I

D = 59 A

V

GS = 10 V,

I

D = 59 A

R

DS(on) -

-0.012

0.0075 0.015

0.01

Ω

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

BUZ 110SL

Data Sheet 3 05.99

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS≥2*

I

D*

R

DS(on)max ,

I

D = 59 A

g

fs 30 67 - S

Input capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

iss - 2600 3250 pF

Output capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

oss - 750 940

Reverse transfer capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

rss - 395 495

Turn-on delay time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 80 A,

R

G = 2 Ω

t

d(on) - 20 30 ns

Rise time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 80 A,

R

G = 2 Ω

t

r- 70 105

Turn-off delay time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 80 A,

R

G = 2 Ω

t

d(off) - 45 70

Fall time

V

DD = 30 V,

V

GS = 4.5 V,

I

D = 80 A,

R

G = 2 Ω

t

f- 25 40

BUZ 110SL

Data Sheet 4 05.99

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD = 40 V,

I

D = 80 A 19.5 nC13

Q

gs -

- 42

Q

gd

Gate to drain charge

V

DD = 40 V,

I

D = 80 A 63

Gate charge total

V

DD = 40 V,

I

D = 80 A,

V

GS = 0 to 10 V - 110 165

Q

g

Gate plateau voltage

V

DD = 40 V,

I

D = 80 A

V

(plateau) 3.6 - V-

Reverse Diode

Inverse diode continuous forward current

T

C = 25 ˚C

I

S- - 80 A

Inverse diode direct current,pulsed

T

C = 25 ˚C

I

SM - - 320

Inverse diode forward voltage

V

GS = 0 V,

I

F = 160 A

V

SD - 1.2 V2

Reverse recovery time

V

R = 30 V,

I

F=

I

S , d

i

F/d

t

= 100 A/µs

t

rr - 90 ns135

Reverse recovery charge

V

R = 30 V,

I

F=

l

S , d

i

F/d

t

= 100 A/µs

Q

rr - µC0.14 0.21

BUZ 110SL

Data Sheet 5 05.99

Power Dissipation

P

tot =

f

(

T

C)

0 20 40 60 80 100 120 140 160˚C 190

T

C

0

20

40

60

80

100

120

140

160

180

W

220 BUZ110SL

P

tot

Drain current

I

D =

f

(

T

C)

parameter:

V

GS ≥ 10 V

0 20 40 60 80 100 120 140 160˚C 190

T

C

0

10

20

30

40

50

60

70

A

90 BUZ110SL

I

D

Transient thermal impedance

Z

thJC =

f

(

t

p)

parameter :

D

=

t

p/

T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

t

p

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

BUZ110SL

Z

thJC

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

I

D =

f

(

V

DS)

parameter :

D

= 0 ,

T

C = 25 ˚C

10 -1 10 0 10 1 10 2

V

DS

0

10

1

10

2

10

3

10

A

BUZ110SL

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

100 µs

10 µs

t

p = 8.7µs

BUZ 110SL

Data Sheet 6 05.99

Typ. output characteristics

I

D =

f

(

V

DS)

parameter:

t

p = 80 µs

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0

V

DS

0

20

40

60

80

100

120

140

160

A

190 BUZ110SL

I

D

V

GS [V]

a

a 2.5

b

b 3.0

c

c 3.5

d

d 4.0

ee 4.5

f

f 5.0

g

g 5.5

h

h 6.0

i

i 6.5

j

j 7.0

k

k 8.0

l

P

tot = 200W

l 10.0

Typ. drain-source-on-resistance

R

DS(on) =

f

(

I

D)

parameter:

V

GS

0 20 40 60 80 100 120 140 A170

I

D

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

Ω

0.050 BUZ110SL

R

DS(on)

V

GS [V] =

b

3.0

c

3.5

d

4.0

e

4.5

f

5.0

g

5.5

h

6.0

i

6.5

j

7.0

k

8.0

l

10.0

Typ. transfer characteristics

I

D=

f

(

V

GS)

parameter:

t

p = 80 µs

V

DS ≥ 2 x

I

D x

R

DS(on)max

1.0 1.5 2.0 2.5 3.0 V4.0

V

GS

0

10

20

30

40

50

60

A

80

I

D

Typ. forward transconductance

g

fs

= f

(

I

D)

;

T

j = 25˚C

parameter:

g

fs

0 10 20 30 40 50 A65

I

D

0

5

10

15

20

25

30

35

40

45

50

55

60

S

70

g

fs

BUZ 110SL

Data Sheet 7 05.99

Drain-source on-resistance

R

DS(on) =

f

(

T

j)

parameter :

I

D = 59 A,

V

GS = 4.5 V

-60 -20 20 60 100 140 ˚C 200

T

j

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

Ω

0.055 BUZ110SL

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter :

V

GS =

V

DS,

I

D = 200 µA

-60 -20 20 60 100 140 ˚C 200

T

j

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

V

3.0

V

GS(th)

min

typ

max

Typ. capacitances

C = f (V

DS

)

parameter:

V

GS = 0 V,

f

= 1 MHz

0 10 20 V40

V

DS

2

10

3

10

4

10

pF

C

Ciss

Coss

Crss

Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j ,

t

p = 80 µs

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

0

10

1

10

2

10

3

10

A

BUZ110SL

I

F

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 175 ˚C typ

T

j = 175 ˚C (98%)

BUZ 110SL

Data Sheet 8 05.99

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D puls = 80 A

0 20 40 60 80 100 120 140nC 170

Q

Gate

0

2

4

6

8

10

12

V

16 BUZ110SL

V

GS

DS max

V

0,8

DS max

V

0,2

Avalanche Energy

E

AS =

f

(

T

j)

parameter:

I

D = 80 A,

V

DD = 25 V

R

GS = 25 Ω

20 40 60 80 100 120 140 ˚C 180

T

j

0

50

100

150

200

250

300

350

400

mJ

500

E

AS

Drain-source breakdown voltage

V

(BR)DSS =

f

(

T

j)

-60 -20 20 60 100 140 ˚C 200

T

j

50

52

54

56

58

60

62

64

V

66 BUZ110SL

V

(BR)DSS