1
2
3
10
9
8
4
5
7
6
N/C
+VCC
VOUT
N/C
N/C
N/C
N/C
VNON-INV
-VCC
VINV
1
2
3
8
4
7
N/C
+VCC
VOUT
N/C
N/C
VNON-INV
-VCC
VINV
6
5
LMH6702QML
www.ti.com
SNOSAQ2E JULY 2005REVISED MARCH 2013
1.7 GHz, Ultra Low Distortion, Wideband Op Amp
Check for Samples: LMH6702QML
1FEATURES DESCRIPTION
The LMH6702 is a very wideband, DC coupled
2 VS= ±5V, TA= 25°C, AV= +2V/V, RL= 100,monolithic operational amplifier designed specifically
VOUT = 2VPP, Typical Unless Noted: for wide dynamic range systems requiring exceptional
Available with Radiation Ensurance signal fidelity. Benefitting from TI's current feedback
High Dose Rate 300 krad(Si) architecture, the LMH6702 offers unity gain stability at
exceptional speed without need for external
ELDRS Free 300 krad(Si) compensation.
3dB Bandwidth (VOUT = 0.2 VPP) 720 MHz With its 720MHz bandwidth (AV= 2V/V, VO= 2VPP),
Low Noise 1.83nV/Hz 10-bit distortion levels through 60MHz (RL= 100),
Fast Settling to 0.1% 13.4ns 1.83nV/Hz input referred noise and 12.5mA supply
Fast Slew Rate 3100V/μscurrent, the LMH6702 is the ideal driver or buffer for
high-speed flash A/D and D/A converters.
Supply Current 12.5mA Wide dynamic range systems such as radar and
Output Current 80mA communication receivers, requiring a wideband
Low Intermodulation Distortion (75MHz) amplifier offering exceptional signal purity, will find the
67dBc LMH6702's low input referred noise and low harmonic
Improved Replacement for CLC409 and and intermodulation distortion make it an attractive
CLC449 high speed solution.
The LMH6702 is constructed using TI's VIP10
APPLICATIONS complimentary bipolar process and TI's proven
Flash A/D Driver current feedback architecture.
D/A transimpedance Buffer
Wide Dynamic Range IF Amp
Radar/Communication Receivers
Line Driver
High Resolution Video
Connection Diagrams
Figure 1. 8-Lead CDIP (NAB) Figure 2. 10-Lead CLGA (NAC)
Top View Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2005–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LMH6702QML
SNOSAQ2E JULY 2005REVISED MARCH 2013
www.ti.com
Absolute Maximum Ratings(1)
Supply Voltage (VCC) ±6.75VDC
Common Mode Input Voltage (VCM) V-to V+
Power Dissipation (PD)(2) 1W
Junction Temperature (TJ) +175°C
Lead Temperature (soldering, 10 seconds) +300°C
Storage Temperature Range -65°C TA+150°C
Thermal Resistance
θJA
CDIP (Still Air) 170°C/W
CDIP (500LF/Min Air Flow) 100°C/W
CLGA (Still Air) 220°C/W
CLGA (500LF/Min Air Flow) 150°C/W
θJC
CDIP 35°C/W
CLGA 37°C/W
Package Weight (Typical)
CDIP 1078mg
CLGA 227mg
ESD Tolerance (3) 1000V
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the
device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions see the Electrical
Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3) Human body model, 1.5kin series with 100pF.
Recommended Operating Conditions
Supply Voltage (VCC) ±5VDC to ±6VDC
Gain Range ±1 to ±10
Ambient Operating Temperature Range (TA) -55°C to +125°C
Quality Conformance Inspection
MIL-STD-883, Method 5005, Group A
Subgroup Description Temp ( C)
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
2Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMH6702QML
LMH6702QML
www.ti.com
SNOSAQ2E JULY 2005REVISED MARCH 2013
LMH6702 Electrical Characteristics DC Parameters(1)(2)
The following conditions apply, unless otherwise specified.
