KE C SEMICONDUCTOR BC817 KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Complementary to BC807. DIM| MILLIMETERS A 2.93+0.20 B 1.30+0.20/-0.15 c 1.30 MAX < _ % D 0.45+0.15/-0.05 MAXIMUM RATINGS (Ta=25T) : aps0a1/=025 G 1.90 CHARACTERISTIC SYMBOL] RATING | UNIT H 0.95 J 0.13+0.10/-0.05 Collector-Base Voltage Vono 50 Vv ee ah M 0.20 MIN Collector-Emitter Voltage Vero 45 V 1 N :oo+a20/-010 { 4 Emitter-Base Voltage Vexo 5 Vv Py LT Collector Current Ic 500 mA 1. EMITTER Base Current Ip 100 mA 2. BASE 3. COLLECTOR Collector Power Dissipation Pe 150 mW Junction Temperature Tj 150 Cc SOT 23 Storage Temperature Range Tag 55~150) ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Iczo Vcp=20V, [e=0 - - 0.1 BA Emitter Cut-off Current Teo Vep=oV, Ic=0 - - 0.1 BA hrr(1) Vcr=lV, Tc=100mA 100 _ 400 DC Current Gain (Note) hye(2) Ver=lV, Ic=500mA AO - - Collector-Emitter Verma | 1c=500mA, Ip=50mA - - 0.7 Vv Saturation Voltage Base-Emitter Voltage Vee Ven=1V, Ic=500mA - - 1.2 Vv Transition Frequency fr Vcr=5V, Ic=l0mA 100 - - MHz Collector Output Capacitance Cob Vcp=l0V, Ie=0, f=1MHz - 5 - pF (Note) : hre(1) Classification 16:100~250 , 25:160~400 MARK SPEC Marking = Lot No. TYPE BC817-16 BC817-25 MARK 6A 6B Type Name ae ts 1998. 12. 14 Revision No : 0 KEC 1/2BC817 200 150 100 50 DC CURRENT GAIN hrer COLLECTOR-EMITTER SATURATION VOLTAGE VcR(sat) (V) hre Ic COMMON EMITTER VCR=1V Ta=25'C 4. 10 10 10 10 COLLECTOR CURRENT Ic (mA) Vcx(sat) Ic COMMON EMITTER I/Ip=10 10 100 10000 COLLECTOR CURRENT Ic (mA) 1000 Ic Vee oO Oo o COMMON EMITTER Vcr =1V aN So So oo So o COLLECTOR CURRENT Ic (mA) 06 07 08 09 1.0 BASE-EMITTER VOLTAGE Vpg (V) Pc Ta 200 150 (mW) 100 Pc 50 COLLECTOR POWER DISSIPATION 0 2 50 5 AMBIENT TEMPERATURE Ta 100 125 150 175 (C) 1998. 12. 14 Revision No : 0 KEC 2/2