TLLG / R / Y440. VISHAY Vishay Semiconductors Low Current LED in 3 mm Tinted Diffused Package Features * * * * * * * Low power consumption High brightness CMOS/MOS compatible Specified at IF = 2 mA Luminous intensity categorized Yellow and green color categorized Lead-free device 94 8488 Applications Low power DC circuits Parts Table Part Color, Luminous Intensity Angle of Half Intensity () Technology TLLR4400 Red, IV > 0.63 mcd TLLR4401 Red, IV > 1 mcd 25 GaAsP on GaP TLLY4400 Yellow, IV > 0.63 mcd 25 GaAsP on GaP TLLY4401 Yellow, IV > 1 mcd 25 GaAsP on GaP TLLG4400 Green, IV > 0.63 mcd 25 GaP on GaP TLLG4401 Green, IV > 1 mcd 25 GaP on GaP 25 GaAsP on GaP Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLL.440. Symbol Value Reverse voltage Parameter Test condition VR 6 V DC Forward current IF 7 mA IFSM 0.15 A PV 20 mW Tj 100 C Operating temperature range Tamb - 40 to + 100 C Storage temperature range Tstg - 55 to + 100 C Tsd 260 C RthJA 800 K/W Surge forward current tp 10 s Power dissipation Tamb 84 C Junction temperature Soldering temperature Thermal resistance junction/ ambient Document Number 83029 Rev. 1.2, 23-Jul-04 t 5 s, 2 mm from body Unit www.vishay.com 1 TLLG / R / Y440. VISHAY Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Red TLLR440. Parameter Luminous intensity 1) Test condition IF = 2 mA Part Symbol Min Typ. TLLR4400 IV 0.63 1.2 2 IV 1 Dominant wavelength IF = 2 mA d 612 Peak wavelength IF = 2 mA p 635 TLLR4401 mcd IF = 2 mA 25 Forward voltage IF = 2 mA VF 1.9 Reverse voltage IR = 10 A VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Unit mcd 625 Angle of half intensity 6 Max nm nm deg 2.4 V 20 V 50 pF in one Packing Unit IVmin/IVmax 0.5 Yellow TLLY440. Parameter Luminous intensity 1) Test condition IF = 2 mA Part Symbol Min Typ. TLLY4400 IV 0.63 1.2 2 Max Unit mcd IV 1 Dominant wavelength IF = 2 mA d 581 Peak wavelength IF = 2 mA p 585 nm Angle of half intensity IF = 2 mA 25 deg Forward voltage IF = 2 mA VF 2.4 Reverse voltage IR = 10 A VR Junction capacitance VR = 0, f = 1 MHz Cj TLLY4401 1) 6 mcd 594 2.9 nm V 20 V 50 pF in one Packing Unit IVmin/IVmax 0.5 Green TLLG440. Parameter Luminous intensity 1) Test condition IF = 2 mA Part Symbol Min Typ. TLLG4400 IV 0.63 1.2 Max mcd Unit TLLG4401 IV 1 2 mcd 562 Dominant wavelength IF = 2 mA d Peak wavelength IF = 2 mA p 565 nm Angle of half intensity IF = 2 mA 25 deg Forward voltage IF = 2 mA VF Reverse voltage IR = 10 A VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 1.9 6 2.4 nm V 20 V 50 pF in one Packing Unit IVmin/IVmax 0.5 www.vishay.com 2 575 Document Number 83029 Rev. 1.2, 23-Jul-04 TLLG / R / Y440. VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 100 I F - Forward Current ( mA ) PV - Power Dissipation ( mW ) 25 20 15 10 5 0 Red 10 1 0.1 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10048 0 8 6 4 2 2 3 4 5 V F - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage I vrel - Relative Luminous Intensity 10 I F - Forward Current ( mA ) 1 95 10050 Figure 1. Power Dissipation vs. Ambient Temperature 0 2.0 Red 1.6 1.2 0.8 0.4 I F = 2 mA 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature 