PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 40 Volt VCEO
* Gain of 50 at IC = 1 Amp
*P
tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6726 2N6727 UNIT
Collector-Base Voltage VCBO -40 -50 V
Collector-Emitter Voltage VCEO -30 -40 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6726 2N6727 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -40 -50 V IC
=-1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30 -40 V IC
=-10mA, IB
=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 -5 V IE=-1mA, IC=0
Collector Cut-Off
Current
ICBO -0.1
-0.1 µA
µA
VCB=-40V, IE=0
VCB=-50V, IE=0
Emitter Cut-Off
Current
IEBO -0.1 -0.1 µAVEB
=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) -0.5 -0.5 V IC
=-1A, IB
=-100mA*
Base-Emitter Turn-On
Voltage
VBE(on) -1.2 -1.2 V IC=-1A, VCE=-1V*
Static Forward
Current Transfer Ratio
hFE 55
60
50 250
55
60
50 250
IC
=-10mA, VCE=-1V*
IC
=-100mA, VCE=-1V*
IC
=-1A, VCE=-1V*
Transition
Frequency
fT50 500 50 500 MHz IC
=-50mA, VCE=-10V
Collector Base
Capacitance
CCB 30 30 pF VCE=-10V, f=1MHz
E-Line
TO92 Compatible
2N6726
2N6727
3-8
C
B
E
Not Recommended for New Design
Please Use ZTX549 / ZTX751
