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© 2009-2012 by RF Monolithics, Inc. XVT9003 - 2/21/12
Electrical Characteristics
Characteristic Sym Notes Minimum Typical Maximum Units
Nominal Frequency Fo 19.200000 MHz
Storage Temperature Range -40 +85 °C
Operating Temperature Range -30 +80 °C
Power Supply Voltage Vcc 2.8 V
Output Voltage with Load 10 pF || 10K Vout 0.8 VP-P
Output Waveform Clipped Sinewave
Power Supply Current Icc 1.5 mA
Control Voltage Vcon 1.4±1.0 V
Control Voltage Input Impedance 100K ohms
Frequency Tolerance, Vcontrol = 1.4 V, after Two Reflows ±1.5 ppm max @ 25 °C ±3 °C
Frequency Stability versus:
Temperature, -30 to 80 °C ±2.5 ppm
Load, 10 pF||10 K±10% ±0.2 ppm
Supply Voltage, 2.8 V ±5% ±0.2 ppm
Control Voltage Frequency Range, 1.4 ±1.0 V ±5.5 ±9.5 ppm
Start Up Time, 90% of final RF level in VP-P 3.0 ms
Harmonics -5.0 dBc
Aging ±1.0 ppm/year @ 25 °C
Stanard Shipping Quantity on 180 mm (7”) Reel 1000 units
Lid Symbolization (in addition to Lot and/or Date Codes) 9003 - YWWS
SM3225-4 Case
XVT9003
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The design, manufacturing process, and specifications of this device are subject to change without notice.
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Application: Wireless Communication Devices
• Excellent Frequency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.3 mm Surface-mount Case
• Complies with Directive 2002/95/EC (RoHS)
19.200 MHz
VCTCXO
Pb
Preliminary