BBY65... Silicon Tuning Diode * High Q hyperabrupt tuning diode * Very low capacitance spread * Designed for low tuning voltage operation for VCO's in mobile communications equipment * For low frequency control elements such as TCXOS and VCXOS * High capacitance ratio and good C-V linearity * Pb-free (RoHS compliant) package BBY65-02V Type BBY65-02V Package SC79 Configuration single LS(nH) 0.6 Marking F Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 15 V Forward current IF 50 mA Operating temperature range Top -55 ... 150 C Storage temperature Tstg -55 ... 150 1 Value Unit 2011-06-15 BBY65... Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 10 V - - 10 VR = 10 V, TA = 85 C - - 100 AC Characteristics Diode capacitance pF CT VR = 0.3 V, f = 1 MHz 28.2 29.5 30.8 VR = 1 V, f = 1 MHz - 20.25 - VR = 2 V, f = 1 MHz - 9.8 - VR = 3 V, f = 1 MHz - 4.45 - 2.6 2.7 2.8 10 10.9 - pF VR = 4.7 V, f = 1 MHz Capacitance ratio CT0.3/ VR = 0.3 V, VR = 4.7 V CT4.7 Capacitance ratio CT1/C T3 - 4.55 - pF rS - 0.6 0.9 VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz 2 2011-06-15 BBY65... Diode capacitance CT = (VR) f = 1MHz 40 pf CT 30 25 20 15 10 5 0 0 1 2 3 5 V VR 3 2011-06-15 Package SC79 4 BBY65... 2011-06-15 BBY65... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 5 2011-06-15 BBY65... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-06-15