SIEMENS BCR 141 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ry=22kQ, Ro=22kQ) VPSOS161 Type Marking |Ordering Code (Pin Configuration Package BCR 141 WDs_ _|Q62702-C2258 [1=-B [2-E ([3=Cc [sor-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEo 50 Vv Collector-base voltage VcBo 50 Emitter-base voltage VeBO 10 Input on Voltage Vion) 30 DC collector current Ie 100 mA Total power dissipation, Ts = 102C Prot 200 mw Junction temperature qj 150 C Storage temperature Tetg - 65... + 150 Thermal Resistance Junction ambient =) Rina $350 KAV Junction - soldering point Rings < 240 1) Package mounted on peb 40mm x 40mm x 1.5mm / 6em? Cu Semiconductor Group 635 11.96SIEMENS BCR 141 Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage ViBR)CEO Vv Ic = 100 LA, fp =0 50 - - Collector-base breakdown voltage ViprycBo Ic = 100 LA, Ip =O 50 - - Collector cutoff current IcBo nA Vop = 40 V, Ie =0 - - 100 Emitter cutoff current lEBo LA Vep = 10V, lo =0 - - 350 DC current gain AFE - Ilc=5mMA, Voce =5V 50 - - Collector-emitter saturation voltage 1) VoEsat Vv lo = 10 mA, Ip = 0.5 MA - - 0.3 Input off voltage Vicotty Io = 100 pA, Veg =5V 0.8 . 1.5 Input on Voltage Vion) Io =2MA, Vop = 0.3V 1 - 2.5 Input resistor Ry 15 22 29 kQ Resistor ratio Ay/Ro 0.9 1 1.4 - AC Characteristics Transition frequency fr MHz Io = 10 MA, Veg = 5 V, f= 100 MHz - 130 - Collector-base capacitance Cob pF Vog = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300us; D < 2% Semiconductor Group 636 11.96SIEMENS BOR 141 DC Current Gain hee = f (Ic) Collector-Emitter Saturation Voltage Voge = 5V (common emitter configuration) Voesat = A/c), Mee = 20 103 = 101 10L.... a 10 10 10 mA 0.0 02 0.4 06 Vv 1.0 Vesa Input on Voltage Vion) = A/c) Input off voltage Vio) = Aic) Voce = 0.3V (common emitter configuration) Voe = 5V (common emitter configuration) Vien Vion Semiconductor Group 637 11.96SIEMENS BCR 141 Total power dissipation P,., = f (Ta*; 7s) * Package mounted on epoxy t = | 150 i \ \ \\ 100 \ 1 . \ 0 L o 20 40 60 BO 100 120 C 150 T,,7; Permissible Pulse Load Ainys = ftp) Semiconductor Group ia a CT ct i wn Hero | Permissible Pulse Load Piotmax / Ptotoc = Alp) cy hi, LS 10 10 s 10 638 11.96