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BAR89...
Silicon PIN Diode
• Optimized for antenna switches
in hand held applications
• Very low capacitance at zero volts reverse bias
at frequencies above 1GHz (typ. 0.19 pF)
• Low forward resistance (typ. 0.8Ω @ IF = 10mA)
• Very low signal distortion
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAR89-02LRH
Type Package Configuration L
S
(nH) Marking
BAR89-02LRH TSLP-2-7 single, leadless 0.4 R
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR80 V
Forward current IF100 mA
Total power dissipation
Ts ≤ 133°C Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tstg -55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 65 K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA V(BR) 80 - - V
Reverse current
VR = 60 V IR- - 50 nA
Forward voltage
IF = 10 mA
IF = 100 mA
VF
-
-
0.83
0.95
0.9
1.1
V
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT
-
-
-
-
0.25
0.25
0.19
0.18
0.35
-
-
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
35
5
3.5
-
-
-
kΩ
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
-
3
1.2
0.8
-
-
1.5
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 800 - ns
I-region width WI- 19 - µm
Insertion loss1)
IF = 1 mA, f = 1.8 GHz
IF = 5 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.23
0.1
0.08
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
ISO
-
-
-
19
14
11
-
-
-
1BAR89-02LRH in series configuration, Z = 50Ω
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Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2 10 3
mA
IF
-1
10
0
10
1
10
2
10
3
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40°C
+25°C
+85°C
+125°C
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BAR89...
Forward current IF = ƒ (TS)
BAR89-02LRH
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Permissible Puls Load RthJS = ƒ (tp)
BAR89-02LRH
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
-1
10
0
10
1
10
2
10
mA
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR89-02LRH
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
°C
tp
0
10
1
10
2
10
mA
IF
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Insertion loss IL = -|S21|2 = ƒ(f)
IF = Parameter
BAR89-02LRH in series configuration, Z = 50Ω
01234GHz 6
f
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
dB
0
|S21|
10mA
5mA
1mA
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Isolation ISO = -|S21|2 = ƒ(f)
VR = Parameter
BAR89-02LRH in series configuration, Z = 50Ω
01234GHz 6
f
-30
-25
-20
-15
-10
dB
0
|S21|
0 V
1 V
10 V
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BAR89...
Package TSLP-2-7
1
2
±0.05
0.6
1
2
±0.05
0.65
±0.035
0.25 1)
1±0.05
0.05 MAX.
+0.01
0.39-0.03
1) Dimension applies to plated terminal
Cathode
marking
1)
±0.035
0.5
Bottom viewTop view
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
For board assembly information please refer to Infineon website "Packages"
0.45
0.275 0.275
0.375
0.925
Copper Solder mask Stencil apertures
0.35
1
0.6
0.35
0.3
0.76
4
1.16
0.5
Cathode
marking
8
BAR90-02LRH
Type code
Cathode marking
Laser marking
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BAR89...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
