NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient, Lead and Case.
3.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
C
J
@T
A
=
55 C
PR3001G thru PR3007G
FEATURES
Fast switching for high efficiency
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
PR
3003G
200
140
200
PR
3001G
50
35
50
PR
3007G
1000
700
1000
PR
3002G
100
70
100
PR
3006G
800
560
800
PR
3005G
600
420
600
PR
3004G
400
280
400
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 3.0A DC
3.0
125
1.3
Typical Thermal Resistance (Note 2)
30
10
10
C/W
Typical Junction
Capacitance (Note1)
50
pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 5.0
100
uA
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +150
Maximum Reverse Recovery Time (Note 3)
T
RR
150 250 500
ns
REVERSE VOLTAGE -
50
to
1000
Volts
FORWARD CURRENT -
3.0
Amperes
FAST RECOVERY
GLASS PASSIVATED RECTIFIERS
All Dimensions in millimeter
Max.
Min.
DO-201AD
Dim.
A
D
C
B
25.4
9.50
-
7.30
1.20
4.80 5.30
1.30
DO-201AD
A
C
D
A
B
SEMICONDUCTOR
LITE-ON
REV. 4, Oct-2010, KDEF01
R
0JA
R
0JL
R
0JC
C