Feb.1999
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
QM50TX-H
•ICCollector current .......................... 50A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain...............................75
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
MITSUBISHI TRANSISTOR MODULES
QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
68 11–M4
2020
86
74
62.5
14 14
10.5
4–φ5.4
94
80
(10) 18.5 18.5 18.5 18.5 (10)
B
1
B
2
U
B
3
B
5
B
4
V
B
6
W
(N)(P)
13 13
7
2
4
24.8
26
28.2
B1
B2
B3
U
B4
VW
N(–)
P(+)
B5
B6
LABEL
Note: All Transistor Units are Darlingtons.
Feb.1999
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
600
600
600
7
50
50
310
3
500
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
520
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
Typical value
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=50A, IB=0.65A
–IC=50A (diode forward voltage)
IC=50A, VCE=2V/5V
VCC=300V, IC=50A, IB1=–IB2=1A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.75
—
1.5
12
3.0
0.4
1.3
0.2
Feb.1999
1
10
0
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.2 1.6 2.0 2.4 2.8 3.2
V
CE
=2.0V
T
j
=25°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
23457
1
10
23457
2
10
V
CE(sat)
V
BE(sat)
T
j
=25°C
T
j
=125°C
I
B
=0.65A
100
80
60
40
20
001 23 45
T
j
=25°C
I
B
=0.3A
I
B
=0.1A
I
B
=1A I
B
=0.65A
I
B
=0.2A
3
10
7
5
4
3
2
2
10
7
5
4
3
2
1
10
0
10
23457
1
10
23457
2
10
V
CE
=2.0V
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
0
10
–1
10 75432
–2
10 75432
0
1
2
3
4
5T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=20A
I
C
=50A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
10
23457
1
10
23457
2
10
2
T
j
=25°C
T
j
=125°C
t
f
t
on
t
s
V
CC
=300V
I
B1
=–I
B2
=1A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
1
10
0
10
–1
10
–3
10
–2
10
2
10
1
10
0
10
3
10
2
10
0
10
1
10
–1
10
1
10
7
5
4
3
2
–1
10
23457
0
10
23457
1
10
0
10
7
5
4
3
3
2
T
j
=25°C
T
j
=125°C
t
s
t
f
V
CC
=300V
I
C
=50A
I
B1
=1A
160
40
00 200 800
120
80
400 600
I
B2
=–1A
T
j
=125°C
–10A
–3A
–5A
140
100
60
20
100
90
60
40
20
00 16020 40 60 80 100 120 140
80
10
70
50
30
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
T
C
=25°C
1ms
DC
10ms
100µs
500µs
753275327532
0.5
0.4
0.3
0.1
0
444
23457
0.2
3245
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4 0.8 1.2 1.6 2.0 2.4
T
j
=25°C
T
j
=125°C
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
Feb.1999
–3
10
–1
10
–2
10
0
10
1
10
0
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
–1
10
–1
10
2
10
1
10
0
10
2
10
1
10 75432
0
10 75432
0
100
200
300
400
500
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
I
rr
t
rr
Q
rr
V
CC
=300V
I
B1
=–I
B2
=1A
T
j
=25°C
T
j
=125°C
7532757532
2.0
1.6
1.2
0.8
0.4
0
444
23457
32
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