RL= 100, VCC = ±5VDC, AV= +2 feedback resistor (RF) = 250, gain resistor (RG) = 250
Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
IBN Input Bias Current, Noninverting -15 +15 μA 1, 2
-21 +21 μA 3
IBI Input Bias Current, Iverting -30 +30 μA 1, 2
-34 +34 μA 3
VIO Input Offset Voltage -4.5 +4.5 mV 1, 3
-6.0 +6.0 mV 2
ICC Supply Current, no load RL=15 mA 1, 2, 3
PSSR Power Supply Rejection Ratio -VCC = -4.5V to -5.0V, 45 dB 1, 2, 3
+VCC = +4.5V to +5.0V
(1) The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table.
Negative cur rent shall be defined as convential current flow out of a device terminal.
(2) Pre and Post irradiation limits are identical to those listed under the DC parameter tables above. Post irradiation testing is conducted at
room temperature, +25°C, only. Testing is performed as specified in MIL-STD-883 Test Method 1019 Condition A. The ELDRS-Free part
is also tested per Test Method 1019 Conditions D.
LMH6702 Electrical Characteristics AC Parameters (1)(2)
The following conditions apply, unless otherwise specified.
RL= 100, VCC = ±5VDC, AV= +2 feedback resistor (RF) = 250, gain resistor (RG) = 250
Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
HD33rd Harmonic Distortion 2VPP at 20MHz -62 dBc 4
GFPL Gain Flatness Peaking 0.1MHz to 75MHz, VO< 0.5VPP 0.4 dB 4
GFPH Gain Flatness Peaking > 75MHz, VO< 0.5VPP 2.0 dB 4
GFRH Gain Flatness Rolloff 75MHz to 125MHz, VO<0.5VPP 0.2 dB 4
HD22nd Harmonic Distortion 2VPP at 20MHz -52 dBc 4
(1) The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table.
Negative cur rent shall be defined as convential current flow out of a device terminal.
(2) These parameters are not post irradiation tested.
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LMH6702QML
1M 10M 100M 1G
FREQUENCY (Hz)
-7
-6
-5
-4
-3
-2
-1
0
1
GAIN (dB)
-430
-380
-330
-280
-230
-180
-130
-80
-30
PHASE (°)
AV = -1
AV = -10
AV = -4
AV = -2
VOUT = 2VPP
RF = 237:
RL = 100:
PHASE
GAIN
LMH6702QML
SNOSAQ2E JULY 2005REVISED MARCH 2013
www.ti.com
LMH6702 Electrical Characteristics Drift Values Parameters(1)
The following conditions apply, unless otherwise specified.
RL= 100, VCC = ±5VDC, AV= +2 feedback resistor (RF) = 250, gain resistor (RG) = 250
"Delta not required on B level product. Delta required for S-level product at Group B5 only, or as specified on the Internal
Processing Instruction (IPI)." Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
IBN Input Bias Current Noninverting -0.3 +0.3 μA 1
IBI Input Bias Current Inverting -3.0 +3.0 μA 1
VIO Input Offset Voltage -0.3 +0.3 mV 1
(1) The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table.
Negative cur rent shall be defined as convential current flow out of a device terminal.
