1
Transistor
2SB0621, 2SB0621A (2SB621, 2SB621A)
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A)
■Features
●Low collector to emitter saturation voltage VCE(sat).
●High transition frequency fT.
■Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
0.45 +0.2
–0.10.45 +0.2
–0.1
1.27 1.27
2.3±0.2
2.54±0.15
213
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
2SB0621
2SB0621A
2SB0621
2SB0621A
■Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–30
–60
–25
–50
–5
85
50
typ
– 0.2
– 0.85
200
20
max
– 0.1
340
–0.4
–1.2
30
Unit
µA
V
V
V
V
V
MHz
pF
2SB0621
2SB0621A
2SB0621
2SB0621A
*hFE1 Rank classification
Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional part number.
2
Transistor 2SB0621, 2SB0621A
0 16040 12080 14020 10060
0
1.0
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
0.1
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0–10–8–2–6–4
0
–1.5
–1.25
–1.0
– 0.75
– 0.5
– 0.25
Ta=25˚C
I
B
=–10mA
–1mA
–2mA
–3mA
–4mA
–5mA
–6mA
–7mA
–8mA
–9mA
Collector to emitter voltage VCE (V)
Collector current IC (A)
0–12–10–8–2–6–4
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
VCE=–10V
TC=25˚C
Base current IB (mA)
Collector current I
C
(A)
– 0.01
– 0.1 –1–10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 IC/IB=10
–25˚C
Ta=75˚C
25˚C
Collector current IC (A)
Collector to emitter saturation voltage V
CE(sat)
(V)
– 0.01
– 0.1 –1–10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
Ta=–25˚C
75˚C
25˚C
Collector current IC (A)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1–10
– 0.03
– 0.3 –3
0
500
400
300
200
100
450
350
250
150
50
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (A)
Forward current transfer ratio h
FE
1 3 10 30 100
0
200
160
120
80
40
180
140
100
60
20
VCB=–10V
Ta=25˚C
Emitter current IE (mA)
Transition frequency f
T
(MHz)
–1–3–10 –30 –100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25˚C
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
0.1 1 10 1000.3 3 30
0
–120
–100
–80
–60
–40
–20
IC=–10mA
Ta=25˚C
2SB0621A
2SB0621
Base to emitter resistance RBE (kΩ)
Collector to emitter voltage V
CER
(V)
PC—Ta IC—VCE IC—IB
VCE(sat) —ICVBE(sat) —IChFE —IC
fT—IECob —VCB VCER —RBE
3
Transistor 2SB0621, 2SB0621A
0 16040 12080 14020 10060
1
10
10
2
10
3
10
4
V
CE
=–10V
Ambient temperature Ta (˚C)
ICEO (Ta)
ICEO (Ta=25˚C)
– 0.01
– 0.1 –1–10
– 0.03
– 0.3 –3
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10 Single pulse
Ta=25˚C
t=10ms
2SB0621A
2SB0621
t=1s
I
CP
I
C
Collector to emitter voltage VCE (V)
Collector current IC (A)
ICEO —Ta Area of safe operation (ASO)
Please read the following notes before using the datasheets
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2001 MAR
