N-Channel Depletion Mode
Lateral DMOS FET
SD2100 / SST2100
FEATURES
••Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . tON 1.0ns
••Lo w Ca paci tance. . . . . . . . . . . . . . . . . . . . . . . . . crss 2pf
••Low RON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 0 Ω
APPLICATIONS
••An a lo g Sw it ch e s
••Amplifiers
DESCRIPTION
The SD2100/SST2100 is a deplet ion mode DM OS late ra l FET
that provides ultra high speed switching with very low
capacitance. The product is available in TO-72 and surface
moun t SO T-143.
ORDERING INFORMATION
Part Package Temperature Range
SD2100 TO-72 -55oC to +125oC
SST2100 SOT-143 -55oC to +125oC
XSD2100 Sor te d Ch ips in C ar ri er s -55oC to +125oC
LLC
CONNECTION DIAGRAMS
23
BOTTOM VIEW
SOURCE
DRAIN
GATE
SUBSTRATE
1
2
3
414
3
2
4
1
TO-72
1
2
3
4
GATE
(3)
DRAIN
(2)
BODY
(4)
SOURCE
(1)
SOURCE
DRAIN
GATE
BODY
AND CASE
BODY IS INTERNALLY
CONNECTED TO THE CASE
(TOP VIEW)
1
3
4
2
CD1-2
PART MARKING (SOT-231)
SST2100 D10
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS055 REV A
SD2100 / SST2100
LLC
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unless other wise no ted)
SYMBOL PARAMETER TYP1MIN MAX UNIT TEST CONDITIONS
STATIC
V(BR)DS Drain-Source Breakdown Voltage 25 15 V VGS = VBS = -5V, ID = 1µA
IGSS Gate Revers e Curren t ±0.05 ±1nAV
GS = ±25V, VDS = VBS = 0V
IDSS Saturation Drain Current 7 0.5 10 mA VDS = 10V, VGS = VBS = 0 V
VGS(OFF) Gate-Source Cutoff -1.5 -2
V
VDS = 10V, ID = 1µA, VBS = 0V
VGS Gate-Source Voltage -0.3 -1 1 VDG = 10V
VBS = 0V ID = 5mA
0.4 0 1.5 ID = 10mA
rDS(ON) Drain-Source On-Resistance 120 200 ΩID = 100µA
VBS = 0V VGS = 0V
40 50 VGS = 5V
DYNAMIC
gfs Forward Transconductance 8000 1000
µS
VDS = 10V, VGS = VBS = 0V, f = 1kHz
gos Output Cond uctance 250 500
gfs Forward Transconductance 10000 7000 VDG = 10V, VBS = 0V, ID = 10mA , f = 1kHz
gos Output Cond uctance 350 500
Ciss Common-Sourc e Inp ut Capacitance 5 6 pF VDS = 10V, f = 1MHz , VGS = VBS = -5V
Crss Reverse Trans fer Capacitance 1 2
SWITCHING
td(ON) Turn-ON Time 0.7
ns VDD = 5V, RL = 680Ω, VIN = -4V to -2V
tr0.4
tOFF Turn-OFF Time 5
Note1: For desig n aid only, not subject to production testing.
ABSOLUTE M AXIM UM R A T INGS (TA = 2 5oC unles s other wise noted )
SYMBOL PARAMETERS/TEST CONDITIONS LIMITS UNITS
VGS Gate-Source Voltage ±25 V
VDS Drain-Source Voltage 25
IDDrain Current 50 mA
PDPower Dissipatio n 300 mW
Power Derating 2.4 mW/oC
TJOpe rating Junction Temperature -55 to 150
oC
Tstg Storage Temperature -55 to 150
TLLead Temperature (1/16" from case for 10 sec.) 300
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS055 REV A
