AiAMOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Veeopus= 49V(Min)- BD241,BD242 60V(Min)- BD241A,BD242A 80V(Min)- BD241B,BD242B 100V(Min)- BD241C,BD242C * DC Current Gain hFE= 25(Min)@I,= 1.0A * Current Gain-Bandwidth Product fT=3.0 MHz (Min)@ 1,=500mA MAXIMUM RATINGS NPN BD241 BD241A BD241B BD241C PNP BD242 BD242A BD242B BD242C 3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45 -100 VOLTS 40 WATTS fv TO-220 Characteristic Symbol | BD241 |BD241A/|BD241B/BD241C| Unit BD242 | BD242A/|BD242B | BD242C Collector-Emitter Voltage Veco 45 60 80 100 Vv Collector-Base Voltage Veso 55 70 90 115 Vv Emitter-Base Voltage Veno 5.0 Vv Collector Current - Continuous Is 3.0 A - Peak 5.0 Base Current lb 1.0 A Total Power Dissipation@T, = 25C Pp 40 Ww Derate above 25C 0.32 wc Operating and Storage Junction Ty. Ts1 c Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case| Roic 3.125 C FIGURE -1 POWER DERATING P, , POWER DISSIPATION(WATTS) ounoaBbBR SRS oO 2 50 7 100 125 150 Te , TEMPERATURE(*C) a 123 Th 5 LL H HL . L i: Ke PIN 1.BASE 2.COLLECTOR 3,EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.58 | 15.31 B 9.78 | 10.42 c 5.01 6.52 D 13.06 | 14.62 E 3.57 407 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 498 J 1.14 1.38 K 2.20 2.97 L 0.33 O55 M 2.48 2.98 oO 3.70 3.90BD241,A,B,C NPN / BD242,A,B,C PNP a ELECTRICAL CHARACTERISTICS ( T,, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS BD241,BD242 BD241A,BD242A BD241B,BD242B BD241C,BD242C Collector-Emitter Sustaining Voltage(1) ( l-= 30mA,I,= 0 ) VeEo(sus) 45 V 60 100 Collector Cutoff Current (Veg= 30V,1,= 0 ) (Vog= S0V,I,= 0 ) BD241/42/41A/42A BD241B/42B/41C/42C lcEo mA Collector Cutoff Current (Vog 45V,Veg= 0 ) (Veg= S0V,V__= 0) (Veg= 8OV,V,5= 0 ) (V,,= 100V,V,,= 0) BD241/42 BD241A/42A BD241B/42B BD241C/42C lces mA Emitter Cutoff Current (Vep= 5V,I= 0) leBo ON CHARACTERISTICS (1) DC Current Gain (Veg = 4.0 V, I, =1.0 A) (Vcg = 4.0 V, Ie= 3.0 A) hFE 25 10 Collector-Emitter Saturation Voltage (I, = 3.0 A, I, =600 mA ) VoE;sat) 1.2 Base-Emitter On Voltage (I, =3.0 A, Veg= 4.0 V) Veeon) 1.8 DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Prodct (2) (I-=500 mA, Vog=10 V, f= 1 MHz) MHz 3.0 Small-Signal Current Gain (I,= 500 mA, V__= 10 V, f= 1 KHz ) hfe 20 (1) Pulse Test: Pulse width = 300ps , Duty Cycle = 2,0% (2) #, = [Pye] freeBD241,A,B,C NPN / BD242,A,B,C PNP t, TIME (us) her , DC CURRENT GAIN V VOLTAGE (VOLTS) 2. a 2 7 0. 0.03 0.03 0.05 0.05 DC CURRENT GAIN 0.1 02 03 0.5 1.0 ke , COLLECTOR CURRENT (AMP) TURN-OFF TIME ts tOBVcc230V O@Voc#10V 04 02 0.5 1 ig , COLLECTOR CURRENT (AMP) "ON" VOLTAGES Vee(eat) BloAg*10 0.05 Vee@ Voeteaty @ lofig*10 0.1 0.2 05 4.0 IC , COLLECTOR CURRENT (AMP) 20 3.0 2.0 3.0 t, TIME (us) Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (Amp) = = mh 0 1.0 0.03 COLLECTOR SATURATION REGION Tyx2C 2.0 50 10 20 50 100 = 200 ls, BASE CURRENT (mA) 500 1000 TURN-ON TIME t@Voc=30V t@Vocel0V 0.05 0.1 02 0.6 1 2.3 Ie , COLLECTOR CURRENT (AMP) ACTIVE REGION SAFE OPERATING AREA - Bording Wire Limit - Secord Breakdown Thermaly Limit E=25C(Single Puse) BO241,B0242 BD241B,BD242B BO241C,BD242C 10 20 50 100 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)