Figure 3. Inverting Frequency Response
4Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMH6702QML
02 4 6 8 10 14
TIME (ns)
-1.5
-1
-0.5
0
0.5
1
1.5
VOUT (V)
VO = 2VPP
RL = 100:
12
AV = -2
AV = +2
0 100M 200M 300M 400M 500M
-7
-6
-5
-4
-3
-2
-1
0
1
GAIN (dB)
FREQUENCY (Hz)
AV = +4
VO = 2VPP
RF = 237:
GAIN
PHASE
50:
1k:
100:-250
-200
-150
-100
-50
0
50
100
150
PHASE (°)
50:
0 200M 400M 600M 800M 1G
-7
-6
-5
-4
-3
-2
-1
0
1
GAIN (dB)
FREQUENCY (Hz)
AV = +2
VO = 2VPP
RF = 237:
GAIN
PHASE
1k:
100:
100:
-250
-200
-150
-100
-50
0
50
100
150
PHASE (°)
50:
1k:
50:
10M 100M 1G 10G
FREQUENCY (Hz)
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
GAIN (dB)
VOUT = 0.5 VPP
AV = 2
RF = 232:
-270
-216
-162
-108
-54
0
PHASE (°)
1M 10M 100M 1G
FREQUENCY (Hz)
-7
-6
-5
-4
-3
-2
-1
0
1
GAIN (dB)
VO = 2VPP
RL = 100:
RF = 237:
AV = +1
AV = +2
AV = +10
AV = +4
GAIN
PHASE
AV = +2
AV = +4
AV = +1
-250
-200
-150
-100
-50
0
50
100
150
PHASE (°)
1M 10M 100M 1G
FREQUENCY (Hz)
-7
-6
-5
-4
-3
-2
-1
0
1
GAIN (dB)
-430
-380
-330
-280
-230
-180
-130
-80
-30
PHASE (°)
AV = -1
AV = -10
AV = -4
AV = -2
VOUT = 2VPP
RF = 237:
RL = 100:
PHASE
GAIN
LMH6702QML
www.ti.com
SNOSAQ2E JULY 2005REVISED MARCH 2013
Typical Performance Characteristics
(TA= 25°C, VS= ±5V, RL= 100, RF= 237; Unless Specified).
Non-Inverting Frequency Response Inverting Frequency Response
Figure 4. Figure 5.
Small Signal Bandwidth Frequency Response for Various RL’s, AV= +2
Figure 6. Figure 7.
Frequency Response for Various RL’s, AV= +4 Step Response, 2VPP
Figure 8. Figure 9.
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: LMH6702QML
-40 -15 10 35 60 85 110 135
-10
-8
-4
-2
0
2
-6
8
10
IBI (µA)
TEMPERATURE (°C)
UNIT 1
UNIT 3
UNIT 2
4
6
-40 -15 10 35 60 85 110 135
-12
-11
-10
-9
-8
-7
-6
-5
-4
IBN (µA)
TEMPERATURE (°C)
UNIT 1
UNIT 3
UNIT 2
-40 -15 10 35 60 85 110 135
-4
-3.5
-2.5
-2
-1.5
-1
-3
0.5
VOS (mV)
TEMPERATURE (°C)
UNIT 1
UNIT 3
UNIT 2
-0.5
0
0 10 20 30 40 50 60
-4
-3
-2
-1
0
1
3
4
VOUT (V)
TIME (ns)
AV = +2
VOUT = 6VPP
RL = 100:
2
110 100 1k
TIME (ns)
0.001
0.01
0.1
1
SETTLING ERROR (%)
RL = 100:
LMH6702QML
SNOSAQ2E JULY 2005REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics (continued)
(TA= 25°C, VS= ±5V, RL= 100, RF= 237; Unless Specified).
Step Response, 6VPP Percent Settling vs. Time
Figure 10. Figure 11.
RSand Settling Time vs. CLInput Offset for 3 Representative Units
Figure 12. Figure 13.
Inverting Input Bias for 3 Representative Units Non-Inverting Input Bias for 3 Representative Units
Figure 14. Figure 15.
6Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMH6702QML
-1.5 1.5
VOUT (V)
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
DP (°)
PAL
RF = 237:
RL = 150:
DG
DP
00.6 1.2 -0.009
-0.006
-0.003
0
0.003
0.006
0.009
DG (%)
-1.2 -0.6
-0.9 -0.3 0.3 0.9
-1.5 1.5
VOUT (V)
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
DG (%)
NTSC
RF = 237:
RL = 150:
DG
DP
00.6 1.2
-0.6
-1.2
DP (°)
-0.006
-0.004
-0.002
0
0.002
0.004
0.006
0.3 0.9-0.3
-0.9
1
10
1000
100 1k 10k 100k 1M
FREQUENCY (Hz)
100
10M
INVERTING CURRENT
VOLTAGE
NON-INVERTING
CURRENT
NOISE VOLTAGE (nV/ Hz)
NOISE CURRENT (pA/ Hz)
0
10
20
30
40
70
CMRR/PSRR (dB)
50
60
-55
-45
-35
-25
-15
15
-5
5
20 LOG (RO)
1k 10k 100k 1M 10M
FREQUENCY (Hz) 100M
+ PSRR
- PSRR
RO
CMRR
VS = ±5V
RL = 100:
LMH6702QML
www.ti.com
SNOSAQ2E JULY 2005REVISED MARCH 2013
Typical Performance Characteristics (continued)
(TA= 25°C, VS= ±5V, RL= 100, RF= 237; Unless Specified).
Noise CMRR, PSRR, ROUT
Figure 16. Figure 17.
Transimpedance DG/DP (NTSC)
Figure 18. Figure 19.
DG/DP (PAL)
Figure 20.
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: LMH6702QML
4
3
2
7
6
LMH6702
VOUT
+
-
VIN
+5V
-5V
CPOS
6.8µF
RGRF
.01µF
6.8µF
CNEG
.01µF
RT
25:0.1µF
CSS
SELECT RT TO
YIELD DESIRED
RIN = RT||RG
AV = VOUT
VIN
RF
RG=
4
3
2
7
6
LMH6702
VOUT
+
-
VIN
+5V
-5V
CPOS
6.8µF
RG
RF
.01µF
6.8µF
CNEG
.01µF
RIN 0.1µF
CSS
AV = 1 +RF/RG = VOUT/VIN
LMH6702QML
SNOSAQ2E JULY 2005REVISED MARCH 2013
www.ti.com
APPLICATION SECTION
FEEDBACK RESISTOR
Figure 21. Recommended Non-Inverting Gain Circuit
Figure 22. Recommended Inverting Gain Circuit
The LMH6702 achieves its excellent pulse and distortion performance by using the current feedback topology.
The loop gain for a current feedback op amp, and hence the frequency response, is predominantly set by the
feedback resistor value. The LMH6702 is optimized for use with a 237feedback resistor. Using lower values
can lead to excessive ringing in the pulse response while a higher value will limit the bandwidth. Application Note
OA-13 SNOA366 discusses this in detail along with the occasions where a different RFmight be advantageous.
HARMONIC DISTORTION
The LMH6702 has been optimized for exceptionally low harmonic distortion while driving very demanding
resistive or capacitive loads. Generally, when used as the input amplifier to very high speed flash ADCs, the
distortions introduced by the converter will dominate over the low LMH6702 distortions. The capacitor CSS,
shown across the supplies in Figure 21 and Figure 22, is critical to achieving the lowest 2nd harmonic distortion.
For absolute minimum distortion levels, it is also advisable to keep the supply decoupling currents (ground
connections to CPOS, and CNEG in Figure 21 and Figure 22) separate from the ground connections to sensitive
input circuitry (such as RG, RT, and RIN ground connections). Splitting the ground plane in this fashion and
separately routing the high frequency current spikes on the decoupling caps back to the power supply (similar to
"Star Connection" layout technique) ensures minimum coupling back to the input circuitry and results in best
harmonic distortion response (especially 2nd order distortion).
8Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMH6702QML
LMH6702
+
-CIN
ADC
RS
110 100
FREQUENCY (MHz)
-90
-80
-70
-60
-50
-40
-30
HD2 (dBc)
AV = +2
RL = 100:
VO = 2VPP
CPOS & CNEG
REMOVED
CPOS & CNEG
INCLUDED
LMH6702QML
www.ti.com
SNOSAQ2E JULY 2005REVISED MARCH 2013
If this lay out technique has not been observed on a particular application board, designer may actually find that
supply decoupling caps could adversely affect HD2 performance by increasing the coupling phenomenon already
mentioned. Figure 23 below shows actual HD2 data on a board where the ground plane is "shared" between the
supply decoupling capacitors and the rest of the circuit. Once these capacitors are removed, the HD2 distortion
levels reduce significantly, especially between 10MHz-20MHz, as shown in Figure 23 below:
Figure 23. Decoupling Current Adverse Effect on a Board with Shared Ground Plane
At these extremely low distortion levels, the high frequency behavior of decoupling capacitors themselves could
be significant. In general, lower value decoupling caps tend to have higher resonance frequencies making them
more effective for higher frequency regions. A particular application board which has been laid out correctly with
ground returns "split" to minimize coupling, would benefit the most by having low value and higher value
capacitors paralleled to take advantage of the effective bandwidth of each and extend low distortion frequency
range.
CAPACITIVE LOAD DRIVE
Figure 24 shows a typical application using the LMH6702 to drive an ADC.
Figure 24. Input Amplifier to ADC
The series resistor, RS, between the amplifier output and the ADC input is critical to achieving best system
performance. This load capacitance, if applied directly to the output pin, can quickly lead to unacceptable levels
of ringing in the pulse response. The plot of "RSand Settling Time vs. CL" in the Typical Performance
Characteristics section is an excellent starting point for selecting RS. The value derived in that plot minimizes the
step settling time into a fixed discrete capacitive load with the output driving a very light resistive load (1k).
Sensitivity to capacitive loading is greatly reduced once the output is loaded more heavily. Therefore, for cases
where the output is heavily loaded, RSvalue may be reduced. The exact value may best be determined
experimentally for these cases.
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: LMH6702QML
LMH6702QML
SNOSAQ2E JULY 2005REVISED MARCH 2013
www.ti.com
In applications where the LMH6702 is replacing the CLC409, care must be taken when the device is lightly
loaded and some capacitance is present at the output. Due to the much higher frequency response of the
LMH6702 compared to the CLC409, there could be increased susceptibility to low value output capacitance
(parasitic or inherent to the board layout or otherwise being part of the output load). As already mentioned, this
susceptibility is most noticeable when the LMH6702's resistive load is light. Parasitic capacitance can be
minimized by careful lay out. Addition of an output snubber R-C network will also help by increasing the high
frequency resistive loading.
Referring back to Figure 24, it must be noted that several additional constraints should be considered in driving
the capacitive input of an ADC. There is an option to increase RS, band-limiting at the ADC input for either noise
or Nyquist band-limiting purposes. Increasing RStoo much, however, can induce an unacceptably large input
glitch due to switching transients coupling through from the "convert" signal. Also, CIN is oftentimes a voltage
dependent capacitance. This input impedance non-linearity will induce distortion terms that will increase as RSis
increased. Only slight adjustments up or down from the recommended RSvalue should therefore be attempted in
optimizing system performance.
DC ACCURACY AND NOISE
Example below shows the output offset computation equation for the non-inverting configuration using the typical
bias current and offset specifications for AV= + 2:
Output Offset : VO= IBN · RIN ± VIO)(1+RF/RG) ± IBI · RF
Where RIN is the equivalent input impedance on the non-inverting input.
Example computation for AV= +2, RF= 237, RIN = 25:
VO= 6μA · 25± 1mV) (1 + 237/237) ± 8μA · 237 = ±4.20mV
A good design, however, should include a worst case calculation using Min/Max numbers in the data sheet
tables, in order to ensure "worst case" operation.
Further improvement in the output offset voltage and drift is possible using the composite amplifiers described in
Application Note OA-7 SNOA365. The two input bias currents are physically unrelated in both magnitude and
polarity for the current feedback topology. It is not possible, therefore, to cancel their effects by matching the
source impedance for the two inputs (as is commonly done for matched input bias current devices).
