GBU8005 thru GBU810 Glass Passivated Single-Phase Bridge Rectifiers SYNSEM! SEMICONDUCTOR Voltage Range 50 to 1000 Volts Forward Current 8.0 Amperes Features @ Surge overload rating - 200 Amperes peak @ Ideal for printed circuit boards @ Reliable low cost construction utilizing molded plastic technique @ Plastic maternal has Underwriters Laboratory Flammability Classification 947-0 @ Mounting Position: Any BSO (22.3) 125 (3.2) 45 _ 860 (21.8) 12 CHAMFER ~ _ 4g [ eo = - - = T tT TP 310 (7.9) 160 (4.1) 200 (7 4) MOUS) | | | {=+ BO | = 740 (16 8) . Lat. a, 060 720 (18 3) 095 (2 16)4 + o7s (2.03) O65 (1.65) i18)R resi | | ozoRayp) Wo t Tl ceo sz . : iT. 060 41.52) i i ite } | hii gas (1 14) 100 (2.54). | : 085 (2.16) reece) 080 (2.03) PP. ospc1 27) SBR 1727) 065 (1 65) LT 040 (1 02) | ee : y wir bia 1 46) 210 210 210 190 190) 190) (5.33) (5.43) (5.33) (4.83) (4.83) (483) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz resistive or indudive bad. For capadtive load, derate current by 2056 Parameter Symbols | GEUS006 | GSUS1 | GBUSI? | GEUSH | GBUSDS | GBUOUS | GBUS | Units Maximum recurrent peak reverse voltage Mae 60 100 200 400 600 B00 qoog Volts Maximum RMS voltage Venus 35 FO 140 280 420 56g Fou Volts Masinum OC blocking voltage Voo Bt) 100 200 400 6oc Beit ade Volts Maximum average fonward dwith heatsink Mote 2) | 8.0 Anne rectified output current @T=100C twithout heatsink) FLU 32 P Peak fonward surge cument, 8.3ms single half sinewave superimposed on rated load GEDEC Method) bow 20:0 ANNs Max instantaneous fonward voltage drop at 4.0.4 00 VE 4.0 Vat Masinurn OC reverse current 1 =26C 6.0 ae at rated DC blocking voltage per element @@T =1 25C kk 500.0 Rating for fusing &<8.3rre} Ft 166 Ajsec Typical junction capacitance per element (Note 13 Cc, 60 pF Typical thermal resistance (Mote 2) Rage 22 ai Operating temperature range T, -66 fo +760 oS Storage ternperature range Tess -66 te +760 ay Notes: = 1. Measured at 1.OMHz and applied reverse voltage of4 oy DC 2. Device mounted on 1 00mm 1 G0mr-x 1 .inon Cu plate heatsinkGBU8005 thru GBU810 RATINGS AND CHARACTERISTIC CURVES (T, = 25C unless othensise notech FIG. 1 - FORWARD CURRENT DERATING CURVE 10.0 a0 6.0 WITHOUT HEATSINK, AMPERES 4.0 20 Qo 20 40 60 ao 100: 120 140 CASE TEMPERATURE, 'C FIG. 3 - TYPICAL JUNCTION CAPACITANCE T25 C, IMHE 10 4.0 10.0 100 REVERSE VOLTAGE, VOLTS FIG. 2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 8 8 a & PEAK FORWARD SURGE CURRENT. AMPERES Single Hatf-Sine-Wave (epee METHOD) 0 tL + 2 6 1) (20 0 100 NUMBER OF CYCLES AT 60Hz FIG. 4- TYPICAL FORWARD CHARACTERISTICS = 8 = o INSTANTANEOUS FORWARD CURRENT, (A) Tags C PULSE WIDTH: 300ua | | | 0 02 Of O08 O08 10 12 14 16 18 INSTANTANEOUS FORWARD VOLTAGE, VOLTS o4 FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 5 8 5 INSTANTANEOUS REVERSE CURRENT, (uA) S O41 o 20 40 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) ao 80 100