BAR89... Silicon PIN Diode * Optimized for antenna switches in hand held applications * Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) * Low forward resistance (typ. 0.8 @ IF = 10mA) * Very low signal distortion * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 BAR89-02LRH Type BAR89-02LRH Package TSLP-2-7 Configuration single, leadless LS(nH) 0.4 Marking R Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 80 V Forward current IF 100 mA Total power dissipation Ptot 250 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Value Unit Ts 133C Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value Unit 65 K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAR89... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 80 - - V - - 50 nA DC Characteristics Breakdown voltage V(BR) I(BR) = 5 A Reverse current IR VR = 60 V Forward voltage V VF IF = 10 mA - 0.83 0.9 IF = 100 mA - 0.95 1.1 2 2007-04-19 BAR89... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.25 0.35 VR = 0 V, f = 100 MHz - 0.25 - VR = 0 V, f = 1 GHz - 0.19 - VR = 0 V, f = 1.8 GHz - 0.18 - Reverse parallel resistance k RP VR = 0 V, f = 100 MHz - 35 - VR = 0 V, f = 1 GHz - 5 - VR = 0 V, f = 1.8 GHz - 3.5 - Forward resistance rf I F = 1 mA, f = 100 MHz - 3 - I F = 5 mA, f = 100 MHz - 1.2 - I F = 10 mA, f = 100 MHz - 0.8 1.5 rr - 800 - ns I-region width WI - 19 - m Insertion loss1) IL Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 dB I F = 1 mA, f = 1.8 GHz - 0.23 - I F = 5 mA, f = 1.8 GHz - 0.1 - I F = 10 mA, f = 1.8 GHz - 0.08 - VR = 0 V, f = 0.9 GHz - 19 - VR = 0 V, f = 1.8 GHz - 14 - VR = 0 V, f = 2.45 GHz - 11 - Isolation1) 1BAR89-02LRH ISO in series configuration, Z = 50 3 2007-04-19 BAR89... Diode capacitance CT = (VR) f = Parameter Reverse parallel resistance RP = (V R) f = Parameter 10 3 0.5 KOhm pF 10 2 1 MHz 100 MHz 1 GHz 1.8 GHz 0.35 Rp CT 0.4 10 1 0.3 0.25 100 MHz 1 GHz 1.8 GHz 10 0 0.2 0.15 0.1 0 2 4 6 8 10 12 14 V 16 10 -1 0 20 2 4 6 8 10 12 14 16 VR Forward resistance rf = (IF ) f = 100MHz 20 Forward current IF = (VF) TA = Parameter 10 3 0 10 A Ohm 10 -1 10 -2 10 2 IF rf 10 -3 10 V VR -40C +25C +85C +125C 10 -4 1 10 -5 10 -6 10 0 10 -7 10 -8 10 -1 -2 10 10 -1 10 0 10 1 10 2 mA 10 10 -9 0 3 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 2007-04-19 BAR89... Forward current IF = (T S) Permissible Puls Load R thJS = (tp) BAR89-02LRH BAR89-02LRH 10 2 120 mA mA 100 RthJS 90 IF 80 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 70 60 50 10 0 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 C TS 10 0 tp Permissible Pulse Load Insertion loss IL = -|S21| 2 = (f) IFmax / I FDC = (tp ) IF = Parameter BAR89-02LRH BAR89-02LRH in series configuration, Z = 50 10 2 0 dB mA IF |S21| -0.1 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 -0.15 10mA 5mA 1mA -0.2 -0.25 -0.3 -0.35 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 C 10 -0.4 0 1 tp 1 2 3 4 GHz 6 f 5 2007-04-19 BAR89... Isolation ISO = -|S21|2 = (f) VR = Parameter BAR89-02LRH in series configuration, Z = 50 0 |S 21| dB -10 -15 0V 1V 10 V -20 -25 -30 0 1 2 3 4 GHz 6 f 6 2007-04-19 Package TSLP-2-7 BAR89... Package Outline Top view Bottom view 0.39 +0.01 -0.03 0.6 0.05 0.05 MAX. 1 1 0.25 0.035 1) 2 10.05 0.65 0.05 2 0.5 0.035 1) Cathode marking 1) Dimension applies to plated terminal Foot Print 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.35 0.6 0.275 For board assembly information please refer to Infineon website "Packages" Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel Reel o330 mm = 50.000 Pieces/Reel (optional) 0.5 Cathode marking 8 1.16 4 0.76 7 2007-04-19 BAR89... Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-19