
V
RRM
= 20 V - 40 V
I
F(AV)
= 160 A
Features
• High Surge Capability TO-249AB Package
• Types from 20 V to 40V V
RRM
• Isolated to Plate
• Not ESD Sensitive
Parameter Symbol FST16020 FST16030 Unit
Repetitive peak reverse voltage V
RRM
20 30 V
RMS reverse voltage V
RMS
14 21 V
Silicon Power
Schottk
Diode
Conditions
FST16020 thru FST16040
FST16040
35
25
FST16035
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
40
28
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol FST16020 FST16030 Unit
Average forward current (per
pkg) I
F(AV)
160 160 A
Maximum instantaneous
forward voltage (per leg) 0.75 0.75
11
10 10
30 30
Thermal characteristics
Thermal resistance, junction -
case (per leg) R
ΘJC
0.50 0.50 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 125 °C 160 160
Peak forward surge current (per
leg) I
FSM
t
p
= 8.3 ms, half sine 1000 1000 1000 1000 A
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
I
R
V
F
T
j
= 100 °C
30
T
j
= 25 °C
I
FM
= 80 A, T
j
= 25 °C
10 10
Conditions
-55 to 150 -55 to 150
FST16040
11
FST16035
0.50
T
j
= 150 °C
0.50
0.75 0.75
30
mA
V
-55 to 150 -55 to 150
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