2011-06-15
1
BBY65...
Silicon Tuning Diode
• High Q hyperabrupt tuning diode
• Very low capacitance spread
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For low frequency control elements
such as TCXOS and VCXOS
• High capacitance ratio and good C-V linearity
• Pb-free (RoHS compliant) package
BBY65-02V
Type Package Configuration LS(nH) Marking
BBY65-02V SC79 single 0.6 F
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR15 V
Forward current IF50 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tst
g
-55 ... 150
2011-06-15
2
BBY65...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 10 V
VR = 10 V, TA = 85 °C
IR
-
-
-
-
10
100
nA
AC Characteristics
Diode capacitance
VR = 0.3 V, f = 1 MHz
VR = 1 V, f = 1 MHz
VR = 2 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 4.7 V, f = 1 MHz
CT
28.2
-
-
-
2.6
29.5
20.25
9.8
4.45
2.7
30.8
-
-
-
2.8
pF
Capacitance ratio
VR = 0.3 V, VR = 4.7 V
CT0.3/
CT4.7
10 10.9 - pF
Capacitance ratio
VR = 1 V, VR = 3 V
CT1/CT3 - 4.55 - pF
Series resistance
VR = 1 V, f = 470 MHz
rS- 0.6 0.9 Ω
2011-06-15
3
BBY65...
Diode capacitance CT = ƒ (VR)
f = 1MHz
0 1 2 3 V5
VR
0
5
10
15
20
25
30
pf
40
CT
2011-06-15
4
BBY65...
Package SC79
2011-06-15
5
BBY65...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
1) New Marking Layout for SC75, implemented at October 2005.
.
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04dsDSdsDSdsDS
05et ETet ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXhxHXhxHX
09jyJYjyJYjyJY
10kzKZkzKZkzKZ
11l 2L4l 2L4l 2L4
12n3N5n3N5n3N5
2011-06-15
6
BBY65...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
