IXTA120N04T2 - Zilog - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C40 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ40 V

VGSM Transient ± 20 V

ID25 TC= 25°C 120 A

IDM TC= 25°C, pulse width limited by TJM 360 A

IATC= 25°C50 A

EAS TC= 25°C 400 mJ

PDTC= 25°C 200 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062in.) from case for 10s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 40 V

VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V

IGSS VGS = ± 20V, VDS = 0V ±100 nA

IDSS VDS = VDSS 2 μA

VGS = 0V TJ = 150°C 50 μA

RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 6.1 mΩ

TrenchT2TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA120N04T2

IXTP120N04T2

VDSS = 40V

ID25 = 120A

RDS(on) ≤≤

≤≤

≤ 6.1mΩΩ

ΩΩ

Ω

DS99973A(11/08)

G = Gate D = Drain

S = Source TAB = Drain

TO-263

GS

(TAB)

TO-220

GDS(TAB)

Features

zInternational standard packages

zAvalanche rated

zLow package inductance

z175°C Operating Temperature

zHigh current handling capability

zLow RDS(on)

Advantages

zEasy to mount

zSpace savings

zHigh power density

Applications

•Synchronous Buck Converters

•High Current Switching Power

Supplies

•Battery Powered Electric Motors

•Resonant-mode power supplies

•Electronics Ballast Application

•Class D Audio Amplifiers

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA120N04T2

IXTP120N04T2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 28 47 S

Ciss 3240 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 557 pF

Crss 140 pF

td(on) 14 ns

tr 8 ns

td(off) 16 ns

tf 11 ns

Qg(on) 58 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC

Qgd 10 nC

RthJC 0.75 °C/W

RthCH TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

IS VGS = 0V 120 A

ISM Repetitive, Pulse width limited by TJM 480 A

VSD IF = 60A, VGS = 0V, Note 1 1.2 V

trr 35 ns

IRM 1.6 A

QRM 28 nC

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact

location must be 5mm or less from the package body.

Resistive Switching Times

VGS = 10V, VDS = 20V, ID = 0.5 • ID25

RG = 5Ω (External)

IF = 60A, VGS = 0V

-di/dt = 100A/μs

VR = 20V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

IXTA120N04T2

IXTP120N04T2

Fig. 1. Output Characteristics

@ 25º C

0

20

40

60

80

100

120

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

DS

- Volts

I

D

- Amperes

VGS

= 15V

10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

012345678

V

DS

- Volts

I

D

- Amperes

VGS

= 15V

8V

5V

6V

7V

10V

9V

Fig. 3. Output Characteristics

@ 150ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

DS

- Volts

I

D

- Amperes

VGS

= 15V

10V

9V

8V

7

V

5

V

6

V

Fig. 4. R

DS(on)

Normalized to I

D

= 60A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

VGS

= 10V

I D = 120A

I D = 60A

Fig. 5. R

DS(on)

Normalized to I

D

= 60A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0 30 60 90 120 150 180 210 240 270

I

D

- Amperes

R

DS(on)

- Normalized

VGS

= 10V

15V - - - - TJ = 175ºC

TJ = 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

90

100

110

120

130

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA120N04T2

IXTP120N04T2

IXYS REF: T_120N04T2(V3)12-15-08-A

Fig. 7. Input Ad mittance

0

10

20

30

40

50

60

70

80

90

100

2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

0 102030405060708090100

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

150ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diod e

0

30

60

90

120

150

180

210

240

270

300

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate C h arg e

0

1

2

3

4

5

6

7

8

9

10

0 102030405060

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 20V

I

D

= 60A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Fo r ward -B ias Safe Op erati n g Area

1

10

100

1000

110100

V

DS

- Volts

I

D

- Amperes

25µs

100µs

1ms

10ms

100ms

DC

R

DS(on)

Limit

T

J

= 175ºC

T

C

= 25ºC

Single Pulse

IXTA120N04T2

IXTP120N04T2

Fi g . 14. R esi st iv e Tur n -o n

Rise Time vs. Drain Current

2

3

4

5

6

7

8

9

10

11

20 30 40 50 60 70 80 90 100

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 20V T

J

= 25ºC

T

J

= 125ºC

Fi g . 15. R esi st i ve Tur n -o n

Switc h in g Time s vs. Gate R esi stan ce

0

2

4

6

8

10

12

14

16

4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

r

- Nanoseconds

10

11

12

13

14

15

16

17

18

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 20V

I

D

= 60A, 120A

Fig. 16. Resistive T urn-off

Switching Times vs. Junction Temperature

7

8

9

10

11

12

13

14

15

16

17

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

8

10

12

14

16

18

20

22

24

26

28

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 20V

I

D

= 60A

I

D

= 120A

Fi g. 17. R esisti v e Turn -off

Switching T imes vs. Drain Current

8

10

12

14

16

18

20

22

24

20 30 40 50 60 70 80 90 100

I

D

- Amperes

t

f

- Nanoseconds

12

14

16

18

20

22

24

26

28

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 20V

T

J

= 125ºC, 25ºC

Fig. 13. Resistive T urn-on

Rise Time vs. Junction Temp erature

1

2

3

4

5

6

7

8

9

10

11

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 20V

I

D

= 60A

I

D

= 120A

Fi g. 18. R esisti ve Turn -off

Switchi n g Times vs. Gate R esistan ce

0

10

20

30

40

50

60

70

80

90

4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

f

- Nanoseconds

0

10

20

30

40

50

60

70

80

90

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 20V

I

D

= 120A

I

D

= 60A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA120N04T2

IXTP120N04T2

Fi g. 19. Maximum Tran si ent Ther mal I mped an ce

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXYS REF: T_120N04T2(V3)12-15-08-A