MITSUBISHI TRANSISTOR MODULES QM50TX-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TX-H * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 68 (N) 20 74 W V U 18.5 18.5 B1 B3 B2 B4 U 86 62.5 10.5 B6 14 B5 B4 20 B3 B2 (P) B1 (10) 18.5 14 11-M4 B5 V P(+) W B6 N(-) 18.5 (10) 4-5.4 80 28.2 4 7 2 LABEL 24.8 26 94 13 13 Note: All Transistor Units are Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A -IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25C 310 W IB Base current DC 3 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute Main terminal screw M4 -- Mounting torque Mounting screw M5 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N*m 10~15 kg*cm 1.47~1.96 N*m 15~20 kg*cm 520 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V -- -- 200 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.0 V VBE (sat) Base-emitter saturation voltage -- -- 2.5 V -VCEO Collector-emitter reverse voltage -IC=50A (diode forward voltage) -- -- 1.75 V hFE DC current gain IC=50A, VCE=2V/5V 75/100 -- -- -- -- -- 1.5 s Switching time VCC=300V, IC=50A, IB1=-IB2=1A -- -- 12 s -- -- 3.0 s Transistor part (per 1/6 module) -- -- 0.4 C/ W Diode part (per 1/6 module) -- -- 1.3 C/ W Conductive grease applied (per 1/6 module) -- -- 0.2 C/ W IC=50A, IB=0.65A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 100 IB=1A DC CURRENT GAIN hFE IB=0.65A 80 IB=0.3A 60 IB=0.2A IB=0.1A 40 20 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 1 7 5 4 3 2 VCE=2.0V Tj=25C 10 0 7 5 4 3 2 10 -1 1.2 1.6 2.0 2.4 BASE-EMITTER VOLTAGE 2.8 3.2 IC=50A 2 1 2 3 4 5 7 10 -1 IC=30A 2 3 4 5 7 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 VBE(sat) 10 0 7 VCE(sat) 5 4 3 IB=0.65A 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 ton, ts, tf (s) 3 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 0 10 -2 Tj=25C Tj=125C VBE (V) Tj=25C Tj=125C IC=20A VCE=2.0V 10 2 7 5 4 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=5.0V 10 0 VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 3 7 5 4 3 2 10 1 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 10 1 7 5 4 3 2 ts VCC=300V IB1=-IB2=1A 10 0 7 5 4 3 2 10 0 ton tf Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 160 VCC=300V 2 IB1=1A IC=50A ts 10 1 7 5 4 3 2 tf COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 3 10 0 7 5 4 3 10-1 Tj=25C Tj=125C 2 3 4 5 7 10 0 120 IB2=-1A 100 BASE REVERSE CURRENT -IB2 (A) 60 40 20 10 0 7 5 3 2 TC=25C NON-REPETITIVE -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) Zth (j-c) (C/ W) 0.4 0.3 0.2 0.1 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) SECOND BREAKDOWN AREA 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 0.5 400 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR-EMITTER VOLTAGE 200 100 DERATING FACTOR (%) 10 1 7 5 3 2 0 DERATING FACTOR OF F. B. S. O. A. 50 10 0 0 s s DC COLLECTOR CURRENT IC (A) s s m 1m 10 -5A -10A FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 -3A 80 0 2 3 4 5 7 10 1 Tj=125C 140 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (C) 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50TX-H MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=1A 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 Tj=25C Tj=125C 10 1 Irr trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 Qrr 7 5 3 trr 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999