Ordering number:ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications unit:mm 2045B [2SB1201/2SD1801] 6.5 5.0 4 2.3 5.5 * Adoption of FBET, MBIT processes. * Large current capacity and wide ASO. * Low collector-to-emitter saturation voltage. * Fast switching speed. * Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. 0.5 7.0 Features 0.85 0.7 0.8 1.6 1.2 7.5 * Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions 1.5 Applications 0.6 0.5 1 2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 3 2.3 2.3 unit:mm 2044B [2SB1201/2SD1801] 6.5 5.0 4 0.5 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 2.3 3 1.2 0 to 0.2 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Semiconductor Co.,Ltd. Semiconductor Company SANYO Electric Co.,Ltd. Bussiness Headquaters http://semicon.sanyo.com/en/network OFFICE Bldg., 1-10, Chome, Ueno, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TOKYOTOKYO OFFICE TokyoTokyo Bldg., 1-10, 1 1Chome, Taito-ku, TOKYO, 110-8534 JAPAN 10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112-1/5 2SB1201/2SD1801 ( ) : 2SB1201 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Conditions Ratings Unit VCBO VCEO (-)60 V (-)50 V VEBO IC (-)6 V (-)2 A ICP (-)4 A 0.8 W Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 15 W 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)50V, IE=0 (-)100 nA Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)100 nA hFE1 VCE=(-)2V, IC=(-)100mA 100* hFE2 VCE=(-)2V, IC=(-)1.5A VCE=(-)10V, IC=(-)50mA 40 DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob VCE(sat) IC=(-)1A, IB=(-)50mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(-)1A, IB=(-)50mA Collector-to-Base Breakdown Voltage 150 VCB=(-)10V, f=1MHz Collector-to-Emitter Saturation Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IE=(-)10A, IC=0 See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time MHz (22)12 V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= Collector-to-Emitter Breakdown Voltage 560* pF 0.15 0.4 V (-0.3) (-0.7) V (-)0.9 (-)1.2 V (-)60 V (-)50 V (-)6 V 60 ns (450) ns 550 ns 30 ns * : The 2SB1201/2SD1801 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 VR RB RL 50 + 100F VBE= --5V + 470F VCC=25V IC=10IB1= --10IB2=500mA, VCC=25V (For PNP, the polarity is reversed.) No.2112-2/5 2SB1201/2SD1801 IC -- VCE --2.4 50 Collector Current, IC - A A --5 0m --1.6 --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA 0 --0.4 --0.8 --1.2 --2.0 2mA IB=0 0 0.4 0.8 --3mA --2mA --400 --1mA 1.6 2.0 2.4 ITR09145 IC -- VCE 2SD1801 7mA 6mA 1000 --4mA 1.2 Collector-to-Emitter Voltage, VCE - V Collector Current, IC - mA Collector Current, IC - mA 4mA 0.8 1200 2SB1201 --5mA --600 8mA ITR09144 --6mA --800 1.2 --2.4 IC -- VCE --7mA --1000 15mA 0 --1.6 Collector-to-Emitter Voltage, VCE - V --1200 1.6 0.4 IB=0 0 25mA 5mA 800 4mA 3mA 600 2mA 400 1mA --200 200 IB=0 0 0 --2 --4 --6 --10 Collector-to-Emitter Voltage, VCE - V --12 0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE - V ITR09146 IC -- VBE --2.4 IB=0 0 --8 IC -- VBE 2.4 2SB1201 VCE= --2V 2SD1801 VCE=2V 2.0 Collector Current, IC - A --2.0 12 ITR09147 --1.6 --1.2 Ta= 75 25C C --25 C --0.8 --0.4 1.6 1.2 0.8 Ta= 7 25 5C C --25 C Collector Current, IC - A --20 --0.4 Collector Current, IC - A A 40m 2.0 mA 2SD1801 mA --2.0 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V --1.2 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 2SD1801 VCE=2V 7 5 1.2 ITR09149 hFE -- IC 1000 2SB1201 VCE= --2V 7 0 ITR09148 hFE -- IC 1000 5 3 Ta=75C 2 --25C 25C DC Current Gain, hFE DC Current Gain, hFE IC -- VCE 2.4 2SB1201 100 7 3 100 7 5 5 3 3 2 Ta=75C 25C --25C 2 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 ITR09150 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC - A 2 3 ITR09151 No.2112-3/5 2SB1201/2SD1801 f T -- IC 7 5 3 2 100 7 5 3 2 10 --10 3 5 7 --100 3 2 100 7 5 3 2 2 3 5 7 --1000 2 3 2 10 3 5 7 100 2 3 5 7 1000 2SD1801 f=1MHz 7 7 5 3 2 10 3 ITR09153 Cob -- VCB 100 2SB1201 f=1MHz 100 2 Collector Current, IC - mA ITR09152 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 Cob -- VCB 2 5 3 2 10 7 7 5 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 3 2 --100 C 25 5 C =75 Ta 3 --25 2 5 C 7 2 10 3 5 --10 7 100 ITR09155 VCE(sat) -- IC 2SD1801 IC / IB=20 7 7 3 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 5 2 1000 2SB1201 IC / IB=20 7 5 1.0 7 --100 ITR09154 VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2SD1801 VCB=10V 7 10 2 Collector Current, IC - mA 5 3 2 100 7 5 C Ta=75 3 C 25 C --25 2 10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 5 Base-to-Emitter Saturation Voltage, VBE (sat) - V 2 25C Ta= --25C 75C 5 5 7 0.1 2 3 5 3 7 1.0 2 3 ITR09157 VBE(sat) -- IC 2SD1801 IC / IB=20 7 3 7 3 10 5 --1.0 2 Collector Current, IC - A 2SB1201 IC / IB=20 7 7 0.01 ITR09156 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) - V f T -- IC 1000 2SB1201 VCB=10V Gain-Bandwidth Product, fT - MHz Gain-Bandwidth Product, fT - MHz 1000 5 3 2 1.0 25C Ta= --25C 7 75C 5 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC - A 7 --1.0 2 3 ITR09158 5 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC - A 7 1.0 2 3 ITR09159 No.2112-4/5 2SB1201/2SD1801 ASO 5 14 10m op 1.0 7 5 s DC op nT era c= tio 2 C 25 nT a= 25 C 0.1 7 5 3 ms 100 tio DC 3 era Collector Current, IC - A 2 2SB1201 / 2SD1801 (For PNP, minus sign is omitted.) Tc=25C, Single pulse 2 0.01 2 3 5 1.0 2SB1201 / 2SD1801 15 s IC=2A 2 3 5 7 10 Collector Dissipation, PC - W ICP=4A 3 PC -- Ta 16 1m 12 10 8 6 4 2 No heat sink 0.8 0 2 3 Collector-to-Emitter Voltage, VCE - V 5 7 100 ITR09160 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR09161 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2004. Specifications and information herein are subject to change without notice. PS No.2112-5/5