The total output noise is computed in a similar fashion to the output offset voltage. Using the input noise voltage
and the two input noise currents, the output noise is developed through the same gain equations for each term
but combined as the square root of the sum of squared contributing elements. See Application Note OA-12
SNOA375 for a full discussion of noise calculations for current feedback amplifiers.
PRINTED CIRCUIT LAYOUT
Generally, a good high frequency layout will keep power supply and ground traces away from the inverting input
and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15 SNOA367 for more information). Texas Instruments
suggests the following evaluation boards as a guide for high frequency layout and as an aid in device testing and
characterization:
Device Package Evaluation Board Part Number
LMH6702QMLMF SOT-23-5 CLC730216
LMH6702QMLMA Plastic SOIC CLC730227
10 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LMH6702QML
LMH6702QML
www.ti.com
SNOSAQ2E JULY 2005REVISED MARCH 2013
Table 1. Revision History
Date Revision Section Originator Changes
Released
07/12/05 A New Corporate format Release R. Malone 1 MDS data sheet converted in corporate data
sheet format. Added reference to QMLV
products and Drift Table. MDS MNLMH6702–X,
Rev. 1A0 will be archived.
09/28/05 B Features, Ordering Information Table R. Malone Added radiation reference to Features, Rad
and Notes NSID & SMD to Ordering Table and Note 5 to
AC & DC Electrical tables. Note to note section.
11/07/05 C Update AC electrical's and Notes R. Malone Added note to AC electrical's and note section.
LMH6702QML Revision B data sheet will be
archived.
07/26/2011 D Update Features, Ordering Information Larry M. Added 'High Dose Rate' 300 krad(Si) and
and Footnotes ELDRS Free 300 krad(Si). Deleted NS Part
numbers LMH6702J-QML and LMH6702WG-
QML. Added NS Part number
LMH6702WGFLQMLV.Modified note.
LMH6702QML Revision C data sheet will be
archived.
10/05/2011 E Update Ordering Information, and Kirby K.. Added NS Part number LMH6702JFLQMLV
Footnotes 300 krad(Si) .Modified note and note. Revision
D data sheet will be archived.
03/18/2013 E All - Changed layout of National Data Sheet to TI
format
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Links: LMH6702QML
PACKAGE OPTION ADDENDUM
www.ti.com 11-Apr-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
5962-0254601VPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LMH6702J-QV
5962-02546
01VPA Q ACO
01VPA Q >T
5962-0254601VZA ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LMH6702
WGQMLV Q
5962-04203
01VZA ACO
01VZA >T
5962F0254601VPA ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LMH6702JFQV
5962F02546
01VPA Q ACO
01VPA Q >T
5962F0254601VZA ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LMH6702
WGFQMLV Q
5962F02546
01VZA ACO
01VZA >T
LMH6702J-QMLV ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LMH6702J-QV
5962-02546
01VPA Q ACO
01VPA Q >T
LMH6702JFQMLV ACTIVE CDIP NAB 8 40 TBD Call TI Call TI -55 to 125 LMH6702JFQV
5962F02546
01VPA Q ACO
01VPA Q >T
LMH6702WG-QMLV ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LMH6702
WGQMLV Q
5962-04203
01VZA ACO
01VZA >T
LMH6702WGFQMLV ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LMH6702
WGFQMLV Q
5962F02546
01VZA ACO
01VZA >T
PACKAGE OPTION ADDENDUM
www.ti.com 11-Apr-2013
Addendum-Page 2
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LMH6702QML, LMH6702QML-SP :
Catalog: LMH6702QML
Space: LMH6702QML-SP
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
MECHANICAL DATA
NAB0008A
www.ti.com
J08A (Rev M)
MECHANICAL DATA
NAC0010A
www.ti.com
WG10A (Rev H)
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2013, Texas Instruments Incorporated