Electrical Characteristics: (TA = +25WC unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = −1.0mA, VDS = 0 −30 − − V
Gate Reverse Current IGSS VGS = −20V, VDS = 0 − − −1.0 nA
Gate 1 Leakage Current IG1SS VG1S = −20V, VDS = 0, TA = +100WC− − −0.5 mA
Gate−Source Cutoff Voltage VGS(off) VDS = 15V, ID = 10mA −1.0 − −6.0 V
ON Characteristics
Zero−Gate Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 5.0 −15 mA
Small−Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 4500 −7500 mmhos
Input Admittance Re(yis) 100MHz VDS = 15V, VGS = 0 − − 100 mmhos
400MHz − − 1000 mmhos
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz − − 50 mmhos
Output Conductance Re(yos) 100MHz VDS = 15V, VGS = 0 − − 75 mmhos
400MHz − − 100 mmhos
Forward Transconductance Re(yfs) VDS = 15V, VGS = 0, f = 400MHz 4000 − − mmhos
Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1.0MHz − − 4.5 pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1.0MHz − − 1.0 pF
Input Susceptance IM(Yis) 100MHz VDS = 15V, VGS = 0 − − 3.0 mmho
400MHz − − 12.0 mmho
Functional Characteristics
Noise Figure NF 100MHz VDS = 15V, ID = 5mA,
RiG = 1kW
− − 2.0 dB
400MHz − − 4.0 dB
Common Source Power Gain Gps 100MHz VDS = 15V, ID = 5mA,
RiG = 1kW
18 − − dB
400MHz 10 − − dB
Output Susceptance IM(Yos) 100MHz VDS = 15V, VGS = 0 − − 1000 mmhos
400MHz − − 4000 mmhos
Note 1. tp = 100ms, Duty Cycle = 10%.