NTE2517 (NPN) & NTE2518 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
DLow Saturation Voltage
DHigh Current Capacity and Wide ASO
Applications:
DVoltage Regulators
DRelay Drivers
DLamp Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, VCEO 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
TA = +25°C 1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 50V, IE = 0 – – 100 nA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 100 nA
DC Current Gain hFE VCE = 2V, IC = 100mA 140 – 400
VCE = 2V, IC = 2A 35 – –
Gain Bandwidth Product fTVCE = 10V, IC = 50mA – 140 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2517 Cob VCB = 10V, f = 1MHz –10 –pF
NTE2518 –25 –pF
Collector to Emitter Saturation Voltage
NTE2517 VCE(sat) IC = 1A, IB = 50mA –110 300 mV
NTE2518 –250 500 mV
Base to Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 50mA –0.85 1.2 V
Collector to Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V
Collector to Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞50 – – V
Emitter to Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6– – V
Turn–On Time ton IC = 10A, IB1 = 10A, –35 –ns
Storage Time
NTE2517 tstg
IB2 = 1A –550 –ns
NTE2518 –350 –ns
Fall Time tf–30 –ns
ECB
.315 (8.0) .130
(3.3)
.295
(7.5)
.433
(11.0)
.610
(15.5)
.118 (3.0)
Dia
.094 (2.4)
