= - a SAMSUNG SEMICONDUCTOR INC LYE D prsesiaa 0007694 3 I MJE210 PNP EPITAXIAL SILICON TRANSISTOR T- 73-7 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER 10-126 SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH . PRODUCT-MIN .fT=65MHz @ lc=100mMA Complementary to MJE200 ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol Rating Unit Collector-Base Voltage Ves0 -40 Vv Collector-Emitter Voltage Vceo " -25 Vv Emitter-Base Voltage Veso -8 th OV Collector Current dc -5 A Collector Dissipation Pe 15 Ww 1. Emitter 2. Collector 3. Base Junction Tamperature. Tj - 150 C Storage Temperature Tstg ~-65~150 C ELECTRICAL CHARACTERISTICS (T,=25C) _ Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustaining Voltage Veeo(sus) | Ic=10mA, ip=O 26 Vv Collector Cutoff Current logo Vca=40V, le=O -100 nA 2 . Vea=40V, I=, T= 126C -100 | pA Emitter Cutoff Current leno Vae=8V, le=0 -100 nA DC Current Gain bre ~ | Vce=1V, lb=-500mA 70 : . Vee==1V, le=-3A 45; - 180 Vee=2V, lc=5A , 10 Collector-Emitter Saturation Voltage | Vee(sat) =600mA, lb=50mA -0.3 Vv lk=2A, lp=200MA 0.75 Vv . . . Ic=5A, la=1A - 718] ov Base-Emitter Saturation Voltage Vae(sat) Ib=5A, b=-1A - -2.5 Vv Base Emitter On Voltage . Vee(on) Vee=-1V, ib-=-2A . ~-1.6 Vv Current Gain-Bandwidth Product f; Vce=10V, lk=100MA . . a f=41OMHz a 65] MHz Output Capacitance . Cob Vea=~-10V, le=0, f=0.1MHz 120 pF cs SAMSUNG SEMICONDUCTOR 273SAMSUNG SEMICONDUCTOR INC ~ MJE210 AWE Oo Bf ecesrue 0007499. J PNP EPITAXIAL SILICON TRANSISTOR POWER DERATING z 2 a g 6 % ui z o a Z 26 50 75 100 426 450 475 2p0 Te{*C), CASE TEMPERATURE COLLECTOR OUTPUT CAPACITANCE - - 1000 r t=O) MHz 500 200 us 9 . 100 x G6 50 < a o 2 1 0.1 -0. - -10 -20 Ves(}, COLLECTOR-BASE VOLTAGE 12-05 -1 -2 50 COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE : ~10 7 -5 2 * Veaieat),Vca(sathV), SATURATION VOLTAGE -10 =0.02 -0.05 -0.1 -0.2 -06 -1 -2 -5 4ic{A), COLLECTOR CURRENT -100 Me fe, OC CURRENT GAIN 1033-17 FORWARD BIAS SAFE OPERATING AREA ; RENT FS o ' I a H(A), COLLECTOR CUR a ft 8 tor es -~ N 1 2 - 10 -20 0 Vee(), COLLECTOR-EMITTER VOLTAGE -100 OC CURRENT GAIN 8 8 8 +0.01 -0,02 -0.05 -0.1 -0.2 -0.5 -1 ~2 be{A), COLLECTOR CURRENT -5 ,-10 cee SAMSUNG SEMICONDUCTOR 274|SAMSUNG SEMICONDUCTOR INC LYE D Bp tsesee goo?700 3 i MJE340 | NPN EPITAXIAL SILICON TRANSISTOR . T-I3~-oF - HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE TO-126. HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350 ABSOLUTE MAXIMUM RATINGS (Ta =25C) Characteristic Symboi Rating Unit Collector-Base Voltage Veao 300 Vv Collector-Emitter Voltage Vero 300" fe Vv Emitter-Base Voltage Vewo 5 Vv Collector Current Io 500 mA 1. Emitter 2, Collector 3 Base Collector Dissipation Pe . 20 Ww Junction Temperature Tj 150. - C Storage Temperature Tstg ~65~150 C ) ELECTRICAL CHARACTERISTICS (T, =25C) Characterlstic Symbol . Test Condition . Min Max Unit Collector Emitter Sustaining Voltage Veeo(sus) lk=1mA, fp=0 300 Vv Collector Cutoff Current __ | beeo Veca=300V, k=O .. 100 pA Emitter Cutoff Current tepo Vee=3V, ic=0 . 100 HA DC Current Gain fre Voce=10V, kk=SOmA 30 240 cbs SAMSUNG SEMICONDUCTOR (278.SAMSUNG SEMICONDUCTOR INC Lue D B esesaue 0007701 T i MJE340 , NPN EPITAXIAL SILICON TRANSISTOR 733,097 POWER DERATING COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE 10 = oo PL(W), POWER DISSIPATION 2 - Vaa(sat},Vce(satKV), SATURATION VOLTAGE 2 a 25 60 7s 300 125 150 #175 6200 . 10 20 50 100 = 200 500 1000 + Tef{"C}), CASE TEMPERATURE ' Mee IefmA}, COLLEGTOR CURRENT DC CURRENT GAIN FORWARD 8IAS SAFE OPERATING AREA Os oz }, COLLECTOR CURRENT oF fee, DC CURRENT GAIN L(A 2 8 0.02 G.01 2 5 "10 20 50 100 200 s00 1000 wt 2 6 10 20 60 100 200 4{mA}, COLLECTOR CURRENT Ves{), COLLECTOR-EMITTER VOLTAGE G samsunc SEMICONDUCTOR oO 276:SAMSUNG SEMICONDUCTOR INC LYE D Bp raesaue g00??0e2 1 i MJE350 PNP EPITAXIAL SILICON TRANSIST OR | T~ 33-9 HIGH COLLECTOR-EMITIER r~ SUSTAINING VOLTAGE 10-126 HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE340 ABSOLUTE MAXIMUM RATINGS (Ta =25C} Characteristic : Symboi Rating Unit Collector-Base Voltage Vepo -300 ~ Vv Collector-Emitter Voltage Veeo 300 Vv Emitter-Base Voltage Veno -5 Vv Collector Current le -500 mA Collector Dissipation Po 20 4 Ww Junction Temperature Tj 150 C . Storage Temperature - | Tstg 65~150 C 1, Emitter 2. Coector 3, Bage. ELECTRICAL CHARACTERISTICS (Ta=25C) i Characteristic Symbol Test Condition Min Max Unit : Collector Emitter Sustaining Voltage Vceo(sus) =~1mMA, la=0 300 Vv j Collector Cutoff Current : leso Vea= 300V, =O -100 | pA Emitter Cutoff Current leo Vee= 3V, lb=0 -100 pA DO Current Gain Nee Vee=10V, lc=50mA 30 240 ce SAMSUNG SEMICONDUCTOR 277"SAMSUNG SEMICONDUCTOR INC WWE D Bf tscu1se g007?03 3 i MJE350 . _ PNP EPITAXIAL SILICON TRANSISTOR a ~T-33-19 COLLECTOR-EMITTER SA VOLTAGE BASE-EMITTER SA AGE 0 . SAFE OPERATING AREA 10000 -1 5000 -5 . iy q 2000 yu o-2 Q i 1000 z 4 - Z 7 & ~s00 =z -05 E 5 - -200 2 0.2 3 g ~100 07 z 2 . & -50 3 70.05 3 i 20 > -0,02 ~ ~0.01 +10 -20 -0 -100 -200 500 - 1000-2000 - 4000 -1 = -2 ~6 -10 -20 -60 -100-200 .-500-1000 VestV, COLLECTOR-EMITTER VOLTAGE 5 Se k{mA}, COLLECTOR CURRENT OC CURRENT GAIN ~ POWER DERATING g 8 8 o 3 Poi), POWER DISSIPATION hee, DC CURRENT GAIN o n 1 1 -2 - -10 -20 ~S0 100 -200 ~500 - . 0 25 50 75 125 150 175 200 225 250 k{mA}, COLLECTOR CURRENT To(C}, CASE TEMPERATURE oH SAMSUNG SEMICONDUCTOR 278