1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5550S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
DIM MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜)
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
·High Collector Breakdwon Voltage
: VCBO=160V, VCEO=140V
·Low Leakage Current.
: ICBO=100nA(Max.) VCB=100V
·Low Saturation Voltage
: VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA
·Low Noise : NF=10dB (Max.)
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 140 V
Emitter-Base Voltage VEBO 6V
Collector Current IC600 mA
Base Current IB100 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Type Name
Marking
Lot No.
ZP
1999. 11. 30 2/2Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
2N5550S
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO
VCB=100V, IE=0 - - 100 nA
VCB=100V, IE=0, Ta=100℃- - 100 μA
Emitter Cut-off Current IEBO VEB=4V, IC=0 --50nA
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 160 - - V
Collector-Emitter *
Breakdown Voltage V(BR)CEO IC=1mA, IB=0 140 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 6--V
DC Current Gain *
hFE(1) VCE=5V, IC=1mA 60 - -
hFE(2) VCE=5V, IC=10mA 60 - 250
hFE(3) VCE=5V, IC=50mA 20 - -
Collector-Emitter *
Saturation Voltage
VCE(sat)1I
C=10mA, IB=1mA - - 0.15
V
VCE(sat)2I
C=50mA, IB=5mA - - 0.25
Base-Emitter *
Saturation Voltage
VBE(sat)1I
C=10mA, IB=1mA - - 1.0
V
VBE(sat)2I
C=50mA, IB=5mA - - 1.2
Transition Frequency fTVCE=10V, IC=10mA, f=100MHz 100 - 300 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz -- 6pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz --30pF
Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200
Noise Figure NF VCE=5V, IC=250μA
Rg=1kΩ, f=10Hz～15.7kHz --10dB
