fiAMOSPEC HORIZONTAL DEFLECTION POWER TRANSISTORS ... Specifically designed for use in larg screen color deflection circuits. NPN FEATURES: 2SD870 * High Voltage: Veg 9=1500V * Low Saturation Voltage :Vco_..4)=5-0V(Max.) @ I, = 4.0A * High Speed :t, =1.0 us(Max.) @ I-p =4.0A, Ip, = 0.8A * Built-in Damper Type * Glass Passivated Collector-Base Junction S AMPERE POWER MAXIMUM RATINGS TRANSISTORS 1500 VOLTS Characteristic Symbol Rating Unit 50 WATTS Collector-Base Voltage Vepo 1500 Vv Collector-Emitter Voltage Veeo 600 Vv Emitter-Base Voltage Vego 5.0 Vv Collector Current-Continuous le 5.0 A Base Current ls 2.5 A Total Power Dissipation @T,=25C Py 50 Ww Derate above 25C 0.4 wc Operating and Storage Junction Ty. Tst Temperature Range ~ 65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 2.5 C/W PIN 1.8ASE 2.EMITTER COLLECTOR(CASE) FIGURE -1 POWER DERATING om MILLIMETERS MIN MAX P, , POWER DISSIPATION(WATTS) Aoc-LTONMIVOWyY & 8 3 oO) NI 0 25 50 75 100 125 150 T,, TEMPERATURE( C)2SD870 NPN eS ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Cutoff Current lego uA (Vep=500 V, 1,= 0) 10 Emitter-Base Voltage Veo Vv (I, = 200 mA, I, =0 ) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (Ie =1.0A, Veg =5.0V) 8.0 Collector - Emitter Saturation Voltage Vee(saty V (lp = 4.0A, lp = 0.8 A) 5.0 Base - Emitter Saturation Voltage VeE(sat) Vv (lp=4.0A, lp =0.8A) 1.5 Forward Voltage (Damper Diode) Ve V (IF=5.0 A) 2.0 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product fy MHz (lp =0.1A, Vog = 10 V, f = 1.0 MHz ) 3.0(Typ) Collector Output Capacitance Cob pF ( Veg =10 V, I = 0, f = 1.0 MHz ) 170(Typ) SWITCHING CHARATERISTICS [Fall Time | I= 4.04 Igy (end)=0.8A tf | 1.0 Ls (1) Pulse Test: Pulse width = 300 Hs , Duty Cycle = 2.0% EQUIVALENT CIRCUIT COLLECTOR BASE ~50O (TYP ORMITTER2SD870 NPN Ic - Vee 8.0 6.0 S 4000 2 om x 500 3 | wt? 400 o 8 4 200 | 20 ! 100 2 t g250 mA 1520 9 4.0 8.0 12 16 Vee , COLLECTOR-EMITTER VOLTAGE (V) Ic - Vee EMITTER z Tp #25C i =< iw x x 2 oO w - Oo TT 1 al 3 oO 2 0 0.2 0.4 0.8 0.8 1.0 12 4.4 16 Vee, BASE - EMITTER VOLTAGE (V) COLLECTOR SATURATION REGION COMMOM EMITTER T.x28C Vce,, COLLECTOR EMITTER VOLTAGE (VOLTS) Q 02 0.4 06 08 1.0 12 44 ls, BASE CURRENT (A) here , DC CURRENT GAIN Ic , COLLECTOR CURRENT ( mA) DC CURRENT GAIN To100C COMMON EMITTER Voe=5.0V 1 30 $0 100 200 500 1k 2k 5k lc , COLLECTOR CURRENT (mA) ACTIVE-REGION SAFE OPERATING AREA (SOA) 100ms 10 ms -- Bondng Wire Limit ~ Second Breakdown Limit 40} Thermally Limited at T .=25C (Sinde Puse) 1 10 100 600 1000 Vcr , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate [c-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T yp.9=150 C:To is variable depending on conditions. second breakdown pulse limits are valid for duty cycies to 10% provided T.ypigs1 50C, At high case temperatures, thermal limita - tion will reduce the power that can be handied to values less than the limitations imposed by second breakdown.