3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
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Revision: 27-Jun-13 1Document Number: 88888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
UL recognition file number E54214
Ideal for printed circuit board
High surge current capability
High case dielectric strength
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package KBPM
IF(AV) 3.0 A
VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V
IFSM 80 A
IR5 μA
VF at IF = 3.0 A 1.05 V
TJ max. 150 °C
Diode variations In-Line
+~~−
Case Style KBPM
+
~
~
e4
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 V
Maximum average forward output rectified
current at TA = 55 °C (Fig. 1) IF(AV) 3.0 A
Peak forward surge current 50 Hz single half
sine-wave superimposed on rated load IFSM 80 A
Rating for fusing (t < 10 ms) I2t32A
2s
Operating junction and storage temperature
range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Maximum instantaneous
forward voltage drop per
diode
3.0 A VF1.05 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TJ = 25 °C
IR
5.0
μA
TJ = 125 °C 500
Typical junction
capacitance per diode
4.0 V,
1 MHz CJ25 pF
3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com Vishay General Semiconductor
Revision: 27-Jun-13 2Document Number: 88888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Forward Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Typical thermal resistance (1) RJA 30 °C/W
RJL 11
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
3KBP06M-E4/51 1.912 51 600 Anti-static PVC tray
020 40 60 80 100 120 140 160
0
1
2
3
4
60 Hz
Resistive or
Inductive Load
With Heat Sink
Without Heat Sink
Heat Sink Mounting:
3.0 x 3.0 x 0.11" Thick
(7.5 x 7.5 x 0.3 cm) Al. Plate
Ambient Temperature (°C)
Average Forward Current (A)
110 100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.5
0.4 0.6 0.8 1.0 1.2
1.1
0.01
0.1
1
10
0.7 0.9
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
10 20 40 60 80 100
0.01
0.1
1
10
100
30 50 70 90
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com Vishay General Semiconductor
Revision: 27-Jun-13 3Document Number: 88888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Polarity shown on front side of case: positive lead by beveled corner
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.034 (0.86)
0.028 (0.76)
0.105 (2.67)
0.085 (2.16)
0.160 (4.1)
0.140 (3.6)
0.060
(1.52)
0.460 (11.68)
0.50 (12.7) MIN.
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
0.60
(15.2)
MIN.
DIA.
0.200 (5.08)
0.180 (4.57)
Case Style KBPM
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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