IXTA120N04T2 IXTP120N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 120A 6.1m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 20 V ID25 TC = 25C 120 A IDM TC = 25C, pulse width limited by TJM 360 A IA TC = 25C 50 A EAS TC = 25C 400 mJ PD TC = 25C 200 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 C C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL TSOLD 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 TO-220 G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z z z International standard packages Avalanche rated Low package inductance 175C Operating Temperature High current handling capability Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 (c) 2008 IXYS CORPORATION, All rights reserved z Easy to mount Space savings High power density V 4.0 V 100 nA 2 A TJ = 150C z 50 A 6.1 m Applications * Synchronous Buck Converters * High Current Switching Power Supplies * Battery Powered Electric Motors * Resonant-mode power supplies * Electronics Ballast Application * Class D Audio Amplifiers DS99973A(11/08) IXTA120N04T2 IXTP120N04T2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 * ID25, Note 1 28 TO-263 (IXTA) Outline 47 S 3240 pF 557 pF 140 pF 14 ns 8 ns 16 ns tf 11 ns Qg(on) 58 nC 17 nC 10 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 20V, ID = 0.5 * ID25 RG = 5 (External) VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.75 C/W RthJC RthCH TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse width limited by TJM 480 A VSD IF = 60A, VGS = 0V, Note 1 1.2 V trr IF = 60A, VGS = 0V IRM -di/dt = 100A/s VR = 20V QRM 35 ns 1.6 A 28 nC TO-220 (IXTP) Outline Notes: 1. Pulse test, t 300s; duty cycle, d 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA120N04T2 IXTP120N04T2 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 350 120 VGS = 15V 10V 9V 8V 100 VGS = 15V 10V 300 9V 80 7V ID - Amperes ID - Amperes 250 60 6V 40 8V 200 150 7V 100 20 5V 6V 50 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 1 2 3 7 8 VGS = 10V 1.8 RDS(on) - Normalized ID - Amperes 6 2.0 VGS = 15V 10V 9V 8V 100 5 Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150C 120 4 VDS - Volts VDS - Volts 80 7V 60 6V 40 5V 20 I D = 120A 1.6 I D = 60A 1.4 1.2 1.0 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 130 2.2 VGS = 10V 15V - - - - 2.0 120 110 TJ = 175C 90 ID - Amperes RDS(on) - Normalized 100 1.8 1.6 1.4 80 70 60 50 40 1.2 30 TJ = 25C 1.0 20 10 0 0.8 0 30 60 90 120 150 180 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 210 240 270 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA120N04T2 IXTP120N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 70 90 TJ = - 40C 60 80 50 g f s - Siemens ID - Amperes 70 60 50 40 TJ = 150C 25C - 40C 30 20 25C 40 150C 30 20 10 10 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 10 20 30 40 VGS - Volts 60 70 80 90 100 Fig. 10. Gate Charge 300 10 270 9 VDS = 20V 240 8 I G = 10mA 210 7 180 6 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 150 120 TJ = 150C 90 50 ID - Amperes I D = 60A 5 4 3 TJ = 25C 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 10 20 30 40 50 60 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 RDS(on) Limit Ciss ID - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss 25s 100 100s 1ms 10 DC TJ = 175C 10ms 100ms TC = 25C Crss Single Pulse 1 100 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_120N04T2(V3)12-15-08-A IXTA120N04T2 IXTP120N04T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 11 11 RG = 5 10 8 7 I 6 D = 60A 5 I 4 D VGS = 10V 9 VDS = 20V t r - Nanoseconds t r - Nanoseconds 9 RG = 5 10 VGS = 10V = 120A TJ = 25C VDS = 20V 8 7 6 5 TJ = 125C 4 3 3 2 2 1 25 35 45 55 65 75 85 95 105 115 20 125 30 40 50 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125C, VGS = 10V 17 17 16 tf 15 RG = 5, VGS = 10V 16 15 I D = 60A, 120A 8 14 10 14 9 12 10 8 10 7 14 16 18 8 25 20 35 45 55 tf 24 18 22 16 20 14 18 TJ = 125C, 25C 16 10 8 40 50 60 105 115 125 70 80 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 90 td(off) - - - - 80 TJ = 125C, VGS = 10V 70 70 VDS = 20V 60 60 50 50 40 40 I D = 60A 30 30 20 14 10 12 100 0 20 I D = 120A 10 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds VDS = 20V 30 95 90 tf 80 26 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 5, VGS = 10V 20 85 90 28 t f - Nanoseconds 24 12 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 20 65 TJ - Degrees Centigrade RG - Ohms 22 20 I D = 60A I D = 120A 16 11 12 22 18 2 10 24 VDS = 20V 11 12 0 26 12 4 8 100 td(off) - - - - 13 13 6 90 28 14 6 4 80 t d(off) - Nanoseconds 10 t d(on) - Nanoseconds VDS = 20V 12 t r - Nanoseconds td(on) - - - - 18 t f - Nanoseconds 14 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 16 tr 60 ID - Amperes IXTA120N04T2 IXTP120N04T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - C / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_120N04T2(V3)12-15-08-A