HAMOSPEC PNP SILICON POWER TRANSISTOR The 2N6594 is a gneral-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applica- tions. It is a complement to the NPN 2N6569 FEATURES: * Safe Operating Area- Full Power Rating to 40V * EPIBASE Performance in Gain and Speed * Lower Voltage, Economical Complement to the 2N3055 MAXIMUM RATINGS PNP 2N6594 12 AMPERE PNP SILICON POWER TRANSISTORS 40 VOLTS 100 WATTS Characteristic Symbol 2N6594 Unit Coliector-Emitter Voltage Voro 40 Vv Collector-Base Voltage Veo 45 Vv Collector-Base Voltage Vego 5.0 Vv Collector current - Continuous Io 12 A - Peak lo 24 Base current - Continuous ls 5.0 Emitter current - Continuous le 17 - Peak lem 34 Total Power Dissipation@T,=25C Py 100 Ww Derate above 25C 0.572 wc Operating and Storage Junction Ty Tst Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rdjc 1.75 CAN 400 = 90 FE 80 z 70 go & 50 & 40 2S 9 5 10 a 0 fo) 2 50 75 100 125 To , TEMPERATURE(C) FIGURE -1 POWER DERATING 150 175 200 1 | SN a |. pA PIN 1.BASE 2.EMITTER COLLECTOR(CASE) T DIM MILLIMETERS MIN MAX 38.75 | 30.96 Ao~-TODMOOWY wR 8 S D I2N6594 PNP a Ta a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Veeoisus) Vv (Ig = 100 mA, 1, = 0) 40 Collector Cutoff Current logo mA (Voeo = 40 V, Ip = 0) 1.0 Collector Cutoff Current lepo mA (Vopo = 45 V, 1, = 9) 1.0 Emitter Cutoff Current lepo mA (Veg =5.0V,1,=0) 5.0 ON CHARACTERISTICS(1) DC Current Gain hFE (1, =4.0A, Veg = 3.0V) 15 200 (lg =12A, Veg = 4.0V) 5.0 100 Collector-Emitter Saturation Voltage VeE;sat) V (1, = 4.0A, I, =0.4A) 1.5 (Ie = 12A, 1p =2.4A) 4.0 Base-Emitter Saturation Voltage Vpe(saty V (Il, =4.0A, I, =0.4A) 2.0 DYNAMIC CHARACTERISTICS Current -Gain-Bandwidth Product (2) f; MHz (1g = 1.0A, Veg = 4.0 V, f = 0.5 MHz ) 1.5 20 SWITCHING CHARACTERISTICS Delay Time Veg = 30 V ty 0.4 us Ig =2.0A - Rise Time lay =Igo = 0.2A t, 1.5 us t p= 25 us Storage Time Duty Cycle =2.0% t. 5.0 us Fall Time t, 1.5 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle S 2.0% (2)f,= [hy | of fe test2N6594 PNP DC CURRENT GAIN COLLECTOR SATURATION REGION T 2180 C Vegs4.0V ez 7 25C J = wi 4 9 5 s bi a 3 E = g % nr i e = Oo WwW a 6 0.1 02 03 0S O07 1.0 20 3.0 50 7.0 10 0 10 20 50 100 200 500 1k 2k Sk lc, COLLECTOR CURRENT (AMP) lb, BASE CURRENT (mA) "ON"VOLTAGES COLLECTOR CUT-OFF REGION Tya175C iv z g a 5 5 Zz 10" 3 a 2 5 a 6 = Vee set) @ Io/lg=10 5 lca a 5 ic ICES 2 4 10 Vee@ Voe=4.0V 3 REVERSE Voesat) @ lofp=10 ~ of 02 03 08 O07 10 20 30 50 70 10 4 403 402 401. 0 01 -02 03 04-05 -06 10 , COLLECTOR CURRENT (AMP) Vee, BASE-EMITTER VOLTAGE (VOLTS) ACTIVE-REGION SAFE OPERATING AREA (SOA) 30 a. . . Wy t~ Pe There are two limitation on the, power handling ability 20 N 1.0ms [~._| ~~ _ 0.5 ms of a transistor:average junction temperature and second z Lf | we SS. Sw breakdown safe operating area curves indicate [c-Vce 40 Re ~ SS limits of the transistor that must be observed for reliable Sos . operation i.e., the transistor must not be subjected to Fa 7.0 de 5 greater dissipation than curves indicate. a 5.0 ~ > The data of SOA curve is base on Typq=200 C:T is x x variable depending on conditions. second breakdown 8 3.0} gondng Wire Limit ' PS a pulse limits are valid for duty cycles to 10% provided a ~ Second Breakdown Limt TypryS200C At high case temperatures, thermal limita - 8 20 } ~Thermally Limited . . at T 226C (Sine Puse) tion will reduce the power that can be handled to values ~ less than the limitations imposed by second breakdown. gol_t | | itt | 40 50 7.0 10 20 30 40-60 70 80 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS)