Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Ordering number:ENN2112B
2SB1201/2SD1801
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112–1/5
Package Dimensions
unit:mm
2045B
[2SB1201/2SD1801]
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Large current capacity and wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small and slim package making it easy to make
2SB1201/2SD1801-used sets smaller.
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1201/2SD1801]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3 0.5
123
4
2.3 2.3
6.5 2.3 0.5
1.55.5
0.8
7.0
1.2
2.5
5.0
0.85 0.5
1.2
0 to 0.2
2.3 2.3
0.612
4
3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
http://semicon.sanyo.com/en/network
2SB1201/2SD1801
No.2112–2/5
( ) : 2SB1201
Specifications
Absolute Maximum Ratings at Ta = 25˚C
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Switching Time Test Circuit
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 06)–(V
egatloVrettimE-ot-rotcelloCV
OEC 05)–(V
egatloVesaB-ot-rettimEV
OBE 6)–(V
tnerruCrotcelloCI
C2)–(A
)esluP(tnerruCrotcelloCI
PC 4)–(A
noitapissiDrotcelloCP
C8.0W
51W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V05)–(= E0=001)–(An
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=001)–(An
niaGtnerruCCD hEF 1V
EC I,V2)–(= CAm001)–(=*001*065
hEF 2V
EC I,V2)–(= CA5.1)–(=04
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm05)–(=051zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=21)22(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,A1)–(= BAm05)–(= 51.04.0V
)3.0–()7.0–(V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,A1)–(= BAm05)–(=9.0)–(2.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=06)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞05)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=6)–(V
emiTNO-nruTt
no tiucriCtseTdeificepseeS06sn
emiTegarotSt
gts tiucriCtseTdeificepseeS )054(sn
055sn
emiTllaFt
ftiucriCtseTdeificepseeS03sn
* : The 2SB1201/2SD1801 are classified by 100mA hFE as follows :
knaRRSTU
hEF 002ot001082ot041004ot002065ot082
VRRB
VCC=25VVBE= --5V
++
50Ω
INPUT
OUTPUT
RL
100µF 470µF
PW=20µsIB1
D.C.≤1% IB2
IC=10IB1= --10IB2=500mA, VCC=25V
(For PNP, the polarity is reversed.)
2SB1201/2SD1801
No.2112–3/5
--2.4
--1.6
--1.2
--0.8
--0.4
--2.0
00 --0.4 --0.8 --2.4--2.0--1.6--1.2
IC -- VCE
ITR09144
IC -- VCE
ITR09145
2.4
1.6
1.2
0.8
0.4
2.0
00 0.4 0.8 2.42.01.61.2
--50mA
--20mA
IB=0
--10mA
--2mA
--8mA
--6mA
--4mA
2SB1201
IB=0
2mA
15mA
25mA
40mA
50mA
4mA
8mA
2SD1801
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
--1.6
--1.2
--2.4
--2.0
--0.8
--0.4
0
IC -- VBE
ITR09148
Ta=75°C
25°C
--25°C
2SB1201
VCE= --2V
IC -- VBE
ITR09149
hFE -- IC
2
3
5
7
7
1000
2
3
5
100
23 557 7 7
--0.01 --0.1 23523 --1.0ITR09150
2SB1201
VCE= --2V
Ta=75°C
25°C
--25°C
hFE -- IC
ITR09151
0 0.2 0.4 0.6 0.8 1.21.0
1.6
1.2
2.4
2.0
0.8
0.4
0
Ta=75°C
25°C
--25°C
2SD1801
VCE=2V
--1200
--800
--600
--400
--200
--1000
00 --2 --4 --12--10--8--6
IC -- VCE
IB=0
ITR09146
2SB1201
--7mA
--6mA
--5mA
--4mA
--3mA
--2mA
--1mA
IC -- VCE
ITR09147
1200
800
600
400
200
1000
0024 121086
2SD1801
IB=0
7mA
6mA
5mA
4mA
3mA
2mA
1mA
2
3
5
7
7
1000
2
3
5
100
23 557 7 7
0.01 0.1 23523 1.0
Ta=75°C
25°C
--25°C
2SD1801
VCE=2V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–A
DC Current Gain, hFE
Collector Current, IC–A
2SB1201/2SD1801
No.2112–4/5
23
--100--10 23 523 57 7
--1000
fT -- IC
1000
10
7
5
2
3
100
7
5
2
3
ITR09152
2SB1201
VCB=10V
23
10010 23 523 57 7
1000
fT -- IC
1000
10
7
5
2
3
100
7
5
2
3
ITR09153
2SD1801
VCB=10V
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
5
7
7
3
2
5
3
--1.0
--10
57 7 7
--0.01 2323 523 5 --0.1 --1.0ITR09158
VBE(sat) -- IC2SB1201
IC / IB=20
25°C
75°C
Ta=
--25°C
5
7
7
3
2
5
3
1.0
10
57 7 7
0.01 2323 523 5 0.1 1.0
25°C
75°C
Ta=
--25°C
ITR09159
VBE(sat) -- IC2SD1801
IC / IB=20
Cob -- VCB
--1.0 --10
7
3
5
7
5
100
10
2
2
2735 --100
2735
ITR09154
2
5
7
7
3
2
5
3
--1000
--10
--100
2357 7 75
--0.01 23 5 3
--0.1 2
--1.0ITR09156
VCE(sat) -- IC
2SB1201
IC / IB=20
25°C
Ta=75°C
--25°C
2
5
7
7
3
2
5
3
1000
10
100
2357 7 75
0.01 23 5 3
0.1 2
1.0 ITR09157
VCE(sat) -- IC
2SD1801
IC / IB=20
25°C
Ta=
75°C
--25°C
2SB1201
f=1MHz
Cob -- VCB
1.0 10
7
3
5
7
5
100
10
2
2735 100
2735
ITR09155
2SD1801
f=1MHz
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–A
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
2SB1201/2SD1801
PS No.2112–5/5
A S O
1.0
0.1
0.01
5
3
2
5
3
5
7
7
3
2
2
1.0 10
2257733 100
2535
ITR09160
0
16
12
15
14
8
10
6
4
0.8
2
0 20 40 60 100 120 140 16080
PC -- Ta
ITR09161
2SB1201 / 2SD1801
No heat sink
2SB1201 / 2SD1801
(For PNP, minus sign is omitted.)
Tc=25°C, Single pulse
100ms
10ms
1ms
DC operation Tc=25°C
DC operation Ta=25°C
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector Dissipation, PC–W
Ambient Temperature, Ta – ˚C
IC=2A
ICP=4A
