DMTH4004SCTB Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features NEW PRODUCT BVDSS RDS(ON) max ID TC = +25C (Note 9) 40V 3m @ VGS = 10V 100A Rated to +175C - Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching - Ensures More Reliable and Robust End Application Low RDS(ON) - Minimizes Power Losses Low Qg - Minimizes Switching Losses Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4004SCTBQ) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Engine Management Systems Body Control Electronics DC-DC Converters Case: TO263AB Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 1.4 grams (Approximate) TO263AB D D G Top View S Pin Out Top View Internal Schematic Ordering Information (Note 4) Part Number DMTH4004SCTB-13 Notes: Case TO263AB Packaging 800 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information T4004SCTB YYWW DMTH4004SCTB Document number: DS37328 Rev. 3 - 2 T4004SCTB = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 14 = 2014) WW = Week (01 to 53) 1 of 6 www.diodes.com November 2015 (c) Diodes Incorporated DMTH4004SCTB Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25C (Note 9) TC = +100C NEW PRODUCT Continuous Drain Current (Note 6) Maximum Continuous Body Diode Forward Current Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L=0.2mH Avalanche Energy, L=0.2mH Value 40 20 Unit V V 100 ID A IS IDM IAS EAS 100 100 200 45 200 A A A mJ Symbol PD RJA PD RJC TJ, TSTG Value 4.7 32 136 1.1 -55 to +175 Unit W C/W W C/W C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TC = +25C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: TA = +25C Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 40 -- -- -- -- -- -- 1 100 V A nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 -- -- -- 2.5 -- 4 3 1.3 V m V VDS = VGS, ID = 250A VGS = 10V, ID = 100A VGS = 0V, IS = 100A Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- 4305 1441 102 0.77 68.6 16.8 14.2 9.5 6.7 26.4 8.1 52.4 78.2 -- -- -- -- -- -- -- -- -- -- -- -- -- pF VDS = 25V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 20V, ID = 90A, VGS = 10V ns VDD = 20V, VGS = 10V, ID = 90A, RG = 3.5 ns nC IF = 50A, di/dt = 100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Device mounted on infinite heatsink and measured by thermal couple attached on bottom heasink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. DMTH4004SCTB Document number: DS37328 Rev. 3 - 2 2 of 6 www.diodes.com November 2015 (c) Diodes Incorporated DMTH4004SCTB 150.0 30 VGS=10.0V VDS= 5.0V VGS=6.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=5.0V 90.0 VGS=4.5V 60.0 30.0 175 20 150 15 125 10 85 VGS=4.0V 5 25 VGS=3.5V -55 0.0 0 0.5 1 1.5 2 2.5 3 2 3 4 5 Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic 2.90 2.80 2.70 VGS=10.0V 2.60 2.50 2.40 2.30 2.20 2.10 2.00 30 50 70 15 90 110 130 12 9 6 ID=100A 3 0 150 2 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS=10V 0.005 150 175 0.004 125 85 0.003 25 0.002 -55 0.001 0 30 50 70 90 110 130 Document number: DS37328 Rev. 3 - 2 6 8 10 12 14 16 18 20 2.2 2 1.8 1.6 VGS=10V, ID=90A 1.4 1.2 1 0.8 0.6 0.4 150 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMTH4004SCTB 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 0.006 10 1 VGS, GATE-SOURCE VOLTAGE (V) 3.00 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT 120.0 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature November 2015 (c) Diodes Incorporated 4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.005 0.004 VGS=10V, ID=100A 0.003 0.002 0.001 3.5 3 2.5 ID=1mA 2 -25 0 25 50 75 ID=250mA 1.5 1 0.5 0 0 -50 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Temperature 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS=0V, TA=175 IS, SOURCE CURRENT (A) -25 10000 150 120 VGS=0V, TA=150 90 VGS=0V, TA=125 60 VGS=0V, TA=85 VGS=0V, TA=25 30 Ciss 1000 Coss 100 Crss VGS=0V, TA=-55 0 10 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE(V) VSD, SOURCE-DRAIN VOLTAGE (V) 40 Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 1000 10 RDS(ON) Limited 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMTH4004SCTB VDS=20V, ID=90A 6 4 PW =1s PW =10s 100 PW =100s 10 PW =10ms 1 2 0 PW =1ms TJ(Max) = 175 TC = 25 Single Pulse DUT on Infinite Heatsink VGS= 10V PW =100ms PW =1s 0.1 0 10 20 30 40 50 60 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMTH4004SCTB Document number: DS37328 Rev. 3 - 2 70 4 of 6 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 November 2015 (c) Diodes Incorporated DMTH4004SCTB 1 NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJC(t) = r(t) * RJC RJC = 1.08/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A E c2 L1 7 1 D H L2 e b c See Detail B b2 L3 E1 Gauge Plane D1 Seating Plane a L A1 TO263AB (D2PAK) Dim Min Max Typ A 4.07 4.82 A1 0.00 0.25 b 0.51 0.99 b2 1.15 1.77 c 0.356 0.73 c2 1.143 1.65 D 8.39 9.65 D1 6.55 6.95 e 2.54 TYP E 9.66 10.66 E1 6.23 8.23 H 14.61 15.87 L 1.78 2.79 L1 1.67 L2 1.77 L3 0.254 a 0 8 All Dimensions in mm Detail B DMTH4004SCTB Document number: DS37328 Rev. 3 - 2 5 of 6 www.diodes.com November 2015 (c) Diodes Incorporated DMTH4004SCTB Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 Dimensions C X X1 Y Y1 Y2 NEW PRODUCT Y2 X Value (in mm) 5.08 1.10 10.41 3.50 7.01 15.99 Y C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2015, Diodes Incorporated www.diodes.com DMTH4004SCTB Document number: DS37328 Rev. 3 - 2 6 of 6 www.diodes.com November 2015 (c) Diodes Incorporated