0 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 0.4 0.2 0 0.2 0.4 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Rev. 1.2, 23-Jul-04 20 40 60 80 100 T amb - Ambient Temperature ( C ) Figure 5. Rel. Luminous Intensity vs. Ambient Temperature 2.4 Red 2.0 1.6 1.2 0.8 0.4 0 0.6 95 10060 Document Number 83029 0 95 10051 I v rel - Relative Luminous Intensity 0 95 10049 I v rel - Relative Luminous Intensity t p /T= 0.001 tp = 10 s 96 11490 10 20 50 1 0.5 0.2 100 0.1 200 500 I F (mA) 0.05 0.02 t p /T Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle www.vishay.com 3 TLLG / R / Y440. VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity I V re l - Relative Luminous Intensity 100 Red 10 1 0.1 1 10 0.8 0.4 I v rel - Relative Luminous Intensity Red 1.0 0.8 0.6 0.4 0.2 630 650 670 60 80 100 Yellow 2.0 1.6 1.2 0.8 0.4 10 20 50 1 0.5 0.2 96 11590 Figure 8. Relative Intensity vs. Wavelength 40 2.4 690 -i Wavelength ( nm ) 95 10040 20 Tamb - Ambient Temperature ( C ) 0 610 0 Figure 10. Rel. Luminous Intensity vs. Ambient Temperature 1.2 I V re l - Relative Luminous Intensity 1.2 95 10054 Figure 7. Relative Luminous Intensity vs. Forward Current 100 0.1 200 500 I F (mA) 0.05 0.02 t p /T Figure 11. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 100 100 I V re l - Relative Luminous Intensity IF - Forward Current ( mA) 1.6 100 I F - Forward Current ( mA ) 95 10061 Yellow 10 1 tp/T=0.001 tp=10s 0.1 0 1 2 3 4 5 V F - Forward Voltage ( V ) 95 10053 Figure 9. Forward Current vs. Forward Voltage www.vishay.com 4 Yellow 0 0.01 0.1 0 590 2.0 Yellow 10 1 0.1 0.01 0.1 95 10062 1 10 100 I F - Forward Current ( mA ) Figure 12. Relative Luminous Intensity vs. Forward Current Document Number 83029 Rev. 1.2, 23-Jul-04 TLLG / R / Y440. VISHAY Vishay Semiconductors 2.4 Iv rel - Relative Luminous Intensity IVrel - Relative Luminous Intensity 1.2 Yellow 1.0 0.8 0.6 0.4 0.2 0 550 590 610 630 Green 10 1 tp/T=0.001 tp=10 s 0.1 0 1 2 3 4 10 20 50 1 0.5 0.2 200 500 IF(mA) 0.05 0.02 tp/T Green 10 1 0.1 1 100 10 I F - Forward Current ( mA ) 95 10059 Figure 14. Forward Current vs. Forward Voltage 100 0.1 100 0.01 0.1 5 V F - Forward Voltage ( V ) 95 10056 Figure 17. Relative Luminous Intensity vs. Forward Current 1.2 Green IVrel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 0.4 Figure 16. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Iv rel - Relative Luminous Intensity IF - Forward Current ( mA) 100 1.2 0.8 0.4 95 10057 0.8 96 11591 Figure 13. Relative Intensity vs. Wavelength I F=2mA 0 1.2 650 - Wavelength ( nm ) 0 1.6 0 570 95 10039 1.6 Green 2.0 20 40 60 80 100 Tamb - Ambient Temperature (C ) Figure 15. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83029 Rev. 1.2, 23-Jul-04 Green 1.0 0.8 0.6 0.4 0.2 0 520 95 10038 540 560 580 600 620 - Wavelength ( nm ) Figure 18. Relative Intensity vs. Wavelength www.vishay.com 5 TLLG / R / Y440. VISHAY Vishay Semiconductors Package Dimensions in mm 95 10913 www.vishay.com 6 Document Number 83029 Rev. 1.2, 23-Jul-04 TLLG / R / Y440. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83029 Rev. 1.2, 23-Jul-04 www.vishay.com 